Preparation, patterning and luminescent properties of nanocrystalline Gd2O3:A (A=Eu, Dy, Sm, Er) phosphor films via Pechini sol–gel soft lithography

Nanocrystalline Gd₂O₃:A (A=Eu³⁺, Dy³⁺, Sm³⁺, Er³⁺) phosphor films and their patterning were fabricated by a Pechini sol–gel process combined with a soft lithography. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and optical microscopy, UV/vis transmission and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 500 °C and that the crystallinity increased with the elevation of annealing temperatures. Uniform and crack free non-patterned phosphor films were obtained by optimizing the composition of the coating sol, which mainly consisted of grains with an average size of 70 nm and a thickness of 550 nm. Using micro-molding in capillaries technique, we obtained homogeneous and defects-free patterned gel and crystalline phosphor films with different stripe widths (5, 10, 20 and 50 μm). Significant shrinkage (50%) was observed in the patterned films during the heat treatment process. The doped rare earth ions (A) showed their characteristic emission in crystalline Gd₂O₃ phosphor films due to an efficient energy transfer from Gd₂O₃ host to them. Both the lifetimes and PL intensity of the rare earth ions increased with increasing the annealing temperature from 500 to 900 °C, and the optimum concentrations for Eu³⁺, Dy³⁺, Sm³⁺, Er³⁺ were determined to be 5, 0.25, 1 and 1.5 mol% of Gd³⁺ in Gd₂O₃ films, respectively.     

地震平衡技术及其在地震反演中的应用

地震平衡技术是一种在地震反演中改善井震关系的新技术。它通过单井对比、空间分形建模以及平衡处理的手段 ,克服地震反演中子波空变的影响 ,使得经过地震平衡技术处理的地震剖面井震关系得到较好改善 ,从而可以用统一的子波对研究区的地震资料进行反演     

从稳态到动态的空气调节

分析传统空调所提供的稳态参数微气候环境不一定能达到人的舒适和健康的要求,提出符合人本身生理习惯的空调送风方式应该是动态空气调节.认为个人可调节和适宜的环境渐变能同时保证舒适和健康两方面需要.     

晶须取向对SiCw/6061Al复合材料热压缩变形行为的影响

采用SEM 和 Magiscan-2A 图像分析系统研究了晶须取向对SiCw/6061Al复合材料在300℃压缩变形行为的影响.结果表明:晶须取向影响着晶须折断程度和转动角度; 随着晶须取向角的增加,晶须转动和折断行为所导致的软化效果下降.同时晶须取向也影响复合材料的热压缩应力-应变曲线的形状.在热压缩变形过程中,晶须取向角为0°和30°的复合材料表现出明显应变软化现象, 晶须取向角为45°的复合材料无明显软化现象.晶须取向角为90℃的复合材料表现出应变硬化现象.     

协同作战能力简析

协同作战能力(CEC)是一种充分利用网络技术的新型海岸防空技术，给系统的作战能力带来了革命性的交破。本文对协同作战能力的产生、功能、组成以及未来的发展趋势作了详细的介绍，阐述了CEC系统的总体设计思想。在此基础上，将CEC系统与传统的作战系统的性能和设计思想在各方面进行了比较，交出了CEC系统各方面的优越性能。协同作战能力是现代和未来作战系统的发展方向，CEC系统的发展必将成为衡量各国国防科技现代化的重要指标。     

Data-efficient blind OFDM channel estimation using receiver diversity

We investigate non data-aided channel estimation for cyclically prefixed orthogonal frequency division multiplexing (OFDM) systems. By exploiting channel diversity using only two receive antennas, a blind deterministic algorithm is proposed. Identifiability conditions are derived that guarantee the perfect channel retrieval in the absence of noise. In the presence of noise, the proposed method has the desired property of being data efficient-only a single OFDM block is needed to achieve good estimation performance for a wide range of SNR values. The algorithm is also robust to input symbols as it does not have any restriction on the input symbols with regard to their constellation or their statistical properties. In addition, this diversity-based algorithm is computationally efficient, and its performance compares favorably to most existing blind algorithms.     

RFA—300型自动分析仪检测总植物碱的改进

对连续流动法测定烟草及烟草制品中总植物碱的各影响因素进行了试验研究,并根据试验结果对仪器管路进行相应的改造。实验结果表明,烟草制品中总植物碱的连续流动法测定,改进后方法的回收收率高、重现性好。     

优化项目管理MIS系统方案设计

按照工程项目“五制”管理的要求 ,以规范管理和提升工程质量为系统开发的基础和前提 ,探索适合本行业使用的项目MIS系统设计方案 ,并对其功能模型、数据规划、构造处理模型、数学模型进行分析     

基于ERP系统的电子商务平台的分析

提出了利用DNA和XML技术构建基于ERP系统的电子商务平台的解决方案，并且给出了数据接口的几种实现方式。     

Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.