鄂尔多斯盆地东部奥陶系盐下储层预测

鄂尔多斯盆地奥陶系的膏盐岩沉积面积达5×104km2,天然气的勘探程度很低。为此,利用测井技术和地震反演技术对盐下储层进行了预测。首先,通过对盐下沉积特征的综合分析,对盐下储集层段的发育层位和主要储集岩类型进行了描述;然后,采用ELAN测井技术对盐下储层的物性进行了分析,认为盐下储层的物性在普遍较差的背景上存在相对发育的层段和区带;最后,利用全局优化多道地震反演技术,对岩下储层进行了预测,认为盐下存在的局部隆起是圈闭和储层发育的有利区带。     

闪光灯泵浦Nd3+:GGG激光特性研究

用闪光灯泵浦掺钕钆镓石榴石(Nd^3 ：GGG)激光晶体，研究了脉冲宽度0．5ms、1ms、1．5ms和2ms的放电泵浦下激光输出，实验获得了1．92J的最大激光能量．     

Segmented polymer networks containing amino‐dendrimers

Polymer networks in which poly(propylene imine) dendrimers (Astramol?) are connected to each other by linear polytetrahydrofuran (polyTHF) segments, were prepared by two methods. The first method was a one‐step procedure in which bifunctionally living polyTHF, obtained by initiation of the THF polymerization with trifluoromethane sulfonic anhydride (triflic anhydride), was reacted with an amino‐dendrimer. This reaction was very fast but did not allow formation of the end products. The second method was a two‐step procedure. In a first step, living polyTHF, prepared with acryloyloxybutyl triflate as initiator, was grafted on an amino‐dendrimer, to form a star‐like, acrylate‐terminated polyTHF multi‐macromonomer with the dendrimer as core. In a second step, networks were obtained by Michael addition between the acrylate end‐groups and unreacted amino‐groups of the dendrimer. This cross‐linking reaction occurred spontaneously upon heating of the solution of the multi‐macromonomer with gelation times varying from a few minutes to a few hours, depending on the temperature and the composition of the prepolymers. With this method it was possible to prepare networks in the form of coatings or films. © 2003 Society of Chemical Industry     

An optimization model for placement of wavelength converters to minimize blocking probability in WDM networks

The introduction of wavelength converters in wavelength division multiplexing (WDM) networks can reduce the blocking probabilities of calls. In this paper, we study the problem of placing a given number of converters in a general topology WDM network such that the overall system blocking probability is minimized. The original contributions of this work are the following: 1) formulation of success probability in a network as a polynomial function of the locations of converters; 2) proposal of an optimization model of the converter placement problem as the minimization of a polynomial function of 0-1 variables under a linear constraint, so that standard optimization tools can be employed to solve the problem; and 3) design of a search algorithm that can efficiently find the optimal solution to the converter placement problem. Experiments have been conducted to demonstrate the effectiveness of the proposed model and the efficiency of the algorithm.     

16信道0.35μmCMOS/VCSEL光发射模块

研究了垂直腔面发射激光器 (VCSEL)及其列阵器件的光谱特性、调制特性、高频特性及与微电子电路的兼容性 ,将 1× 16的VCSEL与CMOS专用集成电路进行多芯片组装 (MCM ) ,混合集成为 16信道VCSEL光发射功能模块 .测试过程中 ,功能模块的光电特性及其均匀性良好 ,测量的 - 3dB频带宽度大于 2GHz.     

微机械可调谐滤波器的研制

利用 Ga As/Al Ga As分布反馈 Bragg反射镜在 Ga As衬底上制作了一个微机械的调谐滤波器 .该器件在 7V调谐电压下调谐范围达28nm     

微波干燥在气相超稳Y型分子筛制备中的应用研究

研究了微波干燥在气相超稳Y型分子筛制备中的应用。结果表明，分子筛经微波干燥后，其理化性质有所改善，结晶度提高，经气相超稳化反应后其产品结构及物化性质与传统电加热干燥后的气相超稳产品基本一致，说明微波干燥可替代传统干燥方式。与传统电加热干燥方式相比，微波干燥能缩短干燥时间，有效降低能耗。     

菱镁矿固硫特性的理论分析

对菱镁矿在固体燃料燃烧过程中的固硫特性进行了理论研究，所得结论对进一步将菱镁矿作为固体燃料燃烧过程中的固硫剂具有非常重要的意义。     

Reduction of sodium-accelerated oxidation of silicon nitride ceramics by aluminium implantation

Norton NBD 200 silicon nitride ceramics were implanted with sodium to a dose of 7.0×10¹⁵cm^-2 at 72 keV (1 at% peak sodium content at 100 nm). The sodium-implanted samples were further implanted with aluminium to 7.3×10¹⁵cm^-2 at 87 keV (1 at% peak aluminium content at 100 nm). The implanted and unimplanted samples were oxidized in 1 atm dry oxygen at 1100 and 1300°C for 2–6 h. Profilometry and scanning electron microscopy measurements indicated that sodium implantation led to up to a two-fold increase in the oxidation rate of silicon nitride. The sodium effect was effectively neutralized when aluminium was co-implanted. The opposite effects of sodium and aluminium on the oxidation resistance of silicon nitride can be attributed to their different roles in modifying the structure and properties of the oxide formed. This revised version was published online in November 2006 with corrections to the Cover Date.