Modelling,design and stability analysis of an improved SEPIC converter for renewable energy systems

In this paper, a detailed modelling and analysis of a switched inductor (SI)-based improved single-ended primary inductor converter (SEPIC) has been presented. To increase the gain of conventional SEPIC converter, input and output side inductors are replaced with SI structures. Design and stability analysis for continuous conduction mode operation of the proposed SI-SEPIC converter has also been presented in this paper. State space averaging technique is used to model the converter and carry out the stability analysis. Performance and stability analysis of closed loop configuration is predicted by observing the open loop behaviour using Nyquist diagram and Nichols chart. System was found to stable and critically damped.     

Steady-state and transient forward current-voltage characteristicsof 4H-silicon carbide 5.5 kV diodes at high and superhigh currentdensities

Steady-state and transient forward current-voltage I-V characteristics have been measured in 5.5 kV p⁺-n-n⁺ 4H-SiC rectifier diodes up to a current density j≈5.5×10 ⁴ A/cm². The steady-state data are compared with calculations in the framework of a model, in which the emitter injection coefficient decreases with increasing current density. To compare correctly the experimental and theoretical results, the lifetime of minority carriers for high injection level, τ_ph, has been estimated from transient characteristics. At low injection level, the hole diffusion length L_pl has been measured by photoresponse technique. For a low-doped n-base, the hole diffusion lengths are L_pl≈2 μm and L_ph≈6-10 μm at low and high injection levels respectively. Hole lifetimes for low and high injection levels are τ_pl≈15 ns and τ_ph≈140-400 ns. The calculated and experimental results agree well within the wide range of current densities 10 A/cm ²3 A/cm². At j>5 kA/cm², the experimental values of residual voltage drop V is lower than the calculated ones. In the range of current densities 5×10³ A/cm²4 A/cm², the minimal value of differential resistance R_d =dV/dj is 1.5×10^-4 Ω cm². At j>25 kA/cm², R_d increases with increasing current density manifesting the contribution of other nonlinear mechanisms to the formation steady-state current-voltage characteristic. The possible role of Auger recombination is also discussed     

Outage Probability Analysis of Multi-relay Cooperative Decode-and-Forward System Over Generalized η–μ and κ–μ Fading Channels

In present scenario of wireless sensor networks and communications, efficient sensed data transmission among nodes is being a great confrontation because of the impulsive and volatile nature of sensors in the network. For providing that and enhancing network lifetime, there are several approaches are developed, specifically using clustering techniques. Still, there are requirements for energy based efficient routing in WSN. With that note, this paper develops anEnergy Aware Efficient Data Aggregation (EAEDAR) and Data Re-Schedulingwith the incorporation of clustering techniques. Moreover, the model used energy based cluster formation and cluster head selection for increasing the network stability and data delivery rate. The model comprises four main phases, namely, Energy factor based cluster formation, Aggregator_SN (Sensor Node) Selection, Efficient Data Aggregation (EDA) and Data Re-Scheduling based on delay and processing time. Furthermore, the model is updated with respect to the status of the nodes and links, for providing consistent network with improved reliable data transmissions. The simulation results portrays the effectiveness of the proposed model over other compared works in terms of the performance factors such as, throughput, packet delivery ratio, network lifetime, transmission delay and packet drop.

     

Performance Evaluation of RF Energy Harvesting Circuit with DRA and Planar Antennas

Wireless Personal Communications - In this paper, we have proposed a lightweight blockchain based model to provide distributed authentication and anonymous authorization in IoD. We have proposed...     

A multilevel hybrid anomaly detection scheme for industrial wireless sensor networks

Real-time sensing plays an important role in ensuring the reliability of industrial wireless sensor networks (IWSNs). Sensor nodes in IWSNs have inherent limitations that give rise to different anomalies in the network. These anomalies can lead to disastrous and harmful situations or even serious system failures. This article presents a formulation to the design of an anomaly detection scheme for detecting the anomalous node along with the type of anomaly. The proposed scheme is divided into two major parts. First, spatiotemporal correlation within a cluster is obtained for the normal and anomalous behavior of sensor nodes. Second, the multilevel hybrid classifier is used by combining the sequential minimal optimization support vector machine (SMO-SVM) as a binary classifier with optimally pruned extreme learning machine (OP-ELM) as a multiclass classifier for detection of an anomalous node and type of anomalies, respectively. Mahalanobis distance-based lightweight K-Medoid clustering is used to build a new set of training datasets that represents the original training dataset, by significantly reducing the training time of a multilevel hybrid classifier. Results are analyzed using standard WSN datasets. The proposed model shows high accuracy, i.e., 94.79% and detection rate, i.e., 94.6% with a reduced false positive rate as compared to existing hybrid methods.     

FGMOS transistor based low voltage and low power fully programmable Gaussian function generator

In this paper floating gate MOS (FGMOS) transistor based fully programmable Gaussian function generator (GFG) is presented. The circuit combines the exponential characteristics of MOS transistor in weak inversion, tunable property of FGMOS transistor, and its square law characteristic in strong inversion region to implement the GFG. FGMOS based squarer is the core sub circuit of GFG that helps to implement full Gaussian function for positive as well as negative half of the input voltage. FGMOS implementation of the circuit provides low voltage operation, low power consumption, reduces the circuit complexity and increases the tunability of the circuit. The performance of circuit is verified at 0.75 V in TSMC 0.18 μm CMOS, BSIM3 and level 49 technology by using Cadence Spectre simulator. To ensure robustness of the proposed GFG, simulation results for various process corner variations have also been included.     

Tensile Behavior of Single-Crystal Tin Whiskers

The growth of metallic (predominantly Sn) whiskers from pure metallic platings has been studied for over 50 years. While the phenomenon of Sn whiskering has been studied for decades, very little is known about the mechanical properties of these materials. This can be attributed to the difficulty in handling, gripping, and testing such fine-diameter and high-aspect-ratio whiskers. We report on the stress–strain behavior of Sn whiskers inside a dual-beam focused ion beam (FIB) with a scanning electron microscope (SEM). Lift-out of the whiskers was conducted in situ in the FIB, and the whiskers were tested using a microelectromechanical system tensile testing stage. Using this technique, the whiskers had minimum exposure to ambient air and were not handled by hand. SEM images after fracture enabled reliable calculation of the whisker cross-sectional area. Tests on two different whiskers revealed relatively high tensile strengths of 720 MPa and 880 MPa, respectively, and a limited strain to failure of ～2% to 3%. For both whiskers, the Young’s modulus was between 42 GPa and 45 GPa. It is interesting to note that the whiskers were quite strong and had limited ductility. These findings are intriguing and provide a basis for further work to understand the effect of Sn whisker mechanical properties on short circuits in electronics.     

Fast Ion Transport in Li-Rich Alloy Anode for High-Energy-Density All Solid-State Lithium Metal Batteries

All-solid-state Li batteries (ASSLBs) with solid-polymer electrolytes are considered promising battery systems to achieve improved safety and high energy density. However, Li dendrite formation at the Li anode under high charging current density/capacity has limited their development. To tackle the issue, Li-metal alloying has been proposed as an alternative strategy to suppress Li dendrite growth in ASSLBs. One drawback of alloying is the relatively lower operating cell voltages, which will inevitably lower energy density compared to cells with pure Li anode. Herein, a Li-rich Li₁₃In₃ alloy electrode (LiRLIA) is proposed, where the Li₁₃In₃ alloy scaffold guides Li nucleation and hinders Li dendrite formation. Meanwhile, the free Li can recover Li's potential and facilitate fast charge transfer kinetics to realize high-energy-density ASSLBs. Benefitting from the stronger adsorption energy and lower diffusion energy barrier of Li on a Li₁₃In₃ substrate, Li prefers to deposit in the 3D Li₁₃In₃ scaffold selectively. Therefore, the Li–Li symmetric cell constructed with LiRLIA can operate at a high current density/capacity of 5 mA cm⁻²/5 mAh cm⁻² for almost 1000 h.     

A theoretical study of the performance of sub-micron MOSFET devices in the presence of edge potential

In the present communication we have presented a detailed theoretical analysis of the performance of the sub-micron device in the presence of the discontinuity at the Si–SiO₂ interface. It is assumed that due to interface discontinuity a potential develops at the edges (Source/Drain) in addition to the built-in-potential. This potential, called Edge Potential, measures directly the extent of the interface roughness. The effect of this potential is more critical in the case of short channel device where drain and source are in close proximity. Our analysis shows that the discontinuity is dominant at the edges but not in the channel. Drive current as well as saturation transconductance decreases in the presence of edge potential. These results suggest that the performance of the device degrades due to the interface roughness. Effect of interface roughness near the edges can be reduced at high gate voltage but it will result more interface roughness scattering.