Using Sorted Switching Median Filter to remove high-density impulse noises

We propose a novel Sorted Switching Median Filter (i.e. SSMF) for effectively denoising extremely corrupted images while preserving the image details. The center pixel is considered as “uncorrupted” or “corrupted” noise in the detecting stage. The corrupted pixels that possess more noise-free surroundings will have higher processing priority in the SSMF sorting and filtering stages to rescue the heavily noisy neighbors. Five noise models are considered to assess the performance of the proposed SSMF algorithm. Several extensive simulation results conducted on both grayscale and color images with a wide range (from 10% to 90%) of noise corruption clearly show that the proposed SSMF substantially outperforms all other existing median-based filters.     

InGaP/InGaAs Pseudomorphic Heterodoped-Channel FETs With a Field Plate and a Reduced Gate Length by Splitting Gate Metal

Depositing gate metal across a step undercut between the Schottky barrier layer and the insulator-like layer is employed to obtain a reduced gate length of 0.4 mum with an additional 0.6-mum field plate from a 1-mum gate window. Most dc and ac characteristics including current density (I_DSS=451mA/mm), transconductance (g_m,max=225mS/mm), breakdown voltages (V_BD(DS)/V _BD(GD)=22/-25.5V), gate-voltage swing (GVS=2.24V), cutoff, and maximum oscillation frequencies (f_t/f_max=17.2/32GHz) are improved as compared to those of a 1-mum gate device without field plate. At a V_DS of 4.0 V, a maximum power added efficiency of 36% with an output power of 13.9 dBm and a power gain of 8.7 dB are obtained at a frequency of 1.8 GHz. The saturated output power and the linear power gain are 316 mW/mm and 13 dB, respectively     

Design of low power UWB LNA based on common source topology with current-reused technique

This paper presents two low power UWB LNAs with common source topology. The power reduction is achieved by the current-reused technique. The gain and noise enhancement of the proposed circuit is based on an output buffer which is used by a common source amplifier with shunt–shunt feedback. Chip1 is an adopted T-match input network of 50 Ω matching in the required band. Measurements show that the S₁₁ and S₂₂ are less than −10 dB, and the maximum amplifier gain S₂₁ gives 9.7 dB, and the noise figure is 4.2 dB, the IIP3 is −8.5 dBm, and the power consumption is 11 mW from 1.1 V supply voltage. The input matching of chip2 is adopted from a LC high pass filter and source degenerated inductor. The output buffer with the RC-feedback topology can improve the gain, increase the IIP3, restrain the noise, improve the noise figure and decrease the DC power dissipation. Measurements show 13.2 dB of power gain, 3.33 dB of noise figure, and the IIP3 is −3.3 dBm. It consumes 9.3 mW from 1.5 V supply voltage. These two chips are implemented in a 0.18 μm TSMC CMOS process.     

Soldering of solution-processed organic vertical transistor and light-emitting diode on separate glass substrates by tin micro-balls

The vertical organic space-charge-limited transistor made of P3HT and small-molecule phosphorescent organic light-emitting diode (OLED) are made on two separate glass substrate by blade coating, then soldered vertically together by tin balls with 40 μm diameter. The soldering is done by hot wind of 150 °C for 5 min Contact resistance is only 10 Ω. The vertical transistor is annealed at 150 °C for 5 min before soldering to enhance the output current up to 25 mA/cm² and give high thermal stability. Both OLED and the annealed vertical transistor are not affected by the soldering process. The vertical transistor has 1/4 of the OLED area and turns on the bottom-emission white OLED up to 300 cd/m² and orange OLED up to 600 cd/m². The entire operation is within 8 V. OLED and transistor array can therefore be made on separate glass substrates then soldered together to form the display.     

Enhanced resonant tunneling real-space transfer in δ-dopedGaAs/InGaAs gated dual-channel transistors grown by MOCVD

We report the observation of pronounced N-shaped negative differential resistance (NDR) and negative transconductance at high drain and gate fields in δ-doped GaAs/InGaAs gated dual-channel transistors (DCTs) by tunneling real-space transfer (TRST). By virtue of varying the sheet density of the δ-doping layer as well as the thickness of the GaAs barrier, pronounced multiple-state NDR characteristics were obtained accompanying the gate current characteristic at room temperature. A peak-to-valley current ratio (PVR) of 15 was obtained which, to our knowledge, is the highest among the reported TRST devices at room temperature. The proposed devices possess potential advantages of ease of growth and fabrication     

Diurnal thermal cycling effects on microwave signatures of thin seaice

To investigate effects of diurnal thermal cycles on C-band polarimetric backscatter and millimeter-wave emission from sea ice, the authors carried out a winter experiment at the outdoor geophysical research facility (GRF) in the cold regions research and engineering laboratory (CRREL), the ice sheet grew from open sea water to a thickness of 10 cm in 2.5 days, during which they took polarimetric backscatter data with a C-band scatterometer, interlaced with brightness temperature measurements at 90 GHz in conjunction with meteorological and sea ice characterizations. The initial ice growth in the late morning was slow due to high insolation. As the air temperature dropped during the night, the growth rate increased significantly. Air temperature changed drastically from about -12 to -36°C between day and night, the diurnal thermal cycle repeated itself the next day and the growth rate varied in the same manner. Ice temperature profiles clearly show the diurnal response in the ice sheet with a lag of 2.5 h behind the time of the maximum short-wave incident solar radiation. The diurnal cycles are also evident in the millimeter-wave brightness temperature data, measured sea ice backscatter revealed substantial diurnal variations up to 6 dB with repeatable cycles in synchronization with the temperature cycles and the brightness temperature modulations, the diurnal cycles in backscatter indicate that the dominant scattering mechanism related to thermodynamic processes in sea ice is reversible, a diurnal backscatter model based on sea ice electrodynamics and thermodynamics explains the observed diurnal signature. This work shows that diurnal effects are important for inversion algorithms to retrieve sea ice geophysical parameters from remote sensing data acquired with a satellite synthetic aperture radar (SAR) or scatterometer on Sun-synchronous orbits     

Behavioral modeling of the IGBT using the Hammerstein configuration

The Hammerstein model configuration, which includes a nonlinear static block followed by a linear dynamic block, is applied to model the static and dynamic characteristics of the insulated gate bipolar transistor (IGBT). Using least-squares methods, the parameters in the behavioral model can be extracted from the electrical measurements of physical devices or from the circuit simulations of physics-based models. A single set of extracted parameters has been found to yield satisfactory efficiency and accuracy for the tested hard- and soft-switched converters under prescribed ranges of operating conditions     

Investigation of Ag-bulk/glassy-phase/Si heterostructures of printed Ag contacts on crystalline Si solar cells

The interface structure of screen-printed silver contacts on a crystalline silicon solar cell has been studied by transmission electron microscopy (TEM). TEM results confirmed that the glassy-phase plays an important role in contact properties. There are at least three different microstructures present in optimal fired contacts. The location where silver-bulk directly contacts silicon is observed through SEM, and this is actually a very thin glass layer in between. In addition, high-density silver embryos on silicon were found for samples fired optimally. The results presented in this study suggest that Ag-bulk/thin-glass-layer/Si contact is the most decisive path for current transportation.     

Effect of adding Sb on microstructure and adhesive strength of Sn-Ag solder joints

This study investigates the influence of adding Sb on the microstructure and adhesive strength of the Sn3.5Ag solder. Both solidus and liquidus temperatures increase as Sb additions increase. Adding 1.5wt.%Sb leads to the narrowest range (6.6°C) between the solidus and liquidus temperature of the solder. Adding Sb decomposes the as-soldered ringlike microstructure of Sn3.5Ag and causes solid-solution hardening. The as-soldered hardness increases with increasing Sb addition. For long-term storage, adding Sb reduces the size of the rodlike Ag₃Sn compounds. The hardness also increases with increasing Sb addition. Adding Sb depresses the growth rate of interfacial intermetallic compounds (IMCs) layers, but the difference between 1% and 2% Sb is not distinct. For mechanical concern, adding Sb improves both adhesive strength and thermal resistance of Sn3.5Ag, where 1.5% Sb has the best result. However, adding Sb causes a variation in adhesive strength during thermal storage. The more Sb is added, the higher the variation reveals, and the shorter the storage time requires. This strength variation helps the solder joints to resist thermal storage.     

A novel online wavelength assignment algorithm in wavelength-convertible multi-granular optical networks

As industrial technology gets more mature, a single fiber can offer more and more wavelengths. However, it also results in a large amount of switching ports at optical cross-connects (OXCs). Certainly, it is expected that higher and higher complexity is inevitable to control and manage such large OXCs. In this paper, we study the dynamic wavelength assignment problem in waveband switching (WBS) networks composed of multi-granular OXCs (MG-OXCs). Moreover, in order to relax the wavelength continuity constraint on lightpath establishments, each MG-OXC node is equipped with a certain number of converters. To efficiently minimize the extra port consumption and utilize wavelength converters, we proposed an online wavelength assignment algorithm named Least Weighted Configuration Cost (LWCC). For a new request, LWCC first adopts fixed routing and then exploits the layered-graph approach and a new cost function for edge weight assignment to determine adequate wavelength(s). The performance metrics of interest include both blocking performance and converter utilization. Numerical results show that LWCC is superior in waveband grouping and therefore results in significant performance gain in terms of blocking probability.