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121.
122.
Sang‐Heung Lee Seung‐Yun Lee Hyun‐Cheol Bae Ja‐Yol Lee Sang‐Hoon Kim Bo Woo Kim Jin‐Yeong Kang 《ETRI Journal》2005,27(5):569-578
The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz. 相似文献
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125.
本文描述在CCIR活动中对HDTV统一标准的争论和趋势。有关ETV,D2-MAC及数字电视地面广播系统的CCIR建议书,以及美国全数字HDTV的发展也作了介绍。 相似文献
126.
The notion of pseudorandomness is the theoretical foundation on which to consider the soundness of a basic structure used in some block ciphers. We examine the pseudorandomness of the block cipher KASUMI, which will be used in the next‐generation cellular phones. First, we prove that the four‐round unbalanced MISTY‐type transformation is pseudorandom in order to illustrate the pseudorandomness of the inside round function FI of KASUMI under an adaptive distinguisher model. Second, we show that the three‐round KASUMI‐like structure is not pseudorandom but the four‐round KASUMI‐like structure is pseudorandom under a non‐adaptive distinguisher model. 相似文献
127.
T.‐S. Kang B.S. Harrison M. Bouguettaya T.J. Foley J.M. Boncella K.S. Schanze J.R. Reynolds 《Advanced functional materials》2003,13(3):205-210
Near‐infrared‐emitting electroluminescent (EL) devices using blue‐light‐emitting polymers blended with the Yb complexes Yb(DBM)3phen (DBM = dibenzoylmethane), Yb(DNM)3phen (DNM = dinaphthoylmethane), and Yb(TPP)L(OEt) (L(OEt) = [(C5H5)Co{P(O)Et2}3]–) have been studied. EL devices composed of Yb(DNM)3phen blended with PPP‐OR11 showed enhanced near‐IR output at 977 nm when compared to those fabricated with Yb(DBM)3phen/PPP‐OR11 blends. The maximum near‐IR external efficiencies of the devices with Yb(DBM)3phen and Yb(DNM)3phen are, respectively, 7 × 10–5 (at 6 V and at 0.81 mA mm–2) and 4 × 10–4 (at 7 V, and 0.74 mA mm–2). The optimal blend composition for EL device performance consisted of PPP‐OR11 blended with 10–20 mol‐% Yb(DNM)3phen. A device fabricated using Yb‐(TPP)L(OEt)/PPP‐OR11 showed significantly enhanced near‐IR output efficiency, and future efforts will focus on devices fabricated using porphyrin‐based materials. 相似文献
128.
Preparation and characterisation of vanadium catalysts supported over alumina-pillared clays 总被引:1,自引:0,他引:1
M. A. Vicente C. Belver R. Trujillano M. A. Baares-Muoz V. Rives S. A. Korili A. Gil L. M. Gandía J. -F. Lambert 《Catalysis Today》2003,78(1-4):181-190
Supported vanadium-containing catalysts were prepared by impregnation of Al-pillared clays with NaVO3 precursor aqueous solutions. A montmorillonite and a saponite, both natural as well as previously pillared with Al13-Keggin polycations, were used as supports, being impregnated with solutions of the precursor by means of the incipient wetness technique. The layered structure of the supports is maintained after impregnation, and even after calcination of the impregnated solids at 500 °C, although with a significant worsening of the textural properties of the solids, in particular, a loss of specific surface area. Three crystalline vanadium-containing phases were identified in the impregnated solids, namely, NaV3O8, AlVO4 and V2O5 (shcherbinaite). The reduction of these phases to V3+ species was observed as wide processes in the 450–750 °C range, all of them centred at ca. 600 °C. 相似文献
129.
Seong Hyuk Lee Junghee Lee Kwan-Gu Kang Joon Sik Lee 《Journal of Mechanical Science and Technology》2006,20(8):1292-1301
This article investigates numerically the carrier-phonon interactions in thin gallium arsenide (GaAs) film structures irradiated
by subpicosecond laser pulses to figure out the role of several recombination processes on the energy transport during laser
pulses and to examine the effects of laser fluences and pulses on non-equilibrium energy transfer characteristics in thin
film structures. The self-consistent hydrodynamic equations derived from the Boltzmann transport equations are established
for carriers and two different types of phonons, i.e., acoustic phonons and longitudinal optical (LO) phonons. From the results,
it is found that the two-peak structure of carrier temperatures depends mainly on the pulse durations, laser fluences, and
nonradiative recombination processes, two different phonons are in nonequilibrium state within such lagging times, and this
lagging effect can be neglected for longer pulses. Finally, at the initial stage of laser irradiation, SRH recombination rates
increases sufficiently because the abrupt increase in carrier number density no longer permits Auger recombination to be activated.
For thin GaAs film structures, it is thus seen that Auger recombination is negligible even at high temperature during laser
irradiation. 相似文献
130.
Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and p-i-n diode models 总被引:1,自引:0,他引:1
Bryant A.T. Xiaosong Kang Santi E. Palmer P.R. Hudgins J.L. 《Power Electronics, IEEE Transactions on》2006,21(2):295-309
A practical and accurate parameter extraction method is presented for the Fourier-based-solution physics-based insulated gate bipolar transistor (IGBT) and power diode models. The goal is to obtain a model accurate enough to allow switching loss prediction under a variety of operating conditions. In the first step of the extraction procedure, only one simple clamped inductive load test is needed for the extraction of the six parameters required for the diode model and of the 12 and 15 parameters required for the nonpunch-through (NPT) and punch-through (PT) IGBT models, respectively. The second part of the extraction procedure is an automated formal optimization step that refines the parameter estimation. Validation with experimental results from various structures of IGBT demonstrates the accuracy of the proposed IGBT and diode models and the robustness of the parameter extraction method. 相似文献