An investigation of the feasibility of utilizing GPS/TEC“signatures” for near-real time forecasting of auroral-Epropagation at high-HF and low-VHF frequencies

VHF propagation on ⩽5300 km polar paths has been documented during the maximum phase of sunspot cycle 19. Mode analysis on these polar paths has shown that auroral-E ionization (AEI) supported some modes. Electron densities and plasma frequencies which could support AEI modes at frequencies up to 46 MHz have also been measured. Long distance VHF propagation from AEI has also been reported by radio amateurs using frequencies in the 2 m band in a “sidescatter mode”. An AEI experiment has been in operation between Wales (Alaska) and Fairbanks (Alaska) where a 75-watt CW transmitter located in Wales transmits the Morse letter “R” every 5 s, and a receiver in Fairbanks detects the 25.5 MHz signal whenever AEI is present near the midpoint of the 960 km path. Another experiment is underway using a GPS total electron content (TEC) receiving station at Fairbanks also using AEI data from the Wales-Fairbanks experiment. From this, the authors examine 58 passes of GPS satellites whose E-layer penetration points lie close to the midpoint of the Wales-Fairbanks path and find that there is a threshold value of TEC above which auroral-E (AE) propagation occurs. They also find that AEI propagation is strongly correlated with large- and medium-scale E-region structures in TEC determined by the GPS measurements. When TEC ionospheric structures are not present near the Wales-Fairbanks path midpoint, no AEI signal is received. The authors tentatively conclude that the occurrence of these specific TEC signatures may be utilized as predictors of AEI forward propagation on paths within and parallel to the auroral oval     

A probe for making near-field measurements with minimaldisturbance: the optically modulated scatterer

We describe an optically modulated scatterer as an electric-field probe for measuring radio-frequency and microwave fields. It has a high spatial resolution and the ability to operate very close to conducting and dielectric objects without appreciable distortion of the field to be measured. Thus, it can scan close to antennas and diffracting metal structures. We describe how the electric field is deduced from the measurements and present gain measurements and far-field patterns deduced from near-field scans of antennas. The results are tested by comparing them with those obtained by established measurement techniques     

MBE growth and properties of ZnO on sapphire and SiC substrates

Molecular beam epitaxy (MBE) of ZnO on both sapphire and SiC substrates has been demonstrated. ZnO was used as a buffer layer for the epitaxial growth of GaN. ZnO is a würtzite crystal with a close lattice match (<2% mismatch) to GaN, an energy gap of 3.3 eV at room temperature, a low predicted conduction band offset to both GaN and SiC, and high electron conductivity. ZnO is relatively soft compared to the nitride semiconductors and is expected to act as a compliant buffer layer. Inductively coupled radio frequency plasma sources were used to generate active beams of nitrogen and oxygen for MBE growth. Characterization of the oxygen plasma by optical emission spectroscopy clearly indicated significant dissociation of O₂ into atomic oxygen. Reflected high energy electron diffraction (RHEED) of the ZnO growth surface showed a two-dimensional growth. ZnO layers had n-type carrier concentration of 9 × 10¹⁸ cm⁻³ with an electron mobility of 260 cm²/V-s. Initial I-V measurements displayed ohmic behavior across the SiC/ZnO and the ZnO/GaN heterointerfaces. RHEED of GaN growth by MBE on the ZnO buffer layers also exhibited a two-dimensional growth. We have demonstrated the viability of using ZnO as a buffer layer for the MBE growth of GaN.     

Applying sensors to automatic assembly systems

The author describes the classes of sensors that are available to the automatic assembly machine designer. Examples of each class of sensor along with a discussion of their specific benefits and problems are included. Guidelines that will aid a machine designer in the selection and application of sensors for automatic assembly systems are provided. The necessity of providing methods in the automation for verifying the sensors' accuracy is discussed     

Application of an asymmetrical four point bend shear test to solder joints

The asymmetrical four-point bend shear (AFPB) test method was used to measure the shear strength and creep properties through the stress relaxation experiments using three different Pb-free solder joint compositions in an assolidified condition. Since it was difficult to shear the uniform specimens and the local bending usually occurs at the inner loading points, the notches were introduced at the joint line to preferentially weaken this region. The stress analysis by finite element modeling showed that the straight notches transform the parabolic shear stress distribution in the uniform specimen into a relatively uniform shear distribution along the bond line in the notched specimens. Therefore, the shear strength results from the notched specimens are expected to be much more accurate. Experiments showed that both the Sn-3.6Ag-1Cu (wt.%) and Sn-3.6Ag-1Cu-0.45Co joints have superior strength and creep properties as compared to the Sn-3.5Ag joint. However, there was no statistical difference between the shear strength of the Sn-3.6Ag-1Cu and Sn-3.6Ag-1Cu-0.45 Co joints. Moreover, the difference between the creep resistance of these two types of joints was small.     

Characterization of germanium implanted Si1−xGex layer

Characterization of a Si_1−xGe_x layer formed by high-dose germanium implantation and subsequent solid phase epitaxy is reported. Properties of this layer are obtained from electrical measurements on diodes and transistors fabricated in this layer. Results are compared with those of the silicon control devices. It was observed that the germanium implantation created considerable defects that are difficult to eliminate with annealing. These defects result in boron deactivation in the p-type regions of the devices, giving rise to larger resistance. Optimization of the device structure and fabrication process is discussed.     

Phase Equilibria of BaO-R2O3-CuO z Systems (R = Y and Lanthanides) under CO2-free Conditions

For applications ranging from phase equilibria to the processing of second-generation high T _c superconductor-coated-conductors, phase diagrams constructed under carbonate-free conditions are needed. Subsolidus phase equilibria of BaO-R₂O₃-CuO _z (R = Ho) have been investigated at (810°C), 21 kPa (875°C) and 0.1 MPa (850 and 930°C) by applying controlled atmosphere methods to minimize the presence of carbonate and CO₂ and H₂O contamination. Under carbonate-free conditions, most of these phase diagrams are different from those reported in the literature. In this paper, we also review and compare the phase diagrams of ten BaO-R₂O₃-CuO _z systems (R = Nd, Sm, Eu, Gd, Dy, Y, Ho, Er, Tm and Yb) that were previously determined in this laboratory under Among these diagrams, a distinct trend of phase formation and tie-line relationships is observed.     

Microstructural modifications and properties of Sn-Ag-Cu solder joints induced by alloying

Slow cooling (1–3°C/sec) of Sn-Ag-Cu and Sn-Ag-Cu-X (X = Fe, Co) solder-joint specimens, made by hand soldering, simulated reflow in a surface-mount assembly to achieve similar as-solidified joint microstructures for realistic shear-strength testing, using Sn-3.5Ag (wt.%) as a baseline. Consistent with predictions from a recent Sn-Ag-Cu ternary phase-diagram study, either Sn dendrites, Ag₃Sn primary phase, or Cu₆Sn₅ primary phase were formed during solidification of joint samples made from the selected near-eutectic Sn-Ag-Cu alloys. Minor substitution of Co for Cu in Sn-3.7Ag-0.9Cu refined the joint-matrix microstructure by an apparent catalysis effect on the Cu₆Sn₅ phase, whereas Fe substitution promoted extreme refinement of the Sn-dendritic phase. Ambient-temperature shear strength was reduced by Sn dendrites in the joint microstructure, especially coarse dendrites in solute poor Sn-Ag-Cu, e.g., Sn-3.0Ag-0.5Cu, while Sn-3.7Ag-0.9Cu with Co and Fe additions have increased shear strength. At elevated (150°C) temperature, no significant difference exists between the maximum shear-strength values of all of the alloys studied.     

Multimodal Magneto‐Plasmonic Nanoclusters for Biomedical Applications

Multimodal nanostructures can help solve many problems in the biomedical field including sensitive molecular imaging, highly specific therapy, and early cancer detection. However, the synthesis of densely packed, multicomponent nanostructures with multimodal functionality represents a significant challenge. Here, a new type of hybrid magneto‐plasmonic nanoparticles is developed using an oil‐in‐water microemulsion method. The nanostructures are synthetized by self‐assembly of primary 6 nm iron oxide core‐gold shell particles resulting into densely packed spherical nanoclusters. The dense packing of primary particles does not change their superparamagnetic behavior; however, the close proximity of the constituent particles in the nanocluster leads to strong near‐infrared (NIR) plasmon resonances. The synthesis is optimized to eliminate nanocluster cytotoxicity. Immunotargeted nanoclusters are also developed using directional conjugation chemistry through the Fc antibody moiety, leaving the Fab antigen recognizing region available for targeting. Cancer cells labeled with immunotargeted nanoclusters produce a strong photoacoustic signal in the NIR that is optimum for tissue imaging. Furthermore, the labeled cells can be efficiently captured using an external magnetic field. The biocompatible magneto‐plasmonic nanoparticles can make a significant impact in development of point‐of‐care assays for detection of circulating tumor cells, as well as in cell therapy with magnetic cell guidance and imaging monitoring.     

Microwave switch: LAMPS (light-activated microwave photoconductive switch)

A new microwave switch, the light-activated microwave photoconductive switch consisting of a heterostructure photoconductive switch (HPCS) with a flip-chip bonded vertical-cavity surface-emitting laser is reported. An insertion loss of 0.17 dB at a laser power of 15 mW and an isolation of 25 dB were obtained at 1 GHz. Excellent linearity was obtained with second and third order intercepts measured at 960 MHz of SOI=115 dBm and TOI=65 dBm at 960 MHz, respectively.