计算机网络安全系统设计

分析了现代计算机网络所面临的威胁和各种安全问题,同时提出了在设计一个有关网络系统时应该考虑的一些安全问题,如网络安全策略与技术、网络的访问控制、网络数据加密技术、信息隐藏技术等安全问题。     

Segmented polymer networks containing amino‐dendrimers

Polymer networks in which poly(propylene imine) dendrimers (Astramol?) are connected to each other by linear polytetrahydrofuran (polyTHF) segments, were prepared by two methods. The first method was a one‐step procedure in which bifunctionally living polyTHF, obtained by initiation of the THF polymerization with trifluoromethane sulfonic anhydride (triflic anhydride), was reacted with an amino‐dendrimer. This reaction was very fast but did not allow formation of the end products. The second method was a two‐step procedure. In a first step, living polyTHF, prepared with acryloyloxybutyl triflate as initiator, was grafted on an amino‐dendrimer, to form a star‐like, acrylate‐terminated polyTHF multi‐macromonomer with the dendrimer as core. In a second step, networks were obtained by Michael addition between the acrylate end‐groups and unreacted amino‐groups of the dendrimer. This cross‐linking reaction occurred spontaneously upon heating of the solution of the multi‐macromonomer with gelation times varying from a few minutes to a few hours, depending on the temperature and the composition of the prepolymers. With this method it was possible to prepare networks in the form of coatings or films. © 2003 Society of Chemical Industry     

草酸钙在硫酸软骨素自组装膜上周期沉淀的研究

利用硫酸软骨素(chondroitin sulfate，CS)在云母基底上通过浇铸法制备的自组装膜为基底，诱导草酸钙在其上的凝集生长。发现当硫酸软骨素的浓度为1．Omg／ml时在该膜体系中可形成规整的周期性草酸钙环状沉淀。这种有序的环状结构可能是耗散结构的一种具体表现形式。利用原子力显微镜(atomic forcemicroscope，AFM)和傅立叶红外光谱仪对这种结构进行了表征，实验结果显示合适浓度下形成的CS膜在一定程度上可以抑制草酸钙的凝集结晶，表明高分子基质与无机离子间强烈的相互作用对无机盐的成核结晶有显著影响，为探讨结石的形成与抑制提供了一定的实验依据。     

An optimization model for placement of wavelength converters to minimize blocking probability in WDM networks

The introduction of wavelength converters in wavelength division multiplexing (WDM) networks can reduce the blocking probabilities of calls. In this paper, we study the problem of placing a given number of converters in a general topology WDM network such that the overall system blocking probability is minimized. The original contributions of this work are the following: 1) formulation of success probability in a network as a polynomial function of the locations of converters; 2) proposal of an optimization model of the converter placement problem as the minimization of a polynomial function of 0-1 variables under a linear constraint, so that standard optimization tools can be employed to solve the problem; and 3) design of a search algorithm that can efficiently find the optimal solution to the converter placement problem. Experiments have been conducted to demonstrate the effectiveness of the proposed model and the efficiency of the algorithm.     

16信道0.35μmCMOS/VCSEL光发射模块

研究了垂直腔面发射激光器 (VCSEL)及其列阵器件的光谱特性、调制特性、高频特性及与微电子电路的兼容性 ,将 1× 16的VCSEL与CMOS专用集成电路进行多芯片组装 (MCM ) ,混合集成为 16信道VCSEL光发射功能模块 .测试过程中 ,功能模块的光电特性及其均匀性良好 ,测量的 - 3dB频带宽度大于 2GHz.     

微机械可调谐滤波器的研制

利用 Ga As/Al Ga As分布反馈 Bragg反射镜在 Ga As衬底上制作了一个微机械的调谐滤波器 .该器件在 7V调谐电压下调谐范围达28nm     

微波干燥在气相超稳Y型分子筛制备中的应用研究

研究了微波干燥在气相超稳Y型分子筛制备中的应用。结果表明，分子筛经微波干燥后，其理化性质有所改善，结晶度提高，经气相超稳化反应后其产品结构及物化性质与传统电加热干燥后的气相超稳产品基本一致，说明微波干燥可替代传统干燥方式。与传统电加热干燥方式相比，微波干燥能缩短干燥时间，有效降低能耗。     

菱镁矿固硫特性的理论分析

对菱镁矿在固体燃料燃烧过程中的固硫特性进行了理论研究，所得结论对进一步将菱镁矿作为固体燃料燃烧过程中的固硫剂具有非常重要的意义。     

Σ-ΔA/D转换技术及仿真

Σ－ΔＡ／Ｄ转换技术近年来颇受重视，因为基于该技术的Ａ／Ｄ转换器能达到很高的分辨率（１６ｂｉｔ以上），并另具一系列优点。本文对Σ－ΔＡ／Ｄ转换器的基本原理，包括过采样（Ｏｖｅｒｓａｍｐｌｉｎｇ），噪声成形（ＮｏｉｓｅＳｈａｐｉｎｇ），以及数字抽取滤波（ＤｉｇｉｔａｌＤｅｃｉｍａｔｉｏｎＦｉｌｔｅｒｉｎｇ）等内容，均作了叙述。作者还对一个２０ｂｉｔΣ－Δ转换器的算法进行了计算机仿真。该转换器采用了高阶ＭＡＳＨ噪声成形技术，而其数字抽取滤波部分则由梳状滤波器与级联的半带滤波器构成。文章中给出了仿真结果。     

Reduction of sodium-accelerated oxidation of silicon nitride ceramics by aluminium implantation

Norton NBD 200 silicon nitride ceramics were implanted with sodium to a dose of 7.0×10¹⁵cm^-2 at 72 keV (1 at% peak sodium content at 100 nm). The sodium-implanted samples were further implanted with aluminium to 7.3×10¹⁵cm^-2 at 87 keV (1 at% peak aluminium content at 100 nm). The implanted and unimplanted samples were oxidized in 1 atm dry oxygen at 1100 and 1300°C for 2–6 h. Profilometry and scanning electron microscopy measurements indicated that sodium implantation led to up to a two-fold increase in the oxidation rate of silicon nitride. The sodium effect was effectively neutralized when aluminium was co-implanted. The opposite effects of sodium and aluminium on the oxidation resistance of silicon nitride can be attributed to their different roles in modifying the structure and properties of the oxide formed. This revised version was published online in November 2006 with corrections to the Cover Date.