1D selection of 2D objects in head-worn displays

In current desktop user interfaces, selection is usually accomplished easily with a mouse or a similar two-dimensional locator. In wearable computing, however, controlling two dimensions simultaneously gets significantly harder: a change in one dimension results easily in an undesired change in the other dimension as well when the user is occupied with a parallel task – such as walking. We present a way to overcome this problem by applying one-dimensional selection for graphical user interfaces in head-worn displays. Our new interaction technique allows a wearable computer user to perform object selection tasks easily and accurately. The technique is based on a visible circle on the screen. The user controls the circle, altering its radius with a one-dimensional valuator. The midpoint of the circle is in the middle of the screen. The object currently on the perimeter of the circle is highlighted and can be selected. Our preliminary usability evaluation, applying our custom evaluation method designed especially for walking users, indicates that the proposed technique is usable also when walking.     

Electronic Transport in Ultrathin Gold Films on Si(111)

The morphology and electronic transport of ultrathin Au films with thicknesses d = 1 ? 5 monolayers (ML) deposited on Si(111)7 × 7 surfaces is investigated by in situ scanning tunneling microscopy and electrical resistance measurements for temperatures T = 2 ? 300 K. With decreasing film thickness, i.e. decreasing sheet conductance G_s, a transition from a weakly conducting regime described by a logarithmic temperature dependence to an insulating regime occurs. In the insulating regime, the temperature dependence is described by G_s ∝ exp[?(T ₀ /T) ⁿ] with an exponent n which gradually changes from 0.69 to 1 with decreasing film thickness. In contrast, for the Si(111)6 × 6-Au reconstruction obtained after annealing, an exponent n = 1/2 is found suggesting the formation of a soft Coulomb gap due to electron-electron interaction. PACS numbers: 68.37.-d, 68.55.-a, 73.50.-h, 73.25.+i, 81.15.-z     

Data in Voice — In-Band Short Messaging Service (SMS) für den analogen Flugfunk

6. Zusammenfassung  In diesem Artikel wurde die Data in Voice-Technologie vorgestellt. DiV ist eine Methode, die es erlaubt, kurze Daten-Messages gemeinsam mit der Sprache im analogen Flugfunkkanal zu übertragen. Man ist bei FREQUENTIS überzeugt, dass man mit dieser Methode viele Nachteile des vorhandenen analogen Flugfunks beseitigen und dadurch die Flugsicherheit wesentlich erh?hen k?nnte.     

Mesa and planar SiGe-HBTs on MBE-wafers

SiGe-HBTs have the potential for outstanding analog and digital or mixed-signal high frequency circuits widely based on standard Si technology. Here we review on MBE grown transistors and circuits. Processes and results of a research-like SiGe HBT and two possible production relevant HBT versions are presented. The high frequency results with f_max and f_T up to 120 GHz and a minimum noise figure of 0.9 dB at 10 GHz demonstrate the advantage of using MBE samples with steep and high base doping and high germanium contents. A comparison to the concept of reported low doped, low germanium and triangular profiled SiGe base layers, realized by UHV-CVD, is given. In addition, some circuit demonstrators of SiGe-ICs will be presented.     

The High Field Project at Dresden/Rossendorf: A Pulsed 100 T/10 ms Laboratory at an Infrared Free-Electron-Laser Facility

This article describes the project to build a pulsed magnetic field user laboratory at the Forschungszentrum Rossendorf near Dresden. Using a 50 MJ/24 kV capacitor bank, pulsed fields and rise times of 100 T/10 ms, 70 T/100 ms, and 60 T/1 s should be achieved. The laboratory will be built next to a free-electron-laser-facility for the middle and far infrared (5 to 150 µm, 2 ps, cw). We describe the work which has been performed until now to start the construction of the laboratory in 2003: coil concepts and computer simulations, materials development for the high field coils, and design of the capacitor bank modules. In addition, a pilot laboratory has been set up where fields up to 62 T/15 ms have been obtained with a 1 MJ/10 kV capacitor module. It is used to gain experience in the operation of such a facility and to test various parts of it. In this test laboratory special devices have been developed for measurements of magnetization and magnetoresistance, and have been successfully used to investigate various materials including semiconductors and Heavy Fermion compounds. In particular, metamagnetic transitions in intermetallic compounds and the irreversibility field of a high-T _c superconductor have been determined. Shubnikov–de Haas oscillations have been observed in the semimetallic compound CeBiPt. Resistance relaxation has been observed to start less than 1second after the field pulse. It could be shown for the first time that nuclear magnetic resonance (NMR) is detectable in pulsed fields.