全文获取类型
收费全文 | 8440篇 |
免费 | 831篇 |
国内免费 | 350篇 |
专业分类
电工技术 | 558篇 |
综合类 | 497篇 |
化学工业 | 1478篇 |
金属工艺 | 411篇 |
机械仪表 | 461篇 |
建筑科学 | 539篇 |
矿业工程 | 186篇 |
能源动力 | 335篇 |
轻工业 | 793篇 |
水利工程 | 142篇 |
石油天然气 | 363篇 |
武器工业 | 64篇 |
无线电 | 1076篇 |
一般工业技术 | 1233篇 |
冶金工业 | 322篇 |
原子能技术 | 112篇 |
自动化技术 | 1051篇 |
出版年
2024年 | 21篇 |
2023年 | 108篇 |
2022年 | 229篇 |
2021年 | 324篇 |
2020年 | 257篇 |
2019年 | 256篇 |
2018年 | 245篇 |
2017年 | 273篇 |
2016年 | 300篇 |
2015年 | 311篇 |
2014年 | 495篇 |
2013年 | 547篇 |
2012年 | 572篇 |
2011年 | 664篇 |
2010年 | 596篇 |
2009年 | 508篇 |
2008年 | 504篇 |
2007年 | 465篇 |
2006年 | 391篇 |
2005年 | 407篇 |
2004年 | 270篇 |
2003年 | 271篇 |
2002年 | 287篇 |
2001年 | 273篇 |
2000年 | 189篇 |
1999年 | 164篇 |
1998年 | 128篇 |
1997年 | 105篇 |
1996年 | 67篇 |
1995年 | 80篇 |
1994年 | 63篇 |
1993年 | 51篇 |
1992年 | 42篇 |
1991年 | 24篇 |
1990年 | 23篇 |
1989年 | 21篇 |
1988年 | 12篇 |
1987年 | 6篇 |
1986年 | 3篇 |
1985年 | 4篇 |
1984年 | 10篇 |
1983年 | 9篇 |
1982年 | 7篇 |
1981年 | 12篇 |
1980年 | 5篇 |
1979年 | 3篇 |
1978年 | 3篇 |
1975年 | 3篇 |
1973年 | 3篇 |
1970年 | 2篇 |
排序方式: 共有9621条查询结果,搜索用时 15 毫秒
91.
Heon-Bok Lee Hyun Jeong Yang Ju Hyung We Kukjoo Kim Kyung Cheol Choi Byung Jin Cho 《Journal of Electronic Materials》2011,40(5):615-619
A new process for fabricating a low-cost thermoelectric module using a screen-printing method has been developed. Thermoelectric
properties of screen-printed ZnSb films were investigated in an effort to develop a thermoelectric module with low cost per
watt. The screen-printed Zn
x
Sb1−x
films showed a low carrier concentration and high Seebeck coefficient when x was in the range of 0.5 to 0.57 and the annealing temperature was kept below 550°C. When the annealing temperature was higher
than 550°C, the carrier concentration of the Zn
x
Sb1−x
films reached that of a metal, leading to a decrease of the Seebeck coefficient. In the present experiment, the optimized
carrier concentration of screen-printed ZnSb was 7 × 1018/cm3. The output voltage and power density of the ZnSb film were 10 mV and 0.17 mW/cm2, respectively, at ΔT = 50 K. A thermoelectric module was produced using the proposed screen-printing approach with ZnSb and CoSb3 as p-type and n-type thermoelectric materials, respectively, and copper as the pad metal. 相似文献
92.
前向安全的密码体制可以有效地降低密钥泄露对安全性的影响。利用刘亚丽等人提出的方法[2],对张波等人提出的强前向安全的代理签名方案(Zhang方案)[1]进行分析,指出该方案既不满足后向安全性,也不满足前向安全性。基于以上分析结果,对Zhang方案进行改进,设计出一个前向安全的代理签名方案,安全性分析表明,改进方案是一个真正前向安全的代理签名方案。 相似文献
93.
Saehoon Ju Hyeongdong Kim Hyung-Hoon Kim 《Microwave and Wireless Components Letters, IEEE》2003,13(9):405-407
This letter presents a numerical dispersion relation for the two-dimensional (2-D) finite-difference time-domain method based on the alternating-direction implicit time-marching scheme (2-D ADI-FDTD). The proposed analytical relation for 2-D ADI-FDTD is compared with those relations in the previous works. Through numerical tests, the dispersion equation of this work was shown as correct one for 2-D ADI-FDTD. 相似文献
94.
Sunggon Kim Ju Yong Lee Dan Keun Sung 《Communications Letters, IEEE》2003,7(3):124-126
It is important to characterize the distributional property and the correlation structure of traffic arrival processes in modeling internet traffic. The conventional fractional Gaussian noise (fGn) model fails in characterizing the distributional property when the distribution of the input traffic rates is nongaussian. We propose a shifted gamma distribution model which can solve this problem. A linear-time generation algorithm is also given. 相似文献
95.
96.
97.
Kee Soo Nam Ju Wook Lee Sang-Gi Kim Tae Moon Roh Hoon Soo Park Jin Gun Koo Kyung Ik Cho 《Electron Device Letters, IEEE》2000,21(7):365-367
A novel simplified fabrication method of a very high density p-channel trench gate power MOSFET using four mask layers and nitride/TEOS sidewall spacers is realized. The proposed process showed improved on-resistance characteristics of the device with increasing cell density and the cost-effective production capability due to the lesser number of processing steps. By using this process technique, a remarkably increased high density (100 Mcell/inch2) trench gate power MOSFET with a cell pitch of 2.5 μm could be effectively realized. The fabricated device had a low specific on-resistance of 1.1 mΩ-cm2 with a breakdown voltage of -36 V 相似文献
98.
Yanhao Dong Hongbing Yang Lin Zhang Xingyu Li Dong Ding Xiaohui Wang Ju Li Jiangong Li I-Wei Chen 《Advanced functional materials》2021,31(1):2007750
Nanocrystalline materials with superior properties are of great interest. Much is discussed about obtaining nanograins, but little is known about maintaining grain-size uniformity that is critical for reliability. An especially intriguing question is whether it is possible to achieve a size distribution narrower than what Hillert theoretically predicted for normal grain growth, a possibility suggested—for growth with a higher growth exponent—by the generalized mean-field theory of Lifshitz, Slyozov, Wagner (LSW), and Hillert but never realized in practice. Following a rationally designed two-step sintering route, it has been made possible in bulk materials by taking advantage of the large growth exponent in the intermediate sintering stage to form a uniform microstructure despite residual porosity, and freezing the grain growth thereafter while continuing densification to reach full density. The bulk dense Al2O3 ceramic thus obtained has an average grain size of 34 nm and a size distribution much narrower than Hillert's prediction. Bulk Al2O3 with a grain-size distribution narrower than the particle-size distribution of starting powders is also demonstrated, as are highly uniform bulk engineering metals (refractory Mo and W-Re alloy) and complex functional ceramics (BaTiO3-based alloys with superior dielectric strength and energy capacity). 相似文献
99.
Energy Harvesting: High‐Performance Piezoelectric,Pyroelectric, and Triboelectric Nanogenerators Based on P(VDF‐TrFE) with Controlled Crystallinity and Dipole Alignment (Adv. Funct. Mater. 22/2017) 下载免费PDF全文
100.
A power efficient System-on-a-Chip test data compression method using alternating statistical run-length coding is proposed. To effectively reduce test power dissipation, the test set is firstly preprocessed by 2D reordering scheme. To further improve the compression ratio, 4 m partitioning of the runs and a smart filling of the don’t care bits provide the nice results, and alternating statistical run-length coding scheme is developed to encode the preprocessed test set. In addition, a simple decoder is obtained which consumed a little area overhead. The benchmark circuits verify the proposed power efficient coding method well. Experimental results show it obtains a high compression ratio, low scan-in test power dissipation and little extra area overhead during System-on-a-Chip scan testing. 相似文献