Maximum Likelihood Approach for RFID Tag Set Cardinality Estimation with Detection Errors

Estimation schemes of Radio Frequency IDentification (RFID) tag set cardinality are studied in this paper using Maximum Likelihood (ML) approach. We consider the estimation problem under the model of multiple independent reader sessions with detection errors due to unreliable radio communication links and/or collisions. In every reader session, both the detection error probability and the total number of tags are estimated. In particular, after the $R$ -th reader session, the number of tags detected in $j$ ( $j=1,2,...,R$ ) reader sessions out of $R$ sessions is updated, which we call observed evidence. Then, in order to maximize the likelihood function of the number of tags and the detection error probability given the observed evidences, we propose three different estimation methods depending on how to treat the discrete nature of the tag set cardinality. The performance of the proposed methods is evaluated under different system parameters and compared with that of the conventional method via computer simulations assuming flat Rayleigh fading environments and framed-slotted ALOHA based protocol.     

Quantitative coherent anti-Stokes Raman scattering microspectroscopy using a nanosecond supercontinuum light source

We describe and characterize a multiplex CARS microspectroscopic system that uses a nanosecond supercontinuum generated from a photonic crystal fiber and a sub-nanosecond pulse laser. This system has a high spectral resolution (<0.1 cm^?1) and an ultrabroadband spectral coverage (>2500 cm^?1). The estimated spatial resolutions are 0.45 μm (lateral) and 4.5 μm (axial), respectively. This system enables us to obtain CARS spectra and corresponding images in the fingerprint region as well in the CH stretch region. Using this system, we have successfully obtained label-free and multi-mode vibrational images of a yeast cell.     

Controlled levitation of bulk superconductors

Levitation of bulk Y-Ba-Cu-O superconductors could successfully be controlled using a Bi-Sr-Ca-Cu-O superconducting electromagnet. It was found that stable levitation without tilting was obtained only when the sample trapped a certain amount of field, the minimum of which depended on the external field and the sample dimensions. We also employed a novel analysis method for levitation based on the total energy balance, which is much simpler than the force method and could be applied to the understanding of general levitation behavior. Numerical analyzes thus developed suggested that stable levitation of superconductors with large dimensions can only be achieved when the induced currents can flow with three dimensional freedom     

Metal-Coated &lt;100&gt;-Cut GaAs Coupled to Tapered Parallel-Plate Waveguide for Cherenkov-Phase-Matched Terahertz Detection: Influence of Crystal Thickness

The influence of crystal thickness of metal-coated <100>-cut GaAs (M-G-M) on Cherenkov-phase-matched terahertz (THz) pulse detection was studied. The M-G-M detectors were utilized in conjunction with a metallic tapered parallel-plate waveguide (TPPWG). Polarization-sensitive measurements were carried out to exemplify the efficacy of GaAs in detecting transverse magnetic (TM)- and transverse electric (TE)-polarized THz waves. The reduction of GaAs’ thickness increased the THz amplitude spectra of the detected TM-polarized THz electro-optic (EO) signal due to enhanced electric field associated with a more tightly-focused and well-concentrated THz radiation on the thinner M-G-M. The higher-fluence THz beam coupled to the thinner M-G-M improved the integrated intensity of the detected THz amplitude spectrum. This trend was not observed for TE-polarized THz waves, wherein the integrated intensities were almost comparable. Nevertheless, good agreement of spectral line shapes of the superposed TM- and TE-polarized THz-EO signals with that of elliptically polarized THz-EO signal demonstrates excellent polarization-resolved detection capabilities of M-G-M via Cherenkov-phase-matched EO sampling technique.     

Oxygen doped Ge crystals Czochralski-grown from the B2O3-fully-covered melt

Local vibrations of oxygen in Ge crystals grown from a melt fully covered by B₂O₃ were evaluated by Fourier-transform infrared spectroscopy. Ge single crystals containing oxygen were grown by the Czochralski method under various growth conditions. Oxygen concentrations in the crystals were determined to be in the range between 8.5 × 10¹⁵ and 5.5 × 10¹⁷ cm⁻³ from the infrared absorption at 855 cm⁻¹ originating in local vibration of Ge-O_i-Ge quasi-molecules. Absorption peaks relating to GeO_x, SiO_x and Si-O_i-Si were not detected in the as-grown crystals. The calibration coefficient for determining oxygen concentration in Ge crystals from the absorption peak intensity at 1264 cm⁻¹ was estimated to be 1.15 × 10¹⁹ cm⁻².     

An active low-pass filter using two capacitive double-layer uniformly distributed RC lines

In this paper we propose an active circuit consisting of two capacitive double-layer uniformly distributed RC lines and an operational amplifier, and present conditions under which the circuit works as the low-pass filter. Furthermore, we present a method for designing the low-pass filter and give a design example where simulation results are included.     

Demonstration of 100 Gbps optical packet switching using header processor based on 48-bit longest prefix matching

Wire-rate packet processing and its energy saving for over 100 Gbps speed of line are major issues to be resolved in optical packet switching (OPS) networks. For that purpose, we newly develop a high-speed, deterministic-latency electronic header processor based on longest prefix matching (LPM) for searching optical packet destination addresses (OP-DAs). This paper reports the successful experimental results of electronic header processing based on LPM search of up to 48 bits and optical switching of 100 Gbps optical packets by the use of the header processor. We demonstrate 48-bit LPM-capable optical packet switching. We also demonstrate IP packet transfer and 32-bit LPM-capable optical packet switching. In the latter demonstration, the 32-bit OP-DA of optical packets is directly copied from the 32-bit destination address of Internet Protocol version 4 (IPv4) packets. This result indicates that OPS networks can be deployed with electronic IP networks by the use of integrated network operation between OPS and IP networks.     

Growth of (111) HgCdTe on (100) Si by MOVPE using metalorganic tellurium adsorption and annealing

(lll)B CdTe layers free of antiphase domains and twins were directly grown on (100) Si 4°-misoriented toward<011> substrates, using a metalorganic tellurium (Te) adsorption and annealing technique. Direct growth of (lll)B CdTe on (100) Si has three major problems: the etching of Si by Te, antiphase domains, and twinning. Te adsorption at low temperature avoids the etching effect and annealing at a high temperature grows single domain CdTe layers. Te atoms on the Si surface are arranged in two stable positions, depending on annealing temperatures. We evaluated the characteristics of (lll)B CdTe and (lll)B HgCdTe layers. The full width at half maximum (FWHM) of the x-ray double crystal rocking curve (DCRC) showed 146 arc sec at the 8 |im thick CdTe layers. In Hg_1−xCd_xJe (x = 0.22 to 0.24) layers, the FWHMs of the DCRCs were 127 arc sec for a 7 (im thick layer and 119 arc sec for a 17 (im thick layer. The etch pit densities of the HgCdTe were 2.3 x 106 cm2 at 7 ^m and 1.5 x 106 cm-2 at 17 um.     

Direct growth of CdTe on (100), (211), and (111) Si by metalorganic chemical vapor deposition

CdTe epilayers were grown directly on (100), (211), and (111) silicon substrates by metalorganic chemical vapor deposition (MOCVD). The crystallinity and the growth orientation of the CdTe film were dependent on the surface treatment of the Si substrate. The surface treatment consisted of exposure of the Si surface to diethyltelluride (DETe) at temperatures over 600°C prior to CdTe growth. Direct growth of CdTe on (100) Si produced polycrystalline films whereas (lll)B single crystals grew when Si was exposed to DETe prior to CdTe growth. On (211) Si, single crystal films with (133)A orientation was obtained when grown directly; but produced films with (211)A orientation when the Si surface was exposed to DETe. On the other hand, only (lll)A CdTe films were possible on (111) Si, both with and without Te source exposure, although twinning was increased after exposure. The results indicate that the exposure to a Te-source changes the initial growth stage significantly, except for the growth on (111) Si. We propose a model in which a Te atom replaces a Si atom that is bound to two Si atoms.     

A life-cycle analysis on thin-film CdS/CdTe PV modules

Authors have evaluated the life cycle of a thin-film CdS/CdTe PV module to estimate the energy payback time (EPT) and the life-cycle CO₂ emissions of a residential rooftop PV system using the CdS/CdTe PV modules. The primary energy requirement for producing 1 m² of the CdS/CdTe PV module was similar to a-Si PV module at annual production scale of 100 MW. EPT was calculated at 1.7–1.1 yr, which was much shorter than the lifetime of the PV system and similar to that of a-Si PV modules. The life-cycle CO₂ emissions were also estimated at 14–9 g-C/kWh, which was less than that of electricity generated by utility companies.