220GHz同轴谐振腔回旋管研究

同轴谐振腔相比波导谐振腔具有更大的功率容积,通过调整内外径的尺寸还可降低模式竞争。本文介绍了电子科技大学目前220 GHz同轴谐振腔回旋管的设计与研制工作,给出了谐振腔、电子光学系统与输出结构的设计参数与仿真结果,仿真结果表明该设计可获得100 kW以上的输出功率与20%以上的互作用效率。     

新型处理药剂（EP-110）处理各种重金属离子的实验研究

各行各业生产过程中会产生大量废水,重金属离子污染物是其中的重要控制指标,传统的处理方法不能完全解 决这类污染。本文通过大量的实验数据,对新型的处理药剂(EP-110)处理各种重金属离子的性能做了全面的测试、分析,并 提出了使用方法。     

长春邮件处理中心工艺设备安装工程监理实践

通过对长春邮件处理中心工艺设备安装工程监理的实践，详细论述了监理过程中监理工程师应采取的措施，并提出了邮件处理中心工艺设备安装工程监理中应注意的几个问题。     

参数化单胞计算三维编织预制件纤维体积含量

在Pro/E中建立了三维编织预制件的内部单胞、表面单胞和棱角单胞的3D实体模型,并对模型进行了参数化设计。当编织工艺参数改变时能自动生成新的单胞模型,单胞纤维体积由Pro/E的模型分析功能直接输出。提出了基于参数化单胞计算预制件纤维体积含量的公式。计算了长方体形预制件的纤维体积含量,并与实测值进行比较,理论计算与实验结果吻合良好。计算了扇环形预制件的纤维体积含量,为复杂外形预制件纤维体积含量的计算提供了新方法。     

植物乳杆菌G8菌株产细菌素最佳条件的研究

对甘蓝泡菜的一株产细菌素植物乳杆菌ＬａｃｔｏｂａｃｉｌｌｕｓｐｌａｎｔａｒｕｍＧ８进行研究,确定了在ＭＲＳ液体培养其中细菌素产生的条件。通过Ｌ９３＾４正交试验,筛选出其最佳产细菌素的组合为Ｃ２Ｄ２Ａ１Ｂ２即起始ＰＨ值为６．０;培养温度为３０℃,葡萄糖浓度为０．５％,蛋白胨浓度为１％。     

All-Visible-Light Triggered Photoswitch of Dithienylethene Derivatives with Molecular Conformation Changes Excess 5 Å

Developing new all-visible-light driven fluorescent molecular switches has attracted much interests due to their important application prospects in materials science and life science. Herein, three novel all-visible-light triggered fluorescent molecular photoswitches ( 2P3 , 4F , and 4Cl ) are designed and prepared, which are realized by prolonging π-conjugation length with aggregated-induced emission units. These photoswitches show reversible photochromic and fluorescent switching in dilute solutions and films under 420 nm and 560 nm irradiations. Meanwhile, upon alternating irradiations with 450 nm/560 nm light, effective photochromic and fluorescent switching in powder states are also achieved. More interestingly, two distinct conformations with different photochromic abilities can be altered by solvents polarity. The size difference of the two conformations is over 5 Å in the vertical direction which is one of the largest changes among photochromic molecules based on dithienylethene. The accompanying conformational changes are analysed to understand the relationship between solvent characteristics and crystal structure, as well as the intermolecular interaction in solid state for all-visible-light triggered photoswitching molecules.     

Robust Flexible Textile Tribovoltaic Nanogenerator via a 2D 2H-MoS2/Ta4C3 Dynamic Heterojunction

The tribovoltaic effect can convert semiconductor interfacial frictional mechanical energy into direct current (DC) electricity, but the flexibility and durability of semiconductor materials limit its application in wearable electronic. Herein, a robust flexible textile tribovoltaic nanogenerator is presented based on a 2D dynamic heterojunction of 2H-MoS₂/Ta₄C₃ (MTNG). During the friction process, a built-in electric field (E_b) and an additional interfacial electric field (E_CE) are generated in a continuous dynamic contact of 2H-MoS₂/Ta₄C₃, and through the 2H-MoS₂/Ta₄C₃ dynamic heterojunction, a significant number of electron-hole pairs are excited and move directionally to generate a DC. The influences of mechanical pressure and sliding speed on output performance of MTNGs are systematically investigated. The MTNGs deliver excellent output power density (39.15 mW m²) and outstanding robustness (43 000 cycles). Ten MTNGs can be connected in series to obtain a DC voltage of 3.3 V and in parallel to obtain a DC current of 75 µA. Furthermore, the MTNGs can effectively power a variety of commercial electronic watches and calculators by harvesting human kinetic energy. A 2D dynamic heterojunction 2H-MoS₂/Ta₄C₃ DC nanogenerator is described and offers a workable option for the creation of flexible DC power sources and self-powered wearable electronics.     

外消旋玫瑰醚合成的研究

该文报导以天然香茅醇为原料,采用光敏氧化法合成外消旋玫瑰醚。通过的氧化还、还原、环化三个单元的影响因素的探讨,筛选出合理的工艺条件,产品纯度〉９８％;茯理化指标,香气均达到国外同类产品的水平。     

Design of the QoS framework for the IEEE 802.16 mesh networks

IEEE 802.16 (WiMax) technology is designed to support broadband speeds over wireless networks for the coming era of broadband wireless access (BWA). IEEE 802.16 is expected to provide transmission of high‐rate and high‐volume multimedia data streams for fixed and mobile applications. As an extension of point‐to‐multipoint (PMP) configuration, the IEEE 802.16 mesh mode provides a quicker and more flexible approach for network deployment. Multimedia networking requires quality‐of‐service (QoS) support, which demands elaborate mechanisms in addition to the four service types defined in the specification. By examining standard centralized and distributed scheduling/routing schemes in the mesh mode from QoS aspect, a BS‐controlled and delay‐sensitive scheduling/routing scheme is proposed in the paper. Associate mechanisms including admission control, flow setup and link state monitoring are also proposed. Integration of the proposed mechanisms is presented as a complete QoS framework. Simulation study has demonstrated that the average delay as well as the delay jitters per hop in the proposed scheme is smaller than that of the distributed scheme and much smaller than that of the centralized scheme. Furthermore, proposed mechanisms can also achieve higher throughput than the contrasts and generate much smaller signaling overhead, making the proposed framework a promising scheme for multimedia support in the IEEE 802.16 mesh network. Copyright © 2009 John Wiley & Sons, Ltd.     

Effects of Interfacial Dielectric Layers on the Electrical Performance of Top‐Gate In‐Ga‐Zn‐Oxide Thin‐Film Transistors

We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top‐gate In‐Ga‐Zn‐oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below 200°C, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as Si₃N₄ and Al₂O₃, the electrical properties are analyzed. After post‐annealing at 200°C for 1 hour in an O₂ ambient, the sub‐threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative‐bias stress tests on TFTs with a Si3N4 IDL, the degradation sources are closely related to unstable bond states, such as Si‐based broken bonds and hydrogen‐based bonds. From constant‐current stress tests of Id = 3 µA, an IGZO‐TFT with heat‐treated Si₃N₄ IDL shows a good stability performance, which is attributed to the compensation effect of the original charge‐injection and electron‐trapping behavior.