Microstructure and mechanical properties of silicon nitride-titanium nitride composites prepared by spark plasma sintering

Si₃N₄-TiN composites were prepared by spark plasma sintering (conventional sintering (SPS1) and in situ reaction sintering (SPS2)). Homogeneous distribution of equiaxed TiN grains in Si₃N₄ matrix results in the highest microhardness (21.7 GPa) and bending strength (621 MPa) of sample SPS1 sintered at 1550 °C. Dispersion of elongated TiN grains in Si₃N₄ matrix results in the highest fracture toughness (8.39 MPa m^1/2) of sample SPS2 sintered at 1300 °C.     

Dynamic culture substrate that captures a specific extracellular matrix protein in response to light

The development of methods for the off–on switching of immobilization or presentation of cell-adhesive peptides and proteins during cell culture is important because such surfaces are useful for the analysis of the dynamic processes of cell adhesion and migration. This paper describes a chemically functionalized gold substrate that captures a genetically tagged extracellular matrix protein in response to light. The substrate was composed of mixed self-assembled monolayers (SAMs) of three disulfide compounds containing (i) a photocleavable poly(ethylene glycol) (PEG), (ii) nitrilotriacetic acid (NTA) and (iii) hepta(ethylene glycol) (EG₇). Although the NTA group has an intrinsic high affinity for oligohistidine tag (His-tag) sequences in its Ni²⁺-ion complex, the interaction was suppressed by the steric hindrance of coexisting PEG on the substrate surface. Upon photoirradiation of the substrate to release the PEG chain from the surface, this interaction became possible and hence the protein was captured at the irradiated regions, while keeping the non-specific adsorption of non-His-tagged proteins blocked by the EG₇ underbrush. In this way, we selectively immobilized a His-tagged fibronectin fragment (FNIII_7–10) to the irradiated regions. In contrast, when bovine serum albumin—a major serum protein—was added as a non-His-tagged protein, the surface did not permit its capture, with or without irradiation. In agreement with these results, cells were selectively attached to the irradiated patterns only when a His-tagged FNIII_7-10 was added to the medium. These results indicate that the present method is useful for studying the cellular behavior on the specific extracellular matrix protein in cell-culturing environments.     

Controlled enhancement of spin-current emission by three-magnon splitting

Spin currents--the flow of angular momentum without the simultaneous transfer of electrical charge--play an enabling role in the field of spintronics. Unlike the charge current, the spin current is not a conservative quantity within the conduction carrier system. This is due to the presence of the spin-orbit interaction that couples the spin of the carriers to angular momentum in the lattice. This spin-lattice coupling acts also as the source of damping in magnetic materials, where the precessing magnetic moment experiences a torque towards its equilibrium orientation; the excess angular momentum in the magnetic subsystem flows into the lattice. Here we show that this flow can be reversed by the three-magnon splitting process and experimentally achieve the enhancement of the spin current emitted by the interacting spin waves. This mechanism triggers angular momentum transfer from the lattice to the magnetic subsystem and modifies the spin-current emission. The finding illustrates the importance of magnon-magnon interactions for developing spin-current based electronics.     

Continuous Band‐Filling Control and One‐Dimensional Transport in Metallic and Semiconducting Carbon Nanotube Tangled Films

Field‐effect transistors that employ an electrolyte in place of a gate dielectric layer can accumulate ultrahigh‐density carriers not only on a well‐defined channel (e.g., a two‐dimensional surface) but also on any irregularly shaped channel material. Here, on thin films of 95% pure metallic and semiconducting single‐walled carbon nanotubes (SWNTs), the Fermi level is continuously tuned over a very wide range, while their electronic transport and absorption spectra are simultaneously monitored. It is found that the conductivity of not only the semiconducting but also the metallic SWNT thin films steeply changes when the Fermi level reaches the edges of one‐dimensional subbands and that the conductivity is almost proportional to the number of subbands crossing the Fermi level, thereby exhibiting a one‐dimensional nature of transport even in a tangled network structure and at room temperature.     

Excess heat evolution from nanocomposite samples under exposure to hydrogen isotope gases

Anomalous heat effect by interaction of hydrogen isotope gas and metal nanocomposites supported by zirconia or by silica has been examined. Observed absorption and heat evolution at RT were not too large to be explained by some chemical processes. At elevated temperatures of 200–300 °C, most samples with binary metal nanocomposites produced excess power of 3–24 W lasting for up to several weeks. The excess power was observed not only in the D-Pd·Ni system but also in the HPd·Ni system and HCu·Ni system, while single-element nanoparticle samples produced no excess power. The Pd/Ni ratio is one of the keys to increase the excess power. The maximum phase-averaged excess heat energy exceeded 270 keV/D, and the integrated excess heat energy reached 100 MJ/mol-M or 90 MJ/mol-H. It is impossible to attribute the excess heat energy to any chemical reaction; it is possibly due to radiation-free nuclear process.     

Position-, size-, and shape-controlled highly crystalline ZnO nanostructures

Highly ordered ZnO nanoboxes and nanowire structures with a width of ～ 20 nm have been successfully fabricated by the combination of nanoimprint lithography and pulsed laser deposition utilizing a glancing angle deposition (GLAD) technique. The periodicity, size, and shape of the ZnO nanoboxes and nanobelts can be easily controlled over a large area by changing the molds and deposition conditions. At the initial stage of growth by GLAD, nanonucleation led to nanopillar structures, which agglomerated to form nanobox and nanobelt structures at room temperature (RT). The ZnO nanostructures have a c-axis orientation along the nanopillar direction after postannealing and exhibit an intense cathodoluminescence peak around 380 nm at RT.     

Understanding the change in electrical resistance of TiO2 thin film irradiated with YVO4 third-harmonic generation pulse laser

To selectively control the electrical resistance, thin films of TiO₂ were irradiated with a YVO₄ third-harmonic generation pulse laser in various power conditions. It was observed that when the laser power was less than 0.26 W, the electrical resistance of thin films decreased with the increase in laser power, whereas when the laser power was more than 0.26 W, the electrical resistance increased as the laser power increases. The minimum electrical resistance of the irradiated thin film was found to be four orders of magnitude lower than that of the unirradiated thin film. X-ray absorption fine structure analysis revealed that the valence of Ti ions in the thin films was reduced after laser irradiation, indicating the formation of oxygen vacancies with electron doping. The cross-sectional observation by a scanning electron microscope revealed that high laser power irradiation caused the thin films to become porous, and the percolation theory explains the origin of the increase in electrical resistance with developing porous structure. We propose a phase diagram to completely explain the relationship between electrical resistance and laser power, which supply a guideline on laser modification in TiO₂ electrical resistance.