New protection method for HVDC lines including cables

For the third project of the Hokkaido-Honshu HVDC Link in Japan, called the HVDC Link III project (rated at 250 kVDC-1200 A-300 MW), we developed an HVDC transmission line protection method based on a new working principle that allows high-speed and highly sensitive detection of faults, enhancing reliability in the supply of electric power. In general, increasing the sensitivity of relays will lead to an increased likelihood of undesired operation whereas lowering the sensitivity will impair the responsiveness of the relays. Our proposed method meets these apparently incompatible requirements very well. Basically classified as a differential scheme, the HVDC transmission line protection method compensates for a charging and discharging current that flows through the line-to-ground capacitance at times of voltage variations caused by a line fault or by the operation of DC power systems. The developed protection method is also characterized in that it uses current changes induced by voltage variations to restrain the operation of a relay. This configuration has made the proposed method far superior in responsiveness and sensitivity to the conventional protection method. A simulation using an EMTP (Electro-Magnetic Transients Program) was conducted on this method. Developed relay equipment embodying the new protection method was subjected to various verification tests, where this equipment was connected to a power system simulator, before being delivered to the HVDC Link III facility     

Expression of V642 APP mutant causes cellular apoptosis as Alzheimer trait-linked phenotype

APP is a transmembrane precursor of beta-amyloid. In dominantly inherited familial Alzheimer's disease (FAD), point mutations V6421, V642F and V642G have been discovered in APP695. Here we show that expression of these mutants (FAD-APPs) causes a clone of COS cells to undergo apoptosis associated with DNA fragmentation. Apoptosis by the three FAD-APPs was the highest among all possible V642 mutants; normal APP695 had no effect on apoptosis, suggesting that apoptosis by APP mutants in this system is phenotypically linked to the FAD trait. FAD-APP-induced apoptosis was sensitive to bcl-2 and most probably mediated by heteromeric G proteins. This study presents a model system allowing analysis of the mechanism for FAD-APP-induced cytotoxicity.     

Hot-carrier effects in scaled MOS devices

A universal guideline and state-of-the-art hot-carrier effects in scaled MOSFETs are reviewed and discussed from the viewpoints of 1) DC and AC hot-carrier effects, 2) hot-carrier detrapping phenomena, 3) mechanical stress effects on hot-carrier phenomena, and 4) hot-carrier resistant device structures.In the deep-submicron region, the hot-carrier applicable voltage is less than 3 V, so AC hot-carrier effects from the dynamic operation of actual circuits should be taken into account. Despite much experimentation and analysis, there is still no universally accepted theory that explain the AC degradation mechanism. This is because the noise caused by the wiring inductance in ULSI circuits and in measurement systems screens the intrinsic AC hot-carrier effects.Here, AC hot-carrier degradation enhanced by gate pulse-induced-noise is analyzed experimentally and theoretically. After eliminating the noise problem, it is found that AC hot-carrier degradation in LDD (Lightly doped drain) and GOLD (gate-drain overlapped device) structures can be estimated based on DC degradation in terms of the effective stress time which takes the duty ratio into account. In addition, it is found that the noise is negligible when the wiring inductance is smaller that 80 nH (250 mω), which is important for future circuit design.Furthermore, hot-carrier detrapping effects, especially in p-channel MOS devices, and hot-carrier phenomena under mechanical stress are investigated experimentally to better understand the underlying hot-carrier physics. Finally, future hot-carrier resistant device structures are discussed.     

三维定量储层地质模型与参数动态预测方法

提出了三维定量储层地质模型及其参数动态预测方法，用该方法可预测储层开采状态，水淹区及剩余油区分布和各剩余油区的可采储量，三维定量储层地质模型的预测图件可为合理开采提供依据。     

HYQ-965-Ⅲ解堵剂的研制及现场应用

针对涠洲11-4油田W11-4D-A1井返吐油基泥浆堵塞油管问题,以渗透剂、乳化剂、分散剂、互溶剂为原料,制备了HYQ-965-Ⅲ解堵剂.考察了不同配方解堵剂中原料间的配伍性和溶垢效果,研究了最佳配方:渗透剂Ⅰ20%、乳化剂Ⅰ10%、分散剂10%、互溶剂10%、海水50%.将该解堵剂在W11-4D-A1井进行应用,从现场使用情况看,HYQ-965-Ⅲ对油基泥浆、原油具有很好的分散能力,成功解除了油管堵塞,达到预期设计要求.     

Integrated optical devices of InGaAsP/InP heterojunction phototransistor and inner stripe light-emitting diode

New integrated optical devices combining an InGaAsP/InP HPT and an inner-stripe LED are proposed and their fabrication processes are described. The device functions of light amplification, optical bistability, and optical switching are demonstrated in the 1-μm wavelength region.     

熔融温度对PP中成核剂的异相成核作用的影响

用DSC研究了熔融温度对不同类型成核剂成核PP的异相成核作用的稳定性的影响。观察到随熔融温度提高，纯PP的成核作用稳定，降温结晶温度基本不变。而有机磷酸盐类成核剂成核PP的结果温度比纯PP的高，而且异相成核作用受熔融温度的影响也很小。但山梨醇类成核剂成核PP的异相成核作用随熔融温度提高，结晶温度逐步降低明显，表明其异相成核作用对热不稳定。     

用微机计算电子衍射径向分布函数

本文介绍用微机计算非晶态高聚物电子衍射径向分布函数(RDF)。运用二次样条函数分段拟合及傅氏积分的数学方法,通过 BASIC 程序,只要输入初始实验数据即可自动解算且连续得到与各运算阶段相应的曲线图及其运算结果.     

Metallized ultra-shallow-junction device technology for sub-0.1μm gate MOSFET's

This paper describes a new ultra-thin SOI-CMOS structure offering reduced parasitic diffusion-layer resistance. It addresses ways to deal with the ultra-shallow junctions required by sub-0.1 μm MOSFET's. Based on a CVD tungsten process we experimentally investigate the characteristics of selectively grown tungsten used in the source and drain region made in SOI layers of various thicknesses ranging from 10 to 100 nm. We also investigate certain CMOS device characteristics. The SOI-CMOS structure, with low parasitic diffusion-layer resistance and good contact characteristics for ultra-shallow junction devices exhibits superior device performance and high scalability