Resonance bands and resonating pairs: theoretical fundamentals ofresonant tunneling

Resonant tunneling through one-dimensional quantum-mechanical systems such as multibarrier structures and superlattices has been studied in order to solidify the foundation of exact and comprehensive treatment of it. For general systems with piecewise continuous potential and effective-mass profiles, it is proven that allowable energy levels for resonant tunneling comprise a band structure-i.e., resonance bands which are distinct, in general, from the so-called subbands. One can see a resonance is attained by adjusting external parameters to match with a real resonating pair of the objective section (internal structure). In a series connection of two or more subsections (or a heterostructure with two or more layers), resonant tunneling is shown to be caused, this time, by a matching of generally complex resonating pairs of each couple of succeeding subsections. Two particular kinds of structures, i.e., imaginal-iteration and simple-iteration structures, are investigated in detail with regard to the matching between subsections at each resonant energy level. Thus, the possibility of resonance can be seen not directly related with resonance bands of the subsections. The overall argument will provide insight into the mechanism of resonant tunneling     

Thermal performance of a packed bed reactor for a high‐temperature chemical heat pump

The thermal performance of a chemical heat pump that uses the reaction system of calcium oxide/lead oxide/carbon dioxide, which is developed for utilization of high‐temperature heat above 800°C, is studied experimentally. The thermal performance of a packed‐bed reactor of a calcium oxide/carbon dioxide reaction system, which stores and transforms a high‐temperature heat source in the heat pump operation, is examined under various heat pump operation conditions. The energy analysis based on the experiment shows that it is possible to utilize high‐temperature heat with this heat pump. This heat pump can store heat above 850°C and then transform it into a heat above 900°C under an approximate atmospheric pressure. An applied system that combines the heat pump and a high‐temperature process is proposed for high‐efficiency heat utilization. The scale of the heat pump in the combined system is estimated from the experimental results. Copyright © 2001 John Wiley & Sons, Ltd.     

Fabrication by Coaxial-Type Vacuum Arc Evaporation Method and Characterization of Bismuth Telluride Thin Films

We prepared both n- and p-type bismuth telluride thin films by using a coaxial-type vacuum arc evaporation method. The atomic compositions of the as-grown thin films and several annealed thin films were comparable to that of bulk bismuth telluride. Their thermoelectric properties were measured and found to be comparable to those of bulk materials. The Seebeck coefficient and electrical conductivity of the as-grown thin films were improved by the annealing process. The measured figures of merit (ZT) of the films were 0.86 for the n-type and 0.41 for the p-type at 300 K for annealing temperatures of 573 K and 523 K, respectively.     

Enhanced Hole‐Transporting Behavior of Discotic Liquid‐Crystalline Physical Gels

Discotic liquid‐crystalline (LC) physical gels have been prepared by combining the self‐assembled fibers of a low‐molecular‐weight gelator and semiconducting LC triphenylene derivatives. The hole mobilities of the discotic LC physical gels measured by a time‐of‐flight method become higher than those of LC triphenylenes alone. The introduction of the finely dispersed networks of the gelator in the hexagonal columnar phases may affect the molecular dynamics of the liquid crystals, resulting in the enhancement of hole transporting behavior in the LC gel state.     

Estimation of Current Distribution on Multilayer Printed Circuit Board by Near-Field Measurement

A method of estimating the current distribution on a microstrip transmission line of a multilayer printed circuit board (PCB) by measuring the near-field distribution is proposed. The microstrip transmission line on the PCB is divided into electrically small segments. An electric field integral equation (EFIE) is established to relate the near field to the current on these segments. The current is estimated by measuring the near field, evaluating the mutual impedance between the current segments, and solving the EFIE. The measurement parameters for near-field measurement are optimized by numerical analysis. Experimental results are presented and compared with the numerical results, confirming the validity of this method.     

A 300-MHz 25-/spl mu/A/Mb-leakage on-chip SRAM module featuring process-variation immunity and low-leakage-active mode for mobile-phone application processor

An on-chip 1-Mb SRAM suitable for embedding in the application processor used in mobile cellular phones was developed. This SRAM supports three operating modes - high-speed active mode, low-leakage low-speed active mode, and standby mode - and uses a subdivisional power-line control (SPC) scheme. The combination of three operating modes and the SPC scheme realizes low-power operation under actual usage conditions. It operates at 300 MHz, with leakage of 25 /spl mu/A/Mb in standby mode, and 50 /spl mu/A/Mb at the low-leakage active mode. This SRAM also uses a self-bias write scheme that decreases of minimum operating voltage by about 100 mV.     

Purification of metallurgical‐grade silicon up to solar grade

An estimate has been made of the feasibility of a metallurgical purification process, the NEDO (New Energy and Industrial Technology Development Organization) melt‐purification process, for manufacturing solar‐grade silicon from metallurgical‐grade silicon. Equipment has been developed to pilot manufacturing plant scale. The system comprises an electron‐beam furnace for phosphorus removal and a plasma furnace for boron removal. Each furnace has a mold for directional solidification to remove metallic impurities. The concentration of each impurity in the silicon ingot purified through the whole process satisfied the solar‐grade level. The Solar‐grade silicon produced showed p‐type polarity and resistivity within the range 0·5–1·5 Ω cm. Copyright © 2001 John Wiley & Sons, Ltd.     

Overview on Technical Issues for Future Mobile Network and a Proposal of DLC Scheme in Wireless Link

This paper gives an overview on technical issues for future mobile networks. the QoS control for multimedia services, security function, expansion of network capacity, expansion of address space, multicast function, radio link quality and mobility control of terminals are taken up as technical issues.Then, a novel DLC scheme in wireless link named EREP-ARQ (Estimation and Report of Error Pattern ARQ) which can reduce the retransmission ratio is proposed. In this scheme, error pattern generated in the radio link is estimated at the receiver side and the estimated error pattern is returned to the transmission side. If the estimation is correct, no retransmission is needed. Compared to conventional SR-ARQ, throughput can be improved by17% and Cell Loss Ratio (or Packet Loss Rate) can be reduced to less than 1/10 by the proposed EREP-ARQ.