Fatal respiratory obstruction due to round worm

Respiratory obstruction caused by a round worm is rate. A fatal case of the complication in a three-year-old child was encountered at the Nehru Hospital attached to the Postgraduate Institute of Medical Education and Research, Chandigarh, India.     

A novel approach to design optimal 2-D digital differentiator using vortex search optimization algorithm

Multimedia Tools and Applications - The designing of 2-D digital differentiator is multimodal and high dimensional problem which requires large number of differentiator coefficients to be...     

Irradiation of large area Mylar membrane and characterization of nuclear track filter

Ion irradiation of Si⁸⁺ ion beam of 100 MeV was scattered by a gold foil on a Mylar membrane of 25 Μm thickness in the form of film roll (width, 12.5 cm and length, 400 cm) at the Nuclear Science Centre, New Delhi. The characterization of etched nuclear tracks was carried out by gas permeation measurements. The samples cut from the film roll of required size for permeability measurements were etched in a controlled manner in a constant temperature bath of 6N NaOH solution. The opening of the conical etched tracks was characterized by hydrogen gas permeation.     

Effect of Nb doping on structural and electric properties of PZT (65/35) ceramic

The aim of this study is to determine the effect of Nb⁵⁺ doping on PZT (65/35) based bulk materials in their structure, micro structure and electrical properties. The Nb content was chosen 0-9 mole%. These materials were prepared by conventional mixed oxide method. X ray diffraction studies suggest the compound to be of rhombohedral perovskite phase. Excess addition of Nb result in pyrochlore and fluorite phase develops in PZT (65/35) sample. Detailed studies of dielectric constant as a function of temperature (40degC to 500degC) and frequency (100 Hz to 1 MHz) suggest that the compounds undergo diffuse type of phase transition. Maximum dielectric constant and resistivity were found to be strongly dependent on doping and measuring frequencies. Using complex impedance analysis micro structural parameters such as bulk and grain boundary resistance, bulk charge carrier concentration and relaxation time were determined     

Hybrid connection algorithm: A strategy for efficient restoration in WDM optical networks

In present communication, we propose a modified resource allocation strategy, namely, hybrid connection algorithm, for achieving efficient restoration in WDM optical networks. The main theme of the algorithm is that, while attempting connection establishment, a wavelength is reserved in advance for providing resources for backup lightpaths. The analysis and the comparison of the proposed strategy with other existing strategies has been undertaken using metrics such as, restoration efficiency, number of wavelength links used by primary and backup lightpaths, and the percent link utilization. The proposed strategy provides 100% restoration efficiency and much better performance than the existing techniques.     

New grounded and floating memristor emulators using OTA and CDBA

In this paper, grounded and floating decremental/incremental memristor emulators have been proposed by using an operational transconductance amplifier (OTA), current differencing buffered amplifier (CDBA), and a grounded capacitor. The proposed memristor emulators are simpler in design over most of the realizations of memristor emulators available in the literature. The proposed configurations of grounded and floating decremental memristor emulators can be easily converted into grounded and floating incremental memristor emulators. The pinched hysteresis loops obtained from proposed memristor emulators are maintained up to 1-MHz frequency in both decremental and incremental configurations. Simulation results have been obtained using a Mentor Graphics Eldo simulation tool in 0.18-μm complementary metal-oxide semiconductor (CMOS) technology parameters. Analog filters have also been designed to verify the performance of proposed grounded and floating memristor emulators.     

A systematic investigation of the integrated effects of gate underlapping,dual work functionality and hetero gate dielectric for improved performance of CP TFETs

This paper presents a comparative analysis of the combined effects of gate underlapping and dual work functionality with hetero gate dielectric engineering for a charge plasma tunnel field-effect transistor (CP TFET). Ultrathin nanoscale devices, despite their size and cost advantage, present serious issues, including doping control, random dopant fluctuation and fabrication complexity. Given these concerns, the concept of charge plasma is introduced to avoid the need for conventional doping for the formation of the source and drain regions, which makes the device resistive to process variation. Conduction for negative gate bias (ambipolarity), excess Miller capacitance (gate-to-drain capacitance) and poor RF performance in TFETs are addressed by the use of gate underlapping from the drain side. In addition, enhanced ON-state current is obtained by work function shifting (dual work functionality). This shift in work function can be accomplished by nitrogen doping of the gate electrode for experimental levels [1]. The combined effects of the underlap and dual work function are seen in the device having a single gate dielectric. However, the ON-state current remains lower in the case of \(\mathrm{SiO}_{2}\) as the gate dielectric. Therefore, a hetero gate dielectric \(\mathrm{SiO}_{2}\) on the drain side and \(\mathrm{HfO}_{2}\) on the source side are considered in order to improve the RF parameters and enhance the ON-current concept, respectively. Finally, the combined effects of gate underlap with work function shift and hetero dielectric are analyzed in CP TFETs. The results show that proper underlap length and gate work function provide a significant improvement in device performance. Therefore, optimization of the underlap length and work function is performed to determine the specific work function that provides overall enhancement of DC and analog/RF performance of the device. In addition, optimization of the dual work function gate length is demonstrated.     

Self-cleaning performance of sol–gel-derived TiO<Subscript>2</Subscript>/SiO<Subscript>2</Subscript> double-layer thin films

The self-cleaning properties of the TiO₂/SiO₂ double-layer films prepared by sol–gel method were investigated. Thin films were prepared by spin coating onto glass and then thermally treated at different temperatures, and characterized using X-ray diffraction, atomic force microscopy, field emission scanning electron microscopy, and UV–visible spectroscopy. The cross-sectional structure of the films was observed by FESEM. The surface roughness of the films was characterized by AFM. The root mean square surface roughness of the thin films was below 2 nm, which should enhance their optical transparency. The photo-induced hydrophilicity of the films was evaluated by water contact angle measurement in air. The photocatalytic activity of the films was studied by the photocatalytic degradation of methylene blue under UV light irradiations. The TiO₂/SiO₂ double-layer thin films are plausibly applicable to developing self-cleaning materials in various applications such as windows, solar panels, cement, and paints.