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31.
Chun-Tsen Lu Kun-Wei Lin Huey-Ing Chen Hung-Ming Chuang Chun-Yuan Chen Wen-Chau Liu 《Electron Device Letters, IEEE》2003,24(6):390-392
A new and interesting Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H/sub 2//air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95/spl deg/C, both the forward and reverse currents are substantially increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H/sub 2//air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated. 相似文献
32.
The hydrogenated poly-silicon germanium (poly-SiGe:H) epitaxial film has been investigated using gold-induced lateral crystallization (Au-ILC) technology on a-SiGe:H layers at 10-h 350/spl deg/C annealing temperature and 60-sccm hydrogen (H/sub 2/) content. Using this optimal condition, the growth rate of the induced Au was as large as 15.9 /spl mu/m/h. With a low annealing temperature (/spl les/400/spl deg/C) and large growth rate, this novel technology will be noticeably useful for poly-SiGe:H pin IR-sensing fabrication on a conventional precoated indium tin oxide (ITO)-glass substrate. Under a 1-/spl mu/W IR-LED incident light (with peak wave length at 710 nm) and at a 5-V biased voltage, the poly-SiGe:H pin IR sensor developed by the Au-ILC technology, i.e., an Al (anode)/n poly-SiGe:H/i poly-SiGe:H/p poly-SiGe:H/ITO (cathode)/glass-substrate structure allowed for maximum optical gain and response speed. The optical gains and the response speeds were almost 600 and 130%, respectively, better than that of a traditional pin type. Meanwhile, the FWHM of a poly-SiGe:H pin sensor with Au-ILC technology was reduced from 280 to 150 nm. This reveals excellent IR-sensing selectivity. These IR-sensing trials demonstrated again that the proposed Au-ILC technology has very useful application in the field of low cost integrated circuits on optoelectronic applications. 相似文献
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针对电信运营商在构建内部数据通信网(DCN)时遇到的各应用系统的隔离问题,详细介绍了目前几种主流的虚拟专用网(VPN)技术,并进行分析比较,最后提出了运营商内部数据通信网的VPN解决方案。 相似文献
37.
Chih-Ming Chen Hahn-Ming Lee Chia-Chen Tan 《Engineering Applications of Artificial Intelligence》2006,19(8):967-978
The explosion of on-line information has given rise to many manually constructed topic hierarchies (such as Yahoo!!). But with the current growth rate in the amount of information, manual classification in topic hierarchies results in an immense information bottleneck. Therefore, developing an automatic classifier is an urgent need. However, classifiers suffer from enormous dimensionality, since the dimensionality is determined by the number of distinct keywords in a document corpus. More seriously, most classifiers are either working slowly or they are constructed subjectively without any learning ability. In this paper, we address these problems with a fair feature-subset selection (FFSS) algorithm and an adaptive fuzzy learning network (AFLN) for classification. The FFSS algorithm is used to reduce the enormous dimensionality. It not only gives fair treatment to each category but also has ability to identify useful features, including both positive and negative features. On the other hand, the AFLN provides extremely fast learning ability to model the uncertain behavior for classification so as to correct the fuzzy matrix automatically. Experimental results show that both FFSS algorithm and the AFLN lead to a significant improvement in document classification, compared to alternative approaches. 相似文献
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Chun-Yuan Chen Shiou-Ying Cheng Wen-Hui Chiou Hung-Ming Chuang Wen-Chau Liu 《Electron Device Letters, IEEE》2003,24(3):126-128
A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even if the device is operated at an ultralow collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/A/cm/sup 2/). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications. 相似文献
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