N-polar GaN基HEMT准二维电荷传输模型仿真

建立了氮极性(N-polar)GaN基HEMT器件的准二维(Quasi-2-D)电荷传输模型,仿真研究了N-polar GaN基HEMT的直流特性。仿真结果表明,不同的极化效应会对输出特性曲线和转移特性曲线产生不同的影响,考虑自发极化效应(Psp)+压电极化效应(Ppe)、只考虑Ppe和只考虑Psp三种情况下的阈值电压分别为:-3.96V、-2.29V和-2.47V,而其对应的峰值跨导则分别为44mS/mm、41.2mS/mm和41.3mS/mm。该模型为N-polar GaN基HEMT器件仿真提供了理论参考。     

高效能空气净化器评价技术要求国家标准研究

本文论述了编制高效能空气净化器产品评价技术要求国家标准的意义和作用,介绍了标准研制的总体思路和原则,高效能空气净化器的定性和定量评价指标要求,测试、计算和评价方法等,通过国标的研制与实施,将引领并促进高效能空气净化器产品的生产与应用.     

发动机进气系统高通量富氧膜的研制

采用交联改性的方法对较低分子量的乙烯基硅橡胶进行了改性研究,制备了高通量的富氧膜,结合单因素实验法和Design-expert正交实验设计,考察了原料配比、交联反应时间、固化温度和固化时间等因素对富氧膜性能的影响,确定了最佳富氧性能膜的制备条件:原料配比4.3,反应时间2.15h,固化温度86.25℃,固化时间1.75h;获得了富氧浓度为28.68%,透气量为4696.33 barrer的富氧膜,该膜的富氧浓度与常规商品化膜相当,透气量为常规商品化膜的2~4倍,有应用于发动机富氧进气系统的前景。通过扫描电镜检测、机械性能检测等手段对复合膜进行了进一步表征。     

气相色谱仪新旧检定规程的解读

本文主要从规程适用范围、计量器具控制、计量性能要求及检定方法等方面入手,全面的解读了气相色谱仪新旧检定规程的差异,为仪器检定及期间核查提供了参考。     

高熵合金氮化物薄膜的研究进展

基于多元高熵合金思想制备的高熵合金氮化物薄膜由于多种元素相互混合,易于产生高熵效应、晶格畸变效应和缓慢扩散效应,使得该新型薄膜体系形成简单的非晶结构和纳米晶结构。依赖于成分和制备工艺,多元高熵合金氮化物薄膜表现出简单的固溶体结构和优异的性能,因而在许多领域极具应用潜力。综述了高熵合金氮化物薄膜的发展概况、组织特点、性能特征、制备方法和应用前景,并对高熵合金氮化物薄膜的发展方向进行了展望。     

合成介质对PEDOT催化染料敏化太阳电池光阴极性能的影响

采用聚3,4-乙烯二氧噻吩(PEDOT)/FTO为对电极,研究了合成介质对循环伏安法电聚合制备的PEDOT/FTO对电极性能的影响。通过SEM、CV、EIS、Tafel曲线,并首次采用SECM方法对所制备的对电极的电催化性能进行了表征。结果表明:在LiClO4水溶液和1-丁基-3-甲基四氟硼酸盐离子液体(IL)中制备的光阴极具有良好的电催化性能。J-V测试曲线表明,在LiClO4水溶液和IL中制备的光阴极所组装的DSSC器件的光电转化效率分别达6.4%和6.6%,接近于同等条件下以Pt对电极构建的DSSC器件的光电转化效率。     

ITER极向场线圈销轴表面硬化工艺研发

ITER极向场线圈(PF)磁体支撑销轴承载极向场线圈和部分真空室的质量,因使用环境非常恶劣,所以对其表面硬度及耐磨性能有很高的需求。按照ITER极向场线圈销轴的设计要求,研发了两种表面硬化处理方式,包括无界面N离子注入361LN强化处理以及采用在不锈钢表面堆焊一层马氏体不锈钢ER414L的方式分别不同程度地增加基底材料的表面硬度以及耐磨性能,可以满足小尺寸及超大型部件的表面硬化设计需求。     

A Two‐Stage Annealing Strategy for Crystallization Control of CH3NH3PbI3 Films toward Highly Reproducible Perovskite Solar Cells

The solvent‐engineering method is widely used to fabricate top‐performing perovskite solar cells, which, however, usually exhibit inferior reproducibility. Herein, a two‐stage annealing (TSA) strategy is demonstrated for processing of perovskite films, namely, annealing the intermediate phase at 60 °C for the first stage then at 100 °C for the second stage. Compared to conventional direct annealing temperature (DHA) at 100 °C, using this strategy, MAPbI₃ films become more controllable, leading to superior film uniformity and device reproducibility with the champion device efficiency reaching 19.8%. More specifically, the coefficient of variation of efficiency for 49 cells is reduced to 5.9%, compared to 9.8% for that using DHA. The TSA process is carefully studied using Fourier transform infrared spectroscopy, X‐ray diffraction, and UV–vis absorption spectroscopy. It is found that in comparison with DHA the formation of hydrogen bonding and crystallization of perovskite are much slower and can be better controlled when using TSA. The improvements in film uniformity and device reproducibility are attributed to: 1) controllable MAPbI₃ crystal growth stemming from the progressive formation of hydrogen bonding between methylammonium and halide; 2) suppression of intermediate phase film dewetting, which is believed to be due to its decreased mobility at the initial low‐temperature annealing stage.