Effect of pretreatments and freezing rate on the firmness of potato tissue after a freeze–thaw cycle

The texture of potato tissue after a freeze–thaw process using different freezing rates and different pretreatments was analysed, in order to select the best strategy for optimum preservation of the textural characteristics of pre‐frozen potato. Ten blanching conditions were tested and a two‐step blanching process with calcium chloride (0.07 g mL^?1) proved the most effective in protecting the tissue after a freeze–thaw process (maximum load force around 10–55% of the raw tissue, depending on potato batch, for air‐blast freezing and 20–60% for immersion freezing). Vacuum impregnation at 100 and 400 mbar, even when followed by different pre‐drying treatments to remove excess water, was very detrimental to resistance to a freeze–thaw process (maximum load force below 10% of the raw tissue for air‐blast freezing and below 20% for immersion freezing). Microstructure analysis confirmed better tissue integrity retention with ethyleneglycol immersion freezing instead of air‐freezing. Differences were found between batches with a 6‐month difference in storage time, indicating that the fresher batch was more suitable for freezing.     

涤纶超细仿麂皮织物染整实践

介绍了涤纶超细仿麂皮织物的染整加工工艺，重点分析了前处理、染色等关键工序，并给出了具体工艺参数。     

污垢对冷水机组的影响

通过对两个工程实例的冷水机组测试结果对比分析，得出污垢对冷水机组造成了热阻增加，接热效果变差，制冷量减少以及制冷效率下降等严重后果，并推算出机组由此所带来的运行费用的增加。运行管理人员应该注意对机组加强清洗保养工作，以提高机组的经济运行水平。     

Empirical efficiency and volume relationships for HPGe detectors

We have extended the empirical work of Vano et al.[1] relating the slope of the detector efficiency curve to the active volume for Ge detectors. The analysis was carried out using Monte Carlo techniques and covered a wide range of incident energies (200 keV-20 MeV) and active volumes (19.6 cm³–396 cm³). It is shown that the expression of Vano et al.[1] is only valid over the energy range 200 keV-3 MeV for active volumes <50 cm³. The upper bound decreases to 2 MeV for volumes of a few hundred cm³. The usable energy range can, however, be extended to 6 MeV by introducing higher order terms into the polynomial. Above this energy, the shape of the efficiency curve is better described by a non-linear function since linear forms fail simultaneously to fit large active volumes and high energies. We therefore propose a composite function which reduces to the form given in Vano et al. in the low energy/active volume limit. By comparison with the Monte Carlo results, it is estimated that relative efficiencies can be calculated to within 6% over the energy range 200 keV-20 MeV and active volumes 20 cm³–400 cm³. Since the largest errors occur for the smallest volumes, we recommend that for energies <3 MeV a two-fold approach be followed, i.e. using the expression of Vano et al.[1] for active volumes less than 50 cm³ and the proposed non-linear form for larger volumes. For high energy work (E > 3 MeV), we advocate the non-linear form. In this way, average errors can be kept 3%. Finally, we point out that the real power of the expression of Vano et al. lies not in predicting efficiencies, but active volumes.     

Surface losses in transmission lines

Two derivations of the loss parameter R, entirely from wave considerations in the presence of a metallic interface, are presented. R, which represents surface losses, occurs in transmission line equations for propagation of the voltage across the plates and of the current in the plates. Explanation of the surface losses involves some radiation of the interior fields into the metallic surfaces that absorb electromagnetic energy, and that ultimately convert it into ohmic losses (heat). Although the approach may restrict the derivation to a planar interface, i.e., to a parallel-plate transmission line, that restriction is not so essential that it cannot be softened     

Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge

Surface recombination velocities as low as 10 cm/s have been obtained by treated atomic layer deposition (ALD) of Al₂O₃ layers on p-type CZ silicon wafers. Low surface recombination is achieved by means of field induced surface passivation due to a high density of negative charges stored at the interface. In comparison to a diffused back surface field, an external field source allows for higher band bending, that is, a better performance. While this process yields state of the art results, it is not suited for large-scale production. Preliminary results on an industrially viable, alternative process based on a pseudo-binary system containing Al₂O₃ are presented, too. With this process, surface recombination velocities of 500–1000 cm/s have been attained on mc-Si wafers.     

Internal drift effects on the diffusion of Ag in CdTe

Anomalous diffusion profiles of Ag in single crystalline CdTe were observed using the radiotracer ¹¹¹Ag. The diffusion anneals were performed at 800 K under Cd or Te vapor and in vacuum with low Ag concentrations. The measured Ag profiles directly reflect the distribution of the self-interstitials and vacancies of the Cd sublattice and are the result of chemical self-diffusion which describes the variation of the deviation from stoichiometry of the binary crystal as a function of depth and time. It turned out that the spread of the Ag dopant essentially is determined by the drift of the charged defects within the electric field caused by the distribution of the extrinsic and intrinsic defects.     

职业道德建设的调查与思考

近年来各行各业加强职业道德建设,取得了一定成绩,涌现了一大批敬业爱岗、服务社会的岗位明星,但也存在着这样或那样的认识误区或现实局限,如形式主义、短期行为和领导观念异位等,这极大地阻碍了职业道德建设的深入推进。职业道德建设就其特征而言,它具有长期性、时代性和阶级性、相对稳定性以及创新性等属性,对此需要有一个理智而清晰的认识。应从营造良好的社会氛围、制定切实可行的道德准则、进行规范化的教育引导和发挥先进人物的示范作用等几方面入手,把职业道德建设推向深入。