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991.
Wenbo Wu Duo Mao Shidang Xu Majid Panahandeh‐Fard Yukun Duan Fang Hu Deling Kong Bin Liu 《Advanced functional materials》2019,29(42)
Owing to efficient singlet oxygen (1O2) generation in aggregate state, photosensitizers (PSs) with aggregation‐induced emission (AIE) have attracted much research interests in photodynamic therapy (PDT). In addition to high 1O2 generation efficiency, strong molar absorption in long‐wavelength range and near‐infrared (NIR) emission are also highly desirable, but difficult to achieve for AIE PSs since the twisted structures in AIE moieties usually lead to absorption and emission in short‐wavelength range. In this contribution, through acceptor engineering, a new AIE PS of TBT is designed to show aggregation‐induced NIR emission centered at 810 nm, broad absorption in the range between 300 and 700 nm with a large molar absorption coefficient and a high 1O2 generation efficiency under white light irradiation. Further, donor engineering by attaching two branched flexible chains to TBT yielded TBTC8 , which circumvented the strong intermolecular interactions of TBT in nanoparticles (NPs), yielding TBTC8 NPs with optimized overall performance in 1O2 generation, absorption, and emission. Subsequent PDT results in both in vitro and in vivo studies indicate that TBTC8 NPs are promising candidates in practical application. 相似文献
992.
We observed and analyzed the acid and HEBUT alkaline of Cu chemical mechanical polishing(CMP)slurry to evaluate their effects. Material analysis has shown that the planarity surfaces and the removal rate of alkaline slurry are better than the acid slurry during metal CMP processes. The global surface roughness and the small-scale surface roughness by 1010 m2 of copper film polished by the SVTC slurry are 1.127 nm and2.49 nm. However, it is found that the surface roughnesses of copper films polished by the HEBUT slurry are 0.728 nm and 0.215 nm. All other things being equal, the remaining step heights of copper films polished by the SVTC slurry and HEBUT slurry are respectively 150 nm and 50 nm. At the end of the polishing process, the dishing heights of the HEBUT slurry and the SVTC slurry are approximately both 30 nm, the erosion heights of the HEBUT slurry and the SVTC slurry are approximately both 20 nm. The surface states of the copper film after CMP are tested,and the AFM results of two samples are obviously seen. The surface polished by SVTC slurry shows many spikes.This indicates that the HEBUT alkaline slurry is promising for inter-level dielectric(ILD) applications in ultra large-scale integrated circuits(ULSI) technology. 相似文献
993.
光散射粒度测量中Mie理论的高精度算法 总被引:9,自引:0,他引:9
本文在以往计算Mie散射计算的基础上提出一种新的算法。本算法区别于传统的递推算法,精度高、计算范围广。文中推导了该算法的公式,分析了递推公式的不稳定性和应用上的局限性,并指出了本算法的优势。最后给出了部分计算结果并与已发布数据进行了比较。本算法适用的颗粒当量直径为1e5 ̄1e+5,折射率虚部0 ̄1e+5。 相似文献
994.
995.
996.
基于数字叠栅移相干涉原理,分析了CCD像元尺寸、随机噪声和量化误差对采样后干涉条纹和合成叠栅条纹对比度的影响,并就干涉条纹频率对叠栅移相干涉相位测量精度的影响进行了理论分析和仿真研究。结果表明,随着干涉条纹空间频率的增大,CCD的采样过程、随机噪声和量化噪声会影响叠栅条纹信号的对比度和信噪比,并通过相位解算过程直接影响数字叠栅移相干涉的相位测量精度。以相位测量精度为π/50(折合光程差精度为λ/100)作为判断标准,对应可探测干涉条纹的最大空间频率为0.45λ/pixel,为后续数字叠栅移相干涉测量范围的研究提供了定量理论依据。 相似文献
997.
Zhiyuan Hu Zhangli Liu Hua Shao Bingxu Ning Ming Chen Dawei Bi Shichang Zou 《Microelectronics Reliability》2011,51(8):1295-1301
The response of single flash cell in a 180-nm flash technology to total ionizing dose (TID) is studied. The results indicate that the erased cell flips at a dose level of 100 krad(Si), whereas the programmed cell does not even at the dose level up to 1 Mrad(Si). This asymmetric phenomenon is attributed to the difference between the reference current of the comparator circuit and the intrinsic current of the flash cell. For the first time, we show that the irradiation-induced flash cell drain-current variation does not saturate at the intrinsic value, i.e. the drain current of a device with neutrally charged floating gate. After degrading to the intrinsic state, the read current of the erased cell gradually increases while the programmed cell continues to increase and then slightly drops back. Radiation tolerance comparison of single flash cell, I/O transistors and high-voltage (HV) transistors demonstrates that HV NMOS is most susceptible to ionizing radiation. The radiation tolerance of the circuit level is also evaluated from the elementary devices. 相似文献
998.
针对静默哨兵系统等隐身雷达的战场机动能力不足,提出了一种便携式无源侦察系统的设计方法.通过三点布站对目标测距定位,对信号作相关处理提高侦测距离,用时域遍历代替相控天线在空域遍历实现多目标功能.方法简洁、造价低廉,对构建国土和城市重点防御有一定参考价值. 相似文献
999.
1000.