Development of a fast neutron radiography converter using wavelength-shifting fibers

A fluorescent converter for fast neutron radiography (FNR) comprising a scintillator and hydrogen-rich resin has been developed and applied to electronic imaging. The rate of the reaction between fast neutrons and the converter is increased by thickening the converter, but its opaqueness attenuates emitted light photons before they reach its surface. To improve the luminosity of a fluorescent converter for FNR, a novel type of converter was designed in which wavelength-shifting fibers were adopted to transport radiated light to the observation end face. The performance of the converter was compared with that of a polypropylene-based fluorescent converter in an experiment conducted at the fast-neutron-source reactor YAYOI in the University of Tokyo.     

Direct observation of time-dependent space charge profiles in XLPEcable under high electric fields

Space charge distribution was measured, applying an electric field of >1 MV/cm to 3 mm thick XLPE cable insulation. Improving the conventional pulse electro-acoustic method, a new method was developed to measure space charge when applying HV to cables. Under high field, hetero charges were formed soon after voltage application, followed by an injection from the cathode. Then intermittent injections of charge packets from the anode took place. The space charge distribution kept changing without becoming stabilized. A simulation was done assuming hysteresis of the injection characteristics. The observed intermittent injection near the anode was qualitatively reproduced using computer simulation     

Al-Ba (aluminum-barium)

This work was supported by ASM International. Literature searched through 1987. Dr. Okamoto is the Alloy Phase Diagram Program Category Editor for miscellaneos binary alloys.     

Numerical analysis of short-circuit safe operating area forp-channel and n-channel IGBTs

The mechanisms of destructive failure of an insulated gate bipolar transistor (IGBT) at short-circuit state are discussed. Results from two-dimensional numerical simulation of p-channel and n-channel IGBTs are presented. It is found that there are two types of destructive failure mechanisms: a secondary breakdown and a latchup. Which type is dominant in p-channel and n-channel IGBTs depends on an absolute value of forward voltage |V_CE|. At moderately low |V _CE|, the p-channel IGBT is destroyed by secondary breakdown, and the n-channel IGBT, by latchup. This is due to the difference of a type of flowing carrier crossing a base-collector junction of wide base transistor and ionization rates of electrons and holes