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51.
Starting from a microscopic Hamiltonian defined on a semi-infinite cubic lattice, and employing a mean-field approximation, the surface parameters relevant for wetting in confined ternary mixtures are derived. These are found in terms of the microscopic coupling constants, and yield a physical interpretation of their origins. In comparison with the standard expression for the surface free-energy density, several new terms arising from the derivation are identified. The influence of the surface parameters on a predicted unbinding transition in a mixture of oil, water, and amphiphile demonstrate that existing results are robust to the addition of the extra surface terms. 相似文献
52.
Lorenzetto G. Galtarossa A. Palmieri L. Santagiustina M. Someda C.G. Fiorone R. 《Lightwave Technology, Journal of》2003,21(2):424-431
First-order polarization-mode dispersion (PMD) compensation by means of a polarization controller and a differential delay line is not sufficient to guarantee error-free transmission for 40-Gb/s channels when higher order effects severely increase signal distortion. Higher order mitigation is possible by cascading more than one first-order block. However, only two-stage or three-stage devices remain simple enough to be actually controlled. The performance of such higher order PMD compensators is evaluated by means of numerical simulations. Two different feedback signals have been used, demonstrating that first-order and higher order PMD distortion of nonreturn-to-zero (NRZ) pulses at 40 Gb/s can be strongly mitigated for instantaneous values of the differential group delay (DGD) up to the bit slot, when the compensator is properly controlled. 相似文献
53.
Thomas S. Lowry John C. Bright Murray E. Close Christina A. Robb Paul A. White Stewart G. Cameron 《国际水资源开发杂志》2003,19(4):579-592
The primary objective of this project is to identify gaps, whether real or perceived, that hinder effective groundwater management in New Zealand. These gaps show as gaps in information, gaps in implementation, gaps in technological and management tools, and gaps in understanding of fundamental processes. The secondary objective is to propose a management strategy to close the identified gaps. Several methods are used to meet these objectives: surveys distributed to selected staff in each regional council; the review of various written reports; the analysis of land-use databases; and private consultation within each regional council. Results show that groundwater management in New Zealand is generally reactionary with the main gaps being in strategic planning and national guidelines. Most gaps appear to be predominantly information and implementation issues. In some cases there are gaps in the understanding of fundamental processes within an aquifer system, including the long-term effects of land-use on groundwater quality. An adaptive management approach is suggested as a means of closing these gaps. 相似文献
54.
On the capacities of bipartite Hamiltonians and unitary gates 总被引:2,自引:0,他引:2
Bennett C.H. Harrow A.W. Leung D.W. Smolin J.A. 《IEEE transactions on information theory / Professional Technical Group on Information Theory》2003,49(8):1895-1911
We consider interactions as bidirectional channels. We investigate the capacities for interaction Hamiltonians and nonlocal unitary gates to generate entanglement and transmit classical information. We give analytic expressions for the entanglement generating capacity and entanglement-assisted one-way classical communication capacity of interactions, and show that these quantities are additive, so that the asymptotic capacities equal the corresponding 1-shot capacities. We give general bounds on other capacities, discuss some examples, and conclude with some open questions. 相似文献
55.
D. Vignolles D. Smirnov G. Rikken B. Raquet H. Rakoto C. Proust M. Nardone J. Léotin F. Lecouturier M. Goiran O. Drachenko J. M. Broto L. Brossard A. Audouard 《Journal of Low Temperature Physics》2003,133(1-2):97-120
An overview over past and present activities and future developments at the Toulouse pulsed magnetic field facility is given, both as far as technical developments of the infrastructure, as well as low temperature physics performed at the LNCMP are concerned. 相似文献
56.
57.
The selector activated sludge (SAS) systems are known to prevent excessive growth of filamentous microorganisms responsible for bulking sludge, but these systems were hardly ever modelled. This study aimed to develop a model capable of predicting rapid substrate removal in the SAS systems. For this purpose, the Activated Sludge Model No. 3 (ASM3) was extended with three processes (adsorption, direct growth on the adsorbed substrate under aerobic or anoxic conditions). The modified ASM3 was tested against the results of batch experiments with the biomass originating from two full-scale SAS systems in Germany. The endogenous biomass was mixed with various readily biodegradable substrates (acetate, peptone, glucose and wastewater) and the utilisation of substrate (expresses as COD) and oxygen uptake rates (OURs) were measured during the experiments. In general, model predictions fitted to the experimental data, but a considerable number of kinetic (5) and stoichiometric (2) parameters needed to be adjusted during model calibration. The simulation results revealed that storage was generally a dominating process compared to direct growth in terms of the adsorbed substrate utilisation. The contribution of storage ranged from 65-71% (Plant A) and 69-92% (Plant B). 相似文献
58.
59.
60.
Yang C.W. Fang Y.K. Lin C.S. Tsair Y.S. Chen S.M. Wang W.D. Wang M.F. Cheng J.Y. Chen C.H. Yao L.G. Chen S.C. Liang M.S. 《Electronics letters》2003,39(21):1499-1501
A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V. 相似文献