Output intersampling approach to direct closed-loop identification

A new direct closed-loop identification method, which uses the output intersampling technique, is proposed in this note. By using the intersampled plant input-output data, the proposed method removes the traditional restrictive identifiability condition, and does not require an external persistently exciting (PE) test signal     

Comprehensive Analysis of Oligo/Polysialylglycoconjugates in Cancer Cell Lines

In cancer cells, cell-surface sialylation is altered, including a change in oligo/polysialic acid (oligo/polySia) structures. Since they are unique and rarely expressed in normal cells, oligo/polySia structures may serve as promising novel biomarkers and targets for therapies. For the diagnosis and treatment of the disease, a precise understanding of the oligo/polySia structures in cancer cells is necessary. In this study, flow cytometric analysis and gene expression datasets were obtained from sixteen different cancer cell lines. These datasets demonstrated the ability to predict glycan structures and their sialylation status. Our results also revealed that sialylation patterns are unique to each cancer cell line. Thus, we can suggest promising combinations of antibody and cancer cell for glycan prediction. However, the precise prediction of minor glycans need to be further explored.     

Hematopoietic–Mesenchymal Signals Regulate the Properties of Mesenchymal Stem Cells

It is well known that the properties of hematopoietic stem/progenitor cells (HSCs), such as their self-renewal ability and multipotency, are maintained through interactions with mesenchymal stem/stromal cells (MSCs). MSCs are rare cells that are present in the bone marrow and are useful for clinical applications due to their functional ability. To obtain the necessary number of cells, MSCs must be cultured to expand, but this causes a remarkable decrease in stem cell properties, such as multipotency and proliferation ability. In this study, we show that the c-Mpl signal, which is related to the maintenance of hematopoietic stem cells, has an important effect on the proliferation and differentiation ability of MSCs. Utilizing a co-culture system comprising MSCs and HSCs, it is suggested that signaling from hematopoietic cells to MSCs supports cell proliferation. Interestingly, the enhanced proliferation ability of the HSCs was decreased in c-Mpl knock-out HSCs (c-Mpl-KO). In addition, the MSCs co-cultured with c-Mpl-KO HSCs had reduced MSC marker expression (PDGFRa and Sca-1) compared to the MSCs co-cultured with c-Mpl-wild-type HSCs. These results suggest that a hematopoietic–mesenchymal signal exists, and that the state of the HSCs is important for the stability of MSC properties.     

Functional and Structural Insights into Human PPARα/δ/γ Subtype Selectivity of Bezafibrate,Fenofibric Acid,and Pemafibrate

Among the agonists against three peroxisome proliferator-activated receptor (PPAR) subtypes, those against PPARα (fibrates) and PPARγ (glitazones) are currently used to treat dyslipidemia and type 2 diabetes, respectively, whereas PPARδ agonists are expected to be the next-generation metabolic disease drug. In addition, some dual/pan PPAR agonists are currently being investigated via clinical trials as one of the first curative drugs against nonalcoholic fatty liver disease (NAFLD). Because PPARα/δ/γ share considerable amino acid identity and three-dimensional structures, especially in ligand-binding domains (LBDs), clinically approved fibrates, such as bezafibrate, fenofibric acid, and pemafibrate, could also act on PPARδ/γ when used as anti-NAFLD drugs. Therefore, this study examined their PPARα/δ/γ selectivity using three independent assays—a dual luciferase-based GAL4 transactivation assay for COS-7 cells, time-resolved fluorescence resonance energy transfer-based coactivator recruitment assay, and circular dichroism spectroscopy-based thermostability assay. Although the efficacy and efficiency highly varied between agonists, assay types, and PPAR subtypes, the three fibrates, except fenofibric acid that did not affect PPARδ-mediated transactivation and coactivator recruitment, activated all PPAR subtypes in those assays. Furthermore, we aimed to obtain cocrystal structures of PPARδ/γ-LBD and the three fibrates via X-ray diffraction and versatile crystallization methods, which we recently used to obtain 34 structures of PPARα-LBD cocrystallized with 17 ligands, including the fibrates. We herein reveal five novel high-resolution structures of PPARδ/γ–bezafibrate, PPARγ–fenofibric acid, and PPARδ/γ–pemafibrate, thereby providing the molecular basis for their application beyond dyslipidemia treatment.     

Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors

We have experimentally demonstrated structural advantages due to rounded corners of rectangular-like cross-section of silicon nanowire (SiNW) field-effect transistors (FETs) on on-current (I_ON), inversion charge density normalized by a peripheral length of channel cross-section (Q_inv) and effective carrier mobility (μ_eff). The I_ON was evaluated at the overdrive voltage (V_OV) of 1.0 V, which is the difference between gate voltage (V_g) and the threshold voltage (V_th), and at the drain voltage of 1.0 V. The SiNW nFETs have revealed high I_ON of 1600 μA/μm of the channel width (w_NW) of 19 nm and height (h_NW) of 12 nm with the gate length (L_g) of 65 nm. We have separated the amount of on-current per wire at V_OV = 1.0 V to a corner component and a flat surface component, and the contribution of the corners was nearly 60% of the total I_ON of the SiNW nFET with L_g of 65 nm. Higher Q_inv at V_OV = 1.0 V evaluated by advanced split-CV method was obtained with narrower SiNW FET, and it has been revealed the amount of inversion charge near corners occupied 50% of all the amount of inversion charge of the SiNW FET (w_NW = 19 nm and h_NW = 12 nm). We also obtained high μ_eff of the SiNW FETs compared with that of SOI planar nFETs. The μ_eff at the corners of SiNW FET has been calculated with the separated amount of inversion charge and drain conductance. Higher μ_eff around corners is obtained than the original μ_eff of the SiNW nFETs. The higher μ_eff and the large fractions of I_ON and Q_inv around the corners indicate that the rounded corners of rectangular-like cross-sections play important roles on the enhancement of the electrical performance of the SiNW nFETs.     

Optical loss increase in optical fibre coated with silicone resin containing Si?D

One possible origin of the loss increase phenomenon with heat treatment at 200°C (H2 evolution from the coating material) has been investigated, using optical fibre coated with silicone resin containing the Si?D group. Although OH absorption at 1.4 ?m increases with 200°C heat treatment, no OD peak is observed. It is suggested that silicone resin containing no Si?H and Si?CH2?CH2?Si groups is appropriate as a coating material as no H2 evolution is present.     

Eight-channel flat spectral response arrayed-waveguide multiplexer with asymmetrical Mach-Zehnder filters

An eight-channel flat spectral response arrayed-waveguide grating (AWG) multiplexer with asymmetrical Mach-Zehnder filters has been fabricated on the planar lightwave circuit (PLC). The monotonic spectral loss characteristics of AWG have been canceled by the opposite spectral response in the asymmetric MZ filter. The 1.5 dB bandwidth of 141 GHz and 3 dB bandwidth of 159 GHz are obtained for the 200 GHz channel spacing. The 1.5 dB bandwidth becomes 1.8 times wider than that of the conventional AWG. Crosstalks to neighboring and all other channels are less than -24 dB and the on-chip insertion losses range from 7.0 to 7.4 dB, respectively.     

Annealing effects of a high-quality ZnTe substrate

The sharp photoluminescence (PL) and optical-reflection spectra in the bandedge region of the high-quality nondoped ZnTe substrate (100) were observed at 4.2 K. Free exciton, associated with lower and upper polaritons (EX^L and EX^U) at 2.382 eV and 2.381 eV, respectively, were clearly observed. This meant that this substrate was high quality. The intensity of a bound exciton peak (2.375 eV), which is caused by a Zn vacancy, of a neutral acceptor decreased with an increase of the Zn vapor pressures.     

InxGa1−xAs ohmic contacts to n-type GaAs with a tungsten nitride barrier

Significant reduction of the contact resistance of In_0.7Ga_0.3As/Ni/W contacts (which were previously developed by sputtering in our laboratory) was achieved by depositing a W₂N barrier layer between the Ni layer and W layer. The In_0.7Ga_0.3 As/Ni/W₂N/W contact prepared by the radio-frequency sputtering technique showed the lowest contact resistance of 0.2 Ωmm after annealing at 550°C for 10 s. This contact also provided a smooth surface, good reproducibility, and excellent thermal stability at 400°C. The polycrystalline W₂N layer was found to suppress the In diffusion to the contact surface, leading to improvement of the surface morphology and an increase in the total area of the In_xGa−As between metal and the GaAs substrate. These improvements are believed to reduce the contact resistance.     

An organic infrared electroluminescent diode utilizing aphthalocyanine film

Electroluminescent (EL) diodes utilizing metal-free phthalocyanine (H₂Pc) have been fabricated by the vacuum evaporation method. The EL characteristics of the diodes depending upon the metal cathode and the characteristics of the diodes with the coevaporated layer with 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM) have been investigated. We have demonstrated the infrared electroluminescence originated from the radiative transition corresponding to the Q band of H₂Pc by taking the energy band structure into consideration