A model-based comparison of AlInAs/GaInAs and InP/GaInAs HBT's: aMonte Carlo study

The high-speed performances of AlInAs/GaInAs and InP/GaInAs heterojunction bipolar transistors (HBTs) are investigated using a one-dimensional self-consistent particle simulator. Optimum alloy compositions for a graded-gap base structure are obtained for both transistors through the tradeoff between the emitter-charging time and base transit time. The saturation velocity in the GaInAs n-type collector is found to be smaller than that in InP, which has been attributed to the diffusion of a large number of hot back-scattered Γ-valley electrons in the GaInAs collector. The difference in the collector transit time in p-type collectors is trivial, since the maximum electron velocity was restricted to below 1.2×10⁸ cm/s due to a strong nonparabolicity effect. The cutoff frequency for the former and the latter are estimated to be 2 and 1.5 times higher, respectively, than for AlGaAs/GaAs HBTs. These results are attributed to a larger bandgap difference between the emitter and base, to yield a high base built-in field, rather than a larger Γ-L band separation energy in the collector to enhance the velocity overshoot effect     

Phase relations in the Fe-Pu-U ternary system

An isothermal section of the Fe-Pu-U ternary system at 650 °C was assessed in a previous study. In the present study, the predictions of the phase relations in the Fe-Pu-U system to higher and lower temperatures were performed by applying the interaction parameters determined at 650 °C. Differential thermal analysis (DTA) for the Fe-Pu-U alloys was also carried out to confirm the phase relations in the temperature region of 500 to 800 °C. Both results agreed well. On the basis of the predicted ternary phase diagram, the phase relations for a region surrounded by Fe₂Pu, Fe₂U, U, and Pu were described by a reaction scheme and a projection of the liquidus surface.     

petit1, a conditional growth mutant of Arabidopsis defective in sucrose-dependent elongation growth

The hypocotyl of Arabidopsis is well suited for the analysis of cell elongation because it elongates without cell division. We have isolated a new class of recessive mutants, petit1 (pet1), which are defective in aspects of hypocotyl elongation. The short-hypocotyl phenotype of pet1 is caused by shortened cells. The cells of the elongation zone of the hypocotyl are often deformed. pet1 also shows defects in elongation of the roots, flower stalk, leaves, petals, pedicels, and siliques, and these defects cannot be repaired by the application of auxin, gibberellin, brassinolide, or an inhibitor of ethylene biosynthesis. The short-hypocotyl phenotype of pet1 is pronounced only in growth medium supplemented with sucrose, which has promotive effects on hypocotyl elongation. In pet1 this effect is much reduced, causing the sucrose-dependent short-hypocotyl phenotype of pet1. pet1 accumulates more soluble sugars than the wild type and also shows more intensive iodo-starch staining in the cotyledon and hypocotyl. These results indicate that PETIT1 is involved in a sugar-dependent elongation process that may include correct assembly of expanding cell wall architecture.     

Assessment of regional sympathetic nerve activity in vasospastic angina: analysis of iodine 123-labeled metaiodobenzylguanidine scintigraphy

Injury of the normal central nervous system is a major concern in the radiotherapy of brain tumors, but the pathogenesis of injury remains poorly understood. Modulation of the production of growth factors is associated with ischemia and traumatic injury in the central nervous system. Ionizing radiation has been shown to induce basic fibroblast growth factor in endothelial cells and in cells of a human breast carcinoma cell line. The inducibility of basic fibroblast growth factor after irradiation and its potential role in the recovery response of the central nervous system led us to investigate the effects of radiation on the expression of this growth factor in primary cultures of normal rat type 1 astrocytes. Astrocyte monolayers were exposed to ionizing radiation (1 to 10 Gy). Northern blot analysis revealed that doses of 2 to 10 Gy markedly reduced the expression of basic fibroblast growth factor as early as 1 h after irradiation, and that it remained below levels in unirradiated cells for at least 24 h. The effect was not associated with astrocyte cytotoxicity, and it appears to have some specificity for basic fibroblast growth factor since the levels of mRNA coding for ciliary neurotrophic factor and glial fibrillary acidic protein were not affected.     

A case of primary splenic large cell lymphoma with a t(9;14)(p13;q32)

Appropriately substituted 2,3-dihydro-7H-thiazolo[3,2-a]pyrimidin-7-ones 9-12 and 18 were considered as annulated analogues of HEPT (1-[(2-hydroxyethoxy)methyl]-6-(phenylthio)-thymine), and some of these compounds were also found active against HIV-1, the most active one being 2,3-dihydro-5-[(3,5-dimethylphenyl)methyl]-3-ethoxy-6-ethyl-7H- thiazolo[3,2-a]pyrimidin-7-one (10b). S-Alkylation of 5-alkyl-6-(arylmethyl)-2-thiouracils 1-4 was performed with 2-bromoacetaldehyde acetals to furnish the S-[bis(alkoxy)ethyl] derivatives 5-8 and with allyl bromide to furnish S-allyl derivatives 17. The target compounds 9-12 were obtained by an N1 regioselective intramolecular cyclization reaction of silylated 5-8 using trimethylsilyl trifluoromethanesulfonate (TMS triflate) as the catalyst. Treatment of the S-allyl derivatives 17 with bromine in dry methylene chloride afforded the 3-(bromomethyl) derivatives 18.     

Studies of 2D Cryocrystals by STM Techniques

Scanning tunneling microscopy (STM) studies of two-dimensional (2D) cryocrystals ⁴ He, Kr, Xe) physisorbed on graphite surfaces are presented. Individual helium atoms, usually thought to be invisible with STM, were recently observed on graphite surfaces at a density corresponding to the commensurate solid. Here we show that a local elastic deformation seems to be the principal mechanism responsible to render the atoms visible. Recent tight-binding calculations of the local density of states (LDOS) of graphite which predict the appearance of an energy gap support this picture. I-z curve measurements for the case of ⁴ He show a sharp drop (increase) of the tunneling current I at a certain tip-surface distance z during retraction (approach) of the tip. This drop (increase) may be associated with the tunneling of a single He adatom, opening new possibilities to study the quantum tunneling of atoms via STM.     

Capillary rise properties of porous mullite ceramics prepared by an extrusion method with various diameters of fiber pore formers

Porous mullite ceramics with unidirectionally oriented pores were prepared by an extrusion method using rayon fibers as the pore formers. Rayon fibers of 8.1, 9.6, 16.8, and 37.6 μm in diameter were used as the pore formers and were kneaded with alumina powder, kaolin clay, China earthen clay, and water to form pastes. These pastes were extruded into cylindrical tubes, dried, and fired at 1500 °C for 4 h. The apparent porosities ranged from 45.7 to 48.2 %. The pore size distributions showed a sharp peak at 9.4, 10.0, 15.6, and 30 μm with increasing fiber diameters. The height of the capillary rise was 1780, 1670, 1320, and 950 mm with increasing fiber diameter. The maximum capillary rise is much higher than previously reported. The contact angle and effective pore radius that determine the capillary rise ability were calculated by fitting the capillary rise curves using the Fries and Dreyer’s equation.     

Formation of atomically flat β-FeSi2/Si(100) interface using ion irradiated substrate

Thin uniform β-FeSi₂ films were fabricated on ion irradiated Si(100) substrates to achieve an atomically flat interface. Ion irradiation produces a surface with more defects than chemical etching; however, it is expected that the presence of defects can promote the formation of compound films such as β-FeSi₂ that require interdiffusion and reaction processes. However, excess defects can also result in random nucleation, poor crystallinity and a rough interface. Cross-sectional transmission electron microscopy was used to determine the optimum conditions for ion irradiation of the substrate to obtain a clear β-FeSi₂/Si interface.     

Analysis of Moiré Fringes Produced by Centrosymmetric Gratings

Abstract

A method of describing centrosymmetric gratings (radial, circular and spiral) is presented. The moiré-fringe profile produced by centrosymmetric gratings is analysed using polar coordinates. The concept of the angle of intersection for two superimposed gratings is examined and it is shown how from this study moiré patterns formed from centrosymmetric gratings can be analysed automatically by digital computer. Examples of theoretically predicted patterns, generated by the proposed procedure, are compared with actual moiré-fringe patterns. This method provides for the first time a procedure that can be used in engineering for improving the contrast of moiré patterns and for sharpening these patterns.