Analysis of thermal instability in multi-finger power AlGaAs/GaAsHBT's

A new theory is developed in this paper to explain the collapse of current gain in multi-finger power AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT's). The reasons behind this unwanted phenomenon are fully clarified using a simple model to investigate the thermo-electrical interaction between the fingers. The existence of multi-value equilibrium points in model's constitutive equations is shown to be the necessary condition for the collapse of current gain to appear. For a N-finger device, N different patterns of collapse exist. The criterion to select the global stable pattern is given. The method has been used to predict the collapse in AlGaAs/GaAs HBT's and the agreement is excellent. The method also predicts that the collapse can happen far earlier than is normally expected in multi-finger high-power devices. The influence of ballasting resistance and thermal resistance is also investigated     

对洪水分级的浅见

洪水的等级划分应考虑流量、水位、防洪能力及灾害等因素,综合这些因素把洪水分成5个等级。1、2级洪水,洪水流量小,水位低,基本无灾;3级洪水,洪水流量较大或水位较高,有一定灾害;4级洪水,为大洪水或高水位,有较大灾害;5级洪水,为特大洪水或高水位,灾情严重。     

新的钢铁工业结构与铁矿资源条件的能源优化模型研究

发展我国钢铁工业，资源和能源已经成为两个重要的制约因素。到本世纪末，我国钢产量达1．2亿t，所需资源必须有部分进口。本文论述了新的钢铁企业模型结构及采用部分进口废钢和铁矿石的能源优化问题。     

钢管内径光电检测装置

介绍了一种检测细长钢管内径的光电检测装置。该装置利用线阵ＣＣＤ作传感器，采用８０３１单片机作为主控制。     

Air bearing design, optimization, stability analysis andverification for sub-25 nm flying

Three sub-25 nm fly height sliders are presented for near contact recording. The designs are geared towards the goal of achieving 10 Gb/in ² areal density. The optimization procedure presented shows promise for facilitating achievement of this goal. The dynamic simulations show the stability of these designs when disturbed from their steady state conditions     

钻井平台电站无功功率动态补偿技术的应用

论述了海洋钻井平台的功率因数及改善功率因数的重要意义和必要性，对实时无功功率动态补偿装置作了介绍，并对实施功率补偿后取得的效果和经济测算作了分析，提出了提高功率因数，进行功率补偿的推广应用建议。     

Measurement and modeling of the sidewall threshold voltage ofmesa-isolated SOI MOSFETs

Five-terminal silicon-on-insulator (SOI) MOSFETs have been characterized to determine the threshold voltage at the front, back, and sidewall as a function of the body bias. The threshold voltage shift with the body bias at the front and back interfaces can be explained by the standard bulk body effect equation. However, the threshold voltage shift at the sidewall is smaller than predicted by this equation and saturates at large body biases. This anomalous behavior is explained by two-dimensional charge sharing between the sidewall and the front and back interfaces. An analytical model that accounts for this charge sharing by a simple trapezoidal approximation of the depletion regions and correctly predicts the sidewall threshold voltage shift and its saturation is discussed. The model makes it possible to measure the sidewall threshold even when it is larger than the front threshold voltage     

情浸丹青写名园——小谈郝永明的古建园林绘画艺术

郝永明古建园林绘画作品另辟蹊径，难能可贵。郝永明的画，不仅给我国美术宝库增加了一份积累，也给古建园林艺术增添了珍贵的资料。     

A 4-MB on-chip L2 cache for a 90-nm 1.6-GHz 64-bit microprocessor

A 4-MB L2 data cache was implemented for a 64-bit 1.6-GHz SPARC(r) RISC microprocessor. Static sense amplifiers were used in the SRAM arrays and for global data repeaters, resulting in robust and flexible timing operation. Elimination of the global clock grid over the SRAM array saves power, enabled by combining the clock information with array select signals. Redundancy was implemented flexibly, with shift circuits outside the main data array for area efficiency. The chip integrates 315 million transistors and uses an 8-metal-layer 90-nm CMOS process.     

60m高度处单片露天超高混凝土悬臂墙的设计与施工

通过采用竖向预应力技术 ,解决了 60m高度处单片 8m高悬臂钢筋混凝土墙根部裂缝宽度超过规范限值的问题 ;采用将预应力钢绞线顶端锚固于墙高中段等结构和施工措施 ,控制墙体长细比不超过 3 0 ,减少了由于长细比过大对墙体承载力的不利影响