Hot-electron effects on AlGaAs/InGaAs/GaAs PHEMTs under accelerated DC stresses

The behavior of Schottky gate characteristics before and after hot-electron stress has been a relatively neglected topic. Thus, this paper discussed the effects of hot-electron accelerated stress on the DC characteristics of AlGaAs/InGaAs/GaAs PHEMTs as they relate to Schottky gate characteristics. It also presents studies of reverse Schottky gate characteristics before and after hot-electron stresses, as related to two major mechanisms: (1) the widening of the depletion region under the gate; and (2) the impact of the carriers trapped under the gate. The former induces a larger Schottky barrier height with a smaller reverse leakage current density than the latter, while the latter induces the opposite. Two hot-electron conditions are used to investigate the impact of the hot-electron stress on the gate leakage current. The gate leakage current decreases after a hot-electron stress, due the effect of hot-electron stress on the Schottky diode characteristics. Moreover, improvement in the noise performance is expected, due to the decrease in the gate leakage current. Both pre- and post-stress noise measurements have been done to demonstrate this.     

Fabrication of depletion-mode GaAs MOSFET with a selectiveoxidation process by using metal as the mask

The n-channel depletion-mode GaAs MOSFETs with a selective liquid phase chemical-enhanced oxidation method at low temperature by using metal as the mask (M-SLPCEO) are demonstrated. The proposed process can simplify one mask to fabricate GaAs MOSFET and grow reliable gate oxide films as well as side-wall passivation layers at the same time. The 1 μm gate-length MOSFET with a gate oxide thickness of 35 nm shows a transconductance of 90 mS/mm and a maximum drain current density larger than 350 mA/mm. In addition, a short-circuit current gain cutoff frequency f_T of 6.5 GHz and a maximum oscillation frequency f _max of 18.3 GHz have been achieved from the 1 μm×100 μm GaAs MOSFET     

Low-loss GaAs/GaAlAs strip-loaded waveguides with high coupling efficiency to single-mode fibres

We report measurements of low-loss MOVPE-grown GaAlAs/GaAs strip-loaded waveguides with high coupling efficiency to single-mode fibres. A propagation loss of 2 dB/cm and a coupling efficiency of 70% has been achieved for a p+-i-n+-structure waveguide. A propagation loss of 0.7 dB/cm and a coupling efficiency of 61% has also been achieved for an n?-i-n?-structure waveguide.     

Enhancement of the luminance efficiency for top-emitting DB-PPV polymer light-emitting diodes with Ca/Ag cathode

The enhancement of the luminance efficiency of the top-emitting 2,3-dibutoxy-1,4-polyphenylene vinylene (DB-PPV) polymer light-emitting diodes (PLEDs) with Ca/Ag cathode has been investigated in this work. The luminance efficiency of 2.9 cd A⁻¹ (at 10 mA) for the thickness of Ca/Ag cathode of 10/15 nm is achieved by our devices. In this paper, partially oxidized CaO_x film is proposed to have the capability of hole-blocking as well as the buffer layer on condition of the suitable Ag thickness of Ca/Ag cathode. The tuning ability of colors by simply adjusting the thickness of the DB-PPV emitting layer is available for the devices.     

Densification, crystallization, and electrical properties of lead zirconate titanate glass-ceramics

Piezoelectric glass-ceramics in the lead zirconate titanato-lead silicate system were developed. SiO(2) was required for glass formability, and excess PbO allowed low temperature processing. The amounts of those constituents were limited by the optimization of the piezoelectric properties. Only a small region of compositions in this system yielded the desired combination of glass formability, crystallization and densification behavior, and resulting piezoelectric properties. Selected compositions were melted and roller quenched to form glass ribbon, then milled into glass powder. Pressed glass powder densified to closed porosity at 850 degrees C with piezoelectric d(33 ) and g(33) coefficients of 26 pC/N and 33x10(-3 ) Vm/N. The low temperature sintering behavior of these ferroelectric glass-ceramics provides the possibility of incorporating a piezoelectric material as a sensor or actuator in thick film circuits or low-fire multilayer packages.     

Microwave InxGa1?xAsyP1?y/InP f.e.t

Microwave performance of InxGa1?xAsyP1?y quaternary alloy metal-semiconductor field effect transistors (m.e.s.f.e.t.s) is reported. Liquid-phase epitaxy (l.p.e.) using a step cooling technique has been employed to grow submicrometre quaternary layers having room-temperature bandgaps of 0.9, 1.0, 1.05, 1.15 and 1.2eV. F.E.T.s having gate dimensions of 1×200 ?m and a channel length of 5 ?m have been fabricated using 1.15 and 1.2 eV quaternary alloys. A maximum d.c. transconductance of about 10 mS and a maximum available gain of about 7 dB at 10 GHz have been obtained.     

Dual inhibitions of lemon balm (<Emphasis Type="Italic">Melissa officinalis</Emphasis>) ethanolic extract on melanogenesis in B16-F1 murine melanocytes: Inhibition of tyrosinase activity and its gene expression

The effects of wild type and UV-irradiated lemon balm (Melissa officinalis) ethanolic extracts (MOE and UMOE) on melanogenesis in vitro were examined. UMOE showed potent antioxidant activity and significantly inhibited the mushroom and melanocyte tyrosinase activity, and lowered cellular melanin content by 49% at 200 μg/mL in B16-F1 melanocytes. The key gene and protein expression of tyrosinase, tyrosinase-related protein (TRP)-1, and TRP-2 were reduced (−73% for TRP-1 protein at 200 μg/mL UMOE, p<0.05). MOE showed similar results to a slightly lesser degree. We found that myo-inositol, a major compound in lemon balm extracts, significantly reduced cellular melanin synthesis and its effect was greater than arbutin at 1 mM. These suggest that both MOE and UMOE have anti-melanogenic role by both direct inhibition of tyrosinase and down-regulation of gene expressions in melanogenesis. UV-irradiation slightly improved the anti-melanogenic activities. UMOE may be useful as natural anti-melanogenic biomaterials for functional foods and cosmetics.     

Real-time control of an immobilized-cell reactor for wastewater treatment using ORP.

The performance of an immobilized-cell reactor for simultaneous carbon nitrogen removal in synthetic wastewater with an intermittent aeration (IA) process under real-time control of oxygen supply was investigated. The oxidation-reduction potential (ORP) was monitored during operation. The ORP-time profile showed distinctive turning points. which directly correlated with the changes in the system chemistry and biological activity. The reactor was conducted by cyclic fixed-time aeration nonaeration operation at the beginning, followed by real-time control technology using ORP setpoint. A moving window along the slope of the ORP curve was employed to search for the nitrate breakpoint of the aeration cycle. Once the breakpoint was found, the reactor was aerated for a fixed period. The treatment process could effectively avoid the anoxic fermentation state under the real-time control. The cycle time was reduced around 30%. The duration of aeration period was found to be optimum at 3 h under the consideration of the removal efficiencies of COD and total nitrogen. The real-time control system not only exhibited a better nitrogen removal efficiency than the fixed-time control operation, but it also showed a stable effluent quality during the change of HRT from 3 to 8 h. Good operation stability was demonstrated even when a very high disturbance of the influent loading occurred.     

Urban Particle Capture in Bioretention Media. II: Theory and Model Development

As a novel stormwater best-management practice, using a soil/sand/mulch mixture to capture urban pollutants while promoting infiltration, the unique media composition renders bioretention significantly different from conventional sand filters. In this work, a three-layer model is presented to describe particulate capture in bioretention media employing parameter calibration and presensitivity analysis. Since the fine size of bioretention media strictly limits the particulate penetration distance, the media column is modeled as a pristine zone (bottom), a working zone (middle), and a cake zone (top). Mechanisms of both depth filtration and cake filtration are examined through mass balances, which show that both are significant. The developed resistance of each layer due to solid deposition was also estimated. Experimental data for different media/TSS-type combinations of selected experimental trials were used in parameter calibration. The calibrated model successfully predicted the effluent TSS and media hydraulic conductivity of subsequent trials with appropriate boundary and initial conditions as input. A weighted combination of calibrated parameters from different TSS types also agreed well with media behavior for treating a complex TSS mixture. The results of media replacement (top removal and refill) simulation also reasonably fit experimental data. Using proper assumptions, a long-term scenario analysis for permeability reduction was performed for a field bioretention facility. Based on modeling results, this study recommends a shallow bioretention media depth design, an annual or biannual field inspection schedule, and periodic media replacement maintenance.     

Effect of discharge power density on the properties of Al and F co-doped ZnO thin films prepared at room temperature

ZnO transparent conducting thin films co-doped with aluminium and fluorine (AZO:F) were prepared on glass substrates by RF magnetron sputtering at room temperature. The effect of discharge power density on the microstructure, surface morphology, electrical and optical properties was investigated. From XRD analysis, it was revealed that the intensity of (002) favoured orientation of ZnO films increased with power density from 2.6 to 6.1?W/cm² and then turned to a randomly orientated structure as power density continuously increased to 7.8?W/cm². The film prepared at 6.1?W/cm² showed a better crystallization and microstructure with larger, pyramid-like grains that were approximately 180?nm long and 90?nm wide. As a result, the electrical resistivity of the AZO:F films had a minimum of 4.1?×?10^?4???cm. The improvement in the electrical resistivity of AZO:F films was due to the increase in carrier concentration from 8.8?×?10²⁰ to 1.38?×?10²¹?cm^?3 and the mobility from 5.8 to 11.8?cm² V^?1 s^?1. The increase in carrier concentration with power density was also found to affect the optical property of the films due to the Moss-Burstein shift.