The current distribution and AC resistance of a microstripstructure

The AC resistance of the strip in a microstrip structure is compared with that of an isolated strip for better understanding of the conductor loss mechanism. An analysis is presented of the AC resistance in a microstrip structure for any metallization thickness by deriving the current distribution over the strip cross section. The analysis uses the separation of variables technique and the Green's function method. It shows that the skin current of the strip is concentrated toward the ground plane in a microstrip structure. In the extreme case, the AC resistance of the strip can be twice as high as the AC resistance of the same isolated strip. The imperfect ground plane also adds to the total conductor loss of a microstrip line. For a wide strip over a lossy ground plane at high frequency, the ground plane surface current distribution is concentrated directly under the strip, and the ground plane AC resistance can be as large as the strip AC resistance. Therefore, the total AC resistance at the microstrip line can be four times as high as that of an isolated strip conductor     

Amplified spontaneous emission effects in semiconductor laseramplifiers

The analysis presented provides a quantitative method for predicting semiconductor laser amplifier performance in the presence of ASE (amplified spontaneous emission). It indicates that in order to increase the fraction of pump power that contributes to the amplification of the input laser field relative to that spent in overcoming internal losses, an amplifier should operate at as high an excitation level as possible. This may mean operating an amplifier above its free-running oscillation threshold. A limitation to the maximum pump power is the increase in ASE. With too high an excitation, ASE dominates over the amplified input laser field, resulting in a quenching of the amplifier gain, efficiency and coherence. ASE effects may be mitigated by increasing the input laser intensity, decreasing the amplifier facet reflectivities, or, in some cases, tuning the master oscillator so that it is resonant with the amplifier. The analysis indicates that minimizing the facet reflectivity is the most effective way to circumvent ASE limitations to power scaling semiconductor laser amplifiers     

Effect of processing conditions on inversion layer mobility and interface state density in 4H−SiC MOSFETs

N-channel, inversion mode MOSFETs have been fabricated on 4H−SiC using different oxidation procedures, source/drain implant species and implant activation temperature. The fixed oxide charge and the field-effect mobility in the inversion layer have been extracted, with best values of 1.8×10¹² cm⁻² and 14 cm²/V-s, respectively. The interface state density, D_it close to the conduction band of 4H−SiC has been extracted from the subthreshold drain characteristics of the MOSFETs. A comparison of interface state density, inversion layer mobility and fixed oxide charges between the different processes indicate that pull-out in wet ambient after reoxidation of gate oxide improves the 4H−SiC/SiO₂ interface quality.     

Role of PbSe Structural Stabilization in Photovoltaic Cells

Semiconductor nanocrystals are promising materials for printed optoelectronic devices, but their high surface areas are susceptible to forming defects that hinder charge carrier transport. Furthermore, correlation of chalcogenide nanocrystal (NC) material properties with solar cell operation is not straightforward due to the disorder often induced into NC films during processing. Here, an improvement in long‐range ordering of PbSe NCs symmetry that results from halide surface passivation is described, and the effects on chemical, optical, and photovoltaic device properties are investigated. Notably, this passivation method leads to a nanometer‐scale rearrangement of PbSe NCs during ligand exchange, improving the long‐range ordering of nanocrystal symmetry entirely with inorganic surface chemistry. Solar cells constructed with a variety of architectures show varying improvement and suggest that triplet formation and ionization, rather than carrier transport, is the limiting factor in singlet fission solar cells. Compared to existing protocols, our synthesis leads to PbSe nanocrystals with surface‐bound chloride ions, reduced sub‐bandgap absorption and robust materials and devices that retain performance characteristics many hours longer than their unpassivated counterparts.     

Editorial: Big Data Innovation for Sustainable Cognitive Computing

Mobile Networks and Applications -     

High efficiency,high switching speed,AlGaAs/GaAs P-HEMT DC–DC converter for integrated power amplifier modules

This paper presents a high efficiency, high switching frequency DC–DC buck converter in AlGaAs/GaAs technology, targeting integrated power amplifier modules for wireless communications. The switch mode, inductor load DC–DC converter adopts an interleaved structure with negatively coupled inductors. Analysis of the effect of negative coupling on the steady state and transient response of the converter is given. The coupling factor is selected to achieve a maximum power efficiency under a given duty cycle with a minimum penalty on the current ripple performance. The DC–DC converter is implemented in 0.5 μm GaAs p-HEMT process and occupies 2 × 2.1 mm² without the output network. An 8.7 nH filter inductor is implemented in 65 μm thick top copper metal layer, and flip chip bonded to the DC–DC converter board. The integrated inductor achieves a quality factor of 26 at 150 MHz. The proposed converter converts 4.5 V input to 3.3 V output for 1 A load current under 150 MHz switching frequency with a measured power efficiency of 84%, which is one of the highest efficiencies reported to date for similar current/voltage ratings.     

Approximation of dynamical time-variant systems by continuous-time recurrent neural networks

This paper studies the approximation ability of continuous-time recurrent neural networks to dynamical time-variant systems. It proves that any finite time trajectory of a given dynamical time-variant system can be approximated by the internal state of a continuous-time recurrent neural network. Given several special forms of dynamical time-variant systems or trajectories, this paper shows that they can all be approximately realized by the internal state of a simple recurrent neural network.     

The effects of electron-hole Coulomb interaction in semiconductorlasers

A recent many-body theory is applied to investigate the corrections to semiconductor laser gain and carrier-induced refractive index. The results show nonnegligible modifications to these quantities and demonstrate the importance of band-gap renormalization and Coulomb enhancement. The many-body Coulomb corrections also result in a different prediction of filamentation effects in semiconductor lasers     

Nonequilibrium many-body theory of intersubband lasers

We present a theory for intersubband lasers, based on the solution of the Maxwell-semiconductor Bloch equations for the laser field and active medium. The collision contributions are treated within the relaxation rate approximation, where the relaxation rates are determined by microscopic scattering calculations. The theory is suitable for investigating steady-state as well as dynamical laser characteristics. As examples of applications of the theory, we examine the thermal dependence of the laser output versus current density curve and the response to modulation of the injection current, for a three-subband laser. The influence of the nonparabolicity of the conduction band and Hartree-Fock many-body effects are investigated.