Hydride Vapor Phase Epitaxy of GaN Thick Films by the Consecutive Deposition Process Using GaCl3

GaN buffer and main layers were grown by the conventional hydride vapor phase epitaxy technique using GaCl₃ consecutively. The deposited buffer layers were investigated by atomic force microscopy and X-ray analysis. To examine the behavior of the buffer layers at main layer growth temperature, heat treatment was conducted at 900°C. Based on the results of the buffer layer study, GaN thick films were grown at 1050°C. Optimum deposition conditions of buffer layer from the buffer and main layer studies generally coincided. On the φ scanning pattern, the GaN films grown on (0001) Al₂O₃ were single-crystalline. Band-edge emission dominated photoluminescence was observed at room temperature.     

Electrical characterization of porous BaTiO3 using impedance spectroscopy in humid condition

The humidity response characteristics of La doped BaTiO₃ with different sintered densities and room temperature electrical conductivities were investigated using complex impedance measurement. The samples with low density and high resistivity showed the large and nearly linear sensitivity to the change of humidity. The impedance spectra of samples, when exposed to high humidity, can exhibit microstructure-related features, even though they do not give rise to a noticeable characteristic change when exposed to low humidity. The observed impedance patterns were dependent upon the density, and hence the oxidation kinetics of BaTiO₃.     

提高K-9曲拐质量的热处理工艺

K-9曲拐质量不合格主要是由于热处理后，珠光体数量太少所引起。因此应用正交试验，合理地选择了热处理工艺参数，提高了出炉温度，增加了珠光体数量，解决了K-9曲拐的质量问题。     

Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors

In this paper, the detectivity is calculated and analyzed with the front-or backside illuminated case for both N-GaSb/p₂-Ga_0.8In_0.2As_0.19Sb_0.81/p₁-Ga_0.9In_0.1As_0.09Sb_0.91 and N₁-GaSb/n₂-Ga_0.9In_0.1As_0.09Sb_0.91/p-Ga_0.8In_0.2As_0.19Sb_0.81 infrared photovoltaic detectors, respectively. The analysis results show that the main absorption appears in the p-type Ga_0.8In_0.2As_0.19Sb_0.81 material with either front- or backside illuminated case for above two structures. In each structure, the carrier concentration obviously affects the detectivity. The carrier concentration in the wide-bandgap material for the isotype heterojunction should be reduced as low as possible to reduce the tunneling rate at the isotype heterointerface. Moreover, the change of the detectivity with the p-side surface recombination velocity for the N₁-n₂-p structure is more sensitive than that with the p₁-side surface recombination velocity for the N-p₂-p₁ structure. In the N-p₂-p₁ structure with the incident light from the p₁-side surface, two-color detection is achieved.     

Analysis and observation of backscatter-induced crosstalk in a 2-DFDM fiber gyro system

The modulation characteristics of first-order backscatter-induced crosstalk noise in a 2-D frequency-division-multiplexed fiber gyro system are analyzed and experimental results presented. The noise can be reduced from 5°/h to 0.2°/h (0.25 NEB) by proper choice of modulation depth and/or frequency     

镁合金表面喷铝防腐蚀层的微观组织分析

在AZ91D镁合金表面热喷铝，用以提高其表面的耐腐蚀性能。采用SEM，EPMA等方法对AZ91D表面喷铝扩散层的组织进行了仔细的观察与分析，发现在防腐蚀层上有大量的Mg17Al12相存在，且呈决状及非连续片状分布。经显微硬度测定，喷铝层硬度较镁合金基体高；腐蚀后这种相凸出于基体，比镁合金基体有较好的耐腐蚀性能。     

重点建设工程档案管理工作探讨

针对重点建设工程档案的管理现状,提出了明确岗位责任、加强制度建设以及夯实基础工作的档案管理理念。     

A knowledge-based system for sensor selection

This paper presents a Knowledge-based system (KBS) developed to allow users, who may not be knowledgeable about sensors, to select sensors suitable for their specific needs. The KBS runs on a micro-computer. The selection criteria are user specified and are based on the desired measurement parameters. The system output includes all of the operational and dimensional parameters of the recommended sensor, price, and vendor information.     

环境资源负外部性与产权理论的新进展

环境资源共有产权的特性使得社会成员只能通过自身感知和理解确定对环境资源的产权边界，并且产权的实施是非排他的，所以与环境资源有关的负外部性较其他具有直接因果关系的外部性特殊。在治理这类负外部性的过程中，产权理论也有了新的发展。本文从分析环境资源产权的特殊性入手，对于产权弱化、产权分割、创建新产权和自愿合作基础上认知产权调整等负外部性内部化理论进行了分析。     

应用10mm薄板铸锭制备的NdFeB烧结磁体

NdFeB薄板铸锭具有晶粒细，富钕相分布均匀及在稀土含量较低时可以防止α－Fe相出现的特点，是一种适合制备高性能烧磁体的合金铸锭，本文介绍了一种用10mm薄板铸锭和球磨制粉方法制备烧结磁体的工艺，在设备要求较低的情况下制备得到了Br=1.37T,(BH)max=320kJ/m^3(40MGOe)的烧结磁体，同时比较了使用常规铸锭和常规工艺的结果，强调了氢爆法在该工艺中的重要作用，最后对该工艺的改进方向和10mm铸锭的应用前景进行了阐述。