An accurate block-trimming device for ultramicrotomy of selected cells

A small instrument is described which is operated on the stage of a light microscope to trim resin-embedded specimens to precise levels for subsequent ultramicrotomy and to cut thin pilot sections for light microscopy. The operating procedure and examples of results are given.     

A real-time neural system for color constancy

A neural network approach to the problem of color constancy is presented. Various algorithms based on Land's retinex theory are discussed with respect to neurobiological parallels, computational efficiency, and suitability for VLSI implementation. The efficiency of one algorithm is improved by the application of resistive grids and is tested in computer simulations; the simulations make clear the strengths and weaknesses of the algorithm. A novel extension to the algorithm is developed to address its weaknesses. An electronic system that is based on the original algorithm and that operates at video rates was built using subthreshold analog CMOS VLSI resistive grids. The system displays color constancy abilities and qualitatively mimics aspects of human color perception.     

Performance engineering and topological design of metro WDM opticalnetworks using computer simulation

This paper demonstrates the use of computer simulation for topological design and performance engineering of transparent wavelength-division multiplexing metropolitan-area networks. Engineering of these networks involves the study of various transport-layer impairments such as amplifier noise, component ripple, chirp/dispersion, optical crosstalk, waveform distortion due to filter concatenation, fiber nonlinearities, and polarization effects. A computer simulation methodology composed of three main simulation steps is derived and implemented. This methodology obtains performance estimations by applying efficient wavelength-domain simulations on the entire network topology, followed by time-/frequency-domain simulations on selected paths of the network and finally Q-budgeting on an identified worst case path. The above technique provides an efficient tool for topological design and network performance engineering. Accurate simulation models are presented for each of the performance impairments, and the computer simulation methodology is used for the design and engineering of a number of actual metro network architectures     

Multicast routing and bandwidth dimensioning in overlay networks

Multicast services can be provided either as a basic network service or as an application-layer service. Higher level multicast implementations often provide more sophisticated features and can provide multicast services at places where no network layer support is available. Overlay multicast networks offer an intermediate option, potentially combining the flexibility and advanced features of application layer multicast with the greater efficiency of network layer multicast. In this paper, we introduce the multicast routing problem specific to the overlay network environment and the related capacity assignment problem for overlay network planning. Our main contributions are the design of several routing algorithms that optimize the end-to-end delay and the interface bandwidth usage at the multicast service nodes within the overlay network. The interface bandwidth is typically a key resource for an overlay network provider, and needs to be carefully managed in order to maximize the number of users that can be served. Through simulations, we evaluate the performance of these algorithms under various traffic conditions and on various network topologies. The results show that our approach is cost-effective and robust under traffic variations.     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

A concise process technology for 3-D suspended radio frequency micro-inductors on silicon substrate

In this letter, a concise process technology is proposed for the first time to enable the fabrication of good quality three-dimensional (3-D) suspended radio frequency (RF) micro-inductors on bulk silicon, without utilizing the lithography process on sidewall and trench-bottom patterning. Samples were fabricated to demonstrate the applicability of the proposed process technology.     

New insights in polarity-dependent oxide breakdown for ultrathin gate oxide

In this work, a quantitative analysis is applied to resolve the newly reported polarity-dependent charge-to-breakdown (Q/sub BD/) data from thick oxides of 6.8 nm down to ultrathin oxides of 1.9 nm. Three independent sets of Q/sub BD/ data, i.e., n/sup +/poly/NFET stressed under inversion and accumulation, and p/sup +/ poly/PFET under accumulation are carefully investigated. The Q/sub BD/ degradation observed for p-type anodes, either poly-Si or Si-substrate, can be nicely understood with the framework of maximum energy released by injected electrons. Thus, this work provides a universal and quantitative account for a variety of experimental observations in the time-to-breakdown (T/sub BD/) and Q/sub BD/ polarity-dependence of oxide breakdown.     

Mode coupling contribution to radiation losses in curvatures for high and low numerical aperture plastic optical fibers

We have studied the optical power losses due to multiple curvatures in polymethylmetacrylate (PMMA) plastic optical fibers (POFs) of different numerical apertures (NAs) and attenuation. The fibers were tested for several configurations in order to assess the influence of different types of curved-to-straight fiber transitions in the amount of power radiation. We found that losses are below the standards for all tested fiber types, and thus, they are a suitable choice for local area network (LAN) applications. In addition, our results revealed the presence of modal interactions as confirmed using an experimental procedure to estimate the mode coupling strength for the same fibers.