Decision support aids with anthropomorphic characteristics influence trust and performance in younger and older adults

This study examined the use of deliberately anthropomorphic automation on younger and older adults' trust, dependence and performance on a diabetes decision-making task. Research with anthropomorphic interface agents has shown mixed effects in judgments of preferences but has rarely examined effects on performance. Meanwhile, research in automation has shown some forms of anthropomorphism (e.g. etiquette) have effects on trust and dependence on automation. Participants answered diabetes questions with no-aid, a non-anthropomorphic aid or an anthropomorphised aid. Trust and dependence in the aid was measured. A minimally anthropomorphic aide primarily affected younger adults' trust in the aid. Dependence, however, for both age groups was influenced by the anthropomorphic aid. Automation that deliberately embodies person-like characteristics can influence trust and dependence on reasonably reliable automation. However, further research is necessary to better understand the specific aspects of the aid that affect different age groups. Automation that embodies human-like characteristics may be useful in situations where there is under-utilisation of reasonably reliable aids by enhancing trust and dependence in that aid. Practitioner Summary: The design of decision-support aids on consumer devices (e.g. smartphones) may influence the level of trust that users place in that system and their amount of use. This study is the first step in articulating how the design of aids may influence user's trust and use of such systems.     

In Vitro hydrodynamic evaluation of prosthetic polymer heart valves in steady flow

Hydrodynamic comparison of two polymer valves with two mechanical valves is presented. The valves were perfused in a steady flow system, and comparisons between the valves were made on the transvalvular pressure distribution and drop, opening area, and leakage volume. Particular emphasis was placed on a slit-type bileaflet polymer valve which was newly designed and fabricated in our research group. The results showed that the functional characteristics of a slit-type bileaflet polymer valve compared favorably with that of mechanical valves. This valve may be a viable and inexpensive alternative, especially for short-term use in TAH or VAD systems.     

FVF LDO regulator with dual dynamic-load composite gain stage

A low-voltage output-capacitorless low-dropout regulator using dual dynamic-load composite gain stage for flipped voltage follower topology is presented. It also incorporates a delay discharge circuit which aims to reduce the long discharge time arising from the large capacitive load, thus achieving the overshoot time reduction and sustaining fast transient characteristic when driving low-power digital system with internal heavy capacitive load requirement. The regulator can support a minimum of 0.75 V input voltage with 0.5 V output voltage. It consumes 49.4 µA whilst maintaining the stability for a capacitance load range from 470 pF to 10 nF. For a current load transient from 0 to 10 mA with 200 ps edge time, the settling time is 0.38 µs for the load capacitance of 3 nF. The obtained transient figure-of-merit is 0.42 mV. This transient metric outperforms the representative prior-art reported works.     

Aptamer‐Functionalized Multidimensional Conducting‐Polymer Nanoparticles for an Ultrasensitive and Selective Field‐Effect‐Transistor Endocrine‐Disruptor Sensors

An endocrine disruptor (ED) is a type of xenobiotic compound that can cause serious diseases related to the estrous cycle, as well as various types of cancer. At low ED concentrations, estrogen receptors may respond as they would under physiological conditions. In this work, aptamer‐functionalized multidimensional conducting‐polymer (3‐carboxylate polypyrrole) nanoparticles (A_M_CPPyNPs) are fabricated for use in an FET sensor to detect bisphenol A (BPA). The multidimensional system, M_CPPyNPs, is first produced by means of dual‐nozzle electrospray of pristine CPPyNPs and vapor deposition polymerization of additional conducting polymer. The M_CPPyNPs are then immobilized on an amine‐functionalized (–NH₂) interdigitated‐array electrode substrate, through the formation of covalent bonds with amide groups (–CONH). The amine‐functionalized BPA‐binding aptamer is then introduced in the same way as that for M_CPPyNP immobilization. The resulting A_M_CPPyNP‐based FET sensors exhibit ultrasensitivity and selectivity towards BPA at unprecedentedly low concentrations (1 fm ) and among molecules with similar structures. Additionally, due to the covalent bonding involved in the immobilization processes, a longer lifetime is expected for the FET sensor.     

Effect of different chemical treatments of surface on the height of Al-<Emphasis Type=Italic>p</Emphasis>-SiGe and Au-<Emphasis Type=Italic>n</Emphasis>-SiGe barriers

The effect of different chemical treatments on the properties of Au-n-SiGe and Al-p-SiGe Schottky barriers has been investigated. Etching under different conditions was used to prepare surfaces with different densities of surface states (D _ss). It is shown that the barrier height in the structures under study correlates with the D _ss value and germanium content in the Si_{1 − x} Ge _x alloy.     

Modeling and measurement of simultaneous switching noise coupling through signal via transition

The signal via is a heavily utilized interconnection structure in high-density System-on-Package (SoP) substrates and printed circuit boards (PCBs). Vias facilitate complicated routings in these multilayer structures. Significant simultaneous switching noise (SSN) coupling occurs through the signal via transition when the signal via suffers return current interruption caused by reference plane exchange. The coupled SSN decreases noise and timing margins of digital and analog circuits, resulting in reduction of achievable jitter performance, bit error ratio (BER), and system reliability. We introduce a modeling method to estimate SSN coupling based on a balanced transmission line matrix (TLM) method. The proposed modeling method is successfully verified by a series of time-domain and frequency-domain measurements of several via transition structures. First, it is clearly verified that SSN coupling causes considerable clock waveform distortion, increases jitter and noise, and reduces margins in pseudorandom bit sequence (PRBS) eye patterns. We also note that the major frequency spectrum component of the coupled noise is one of the plane pair resonance frequencies in the PCB power/ground pair. Furthermore, we demonstrate that the amount of SSN noise coupling is strongly dependent not only on the position of the signal via, but also on the layer configuration of the multilayer PCB. Finally, we have successfully proposed and confirmed a design methodology to minimize the SSN coupling based on an optimal via positioning approach.     

A Surface Tailoring Method of Ultrathin Polymer Gate Dielectrics for Organic Transistors: Improved Device Performance and the Thermal Stability Thereof

Tailoring the surface of the dielectric layer is of critical importance to form a good interface with the following channel layer for organic thin film transistors (OTFTs). Here, a simple surface treatment method is applied onto an ultrathin (<15 nm) organosilicon‐based dielectric layer via the initiated chemical vapor deposition (iCVD) to make it compatible with organic semiconductors without degrading its insulating property. A molecular‐thin oxide capping layer is formed on a 15 nm thick poly(1,3,5‐trimetyl‐1,3,5‐trivinyl cyclotrisiloxane) (pV3D3) by a brief oxygen plasma treatment. The capping layer greatly enhances the thermal stability of the dielectrics, without degrading the original mechanical flexibility and insulating performance of the dielectrics. Moreover, the surface silanol functionalities formed by the plasma treatment can also be utilized for the surface modification with silane compounds. The surface‐modified dielectrics are applied to fabricate low‐voltage operating (<5 V) pentacene‐based OTFTs. The highest field‐effect mobility of the device with the surface‐treated 15 nm thick pV3D3 is 0.59 cm² V^?1 s^?1, which is improved up to two times compared to the TFT with the pristine pV3D3. It is believed that the simple surface treatment method can widely extend the applicability of the highly robust, ultrathin, and flexible pV3D3 gate dielectrics to design the surface of the dielectrics to match well various kinds of organic semiconductors.