An Efficient Paging Strategy Based on Paging Agents of Base Stations in Cellular Mobile Networks

We propose a new paging strategy to reduce paging cost by adding paging agents at base stations. When a mobile‐terminated call occurs, the base stations look up the paging agents to determine if terminal paging is actually to be made. An analytical model based on a Markov chain is used to evaluate the performance of the proposed strategy. The numerical results show that the proposed strategy significantly reduces the paging cost compared with the simultaneous paging strategy.     

An Improved On-Wafer Measurement Method for PHEMT Modeling for Millimeter Wave Application

An improved on-wafer measurement method by using coaxial calibration instead of on-wafer calibration for PHEMT modeling is proposed in this paper. The advantage is that S-parameters of PHEMT device can be measured on wafer without impedance standard substrate (ISS) after the S-parameters of the microprobes have been determined. Excellent agreement is obtained between on-wafer calibration measurement and coaxial calibration measurements, respectively.     

Blocky artefact reduction using an adaptive constrained leastsquares method

A blocky artefact reduction algorithm using the constrained least squares (CLS) approach is described. The authors use a new objective function which effectively constrains the relationship between not only the block boundary pixels but also the inner pixels. By gracefully reducing the visible discontinuities along the block boundaries, the proposed algorithm shows excellent noise reduction performance     

Scheduling algorithm for real-time imprecise computations tominimise maximum weighted errors using the linear programmingmethod

An optimal scheduling algorithm for imprecise systems is presented. The proposed algorithm aims at minimising the maximum weighted errors. A novel property of the algorithm is that the errors are evenly distributed among scheduled tasks. The complexity of the proposed algorithm is O(N³) in the worst case, where N is the number of tasks     

Hydrogenated amorphous silicon thin film transistor fabricated onplasma treated silicon nitride

We have demonstrated that the performance of the inverted staggered, hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) is improved by a He, H₂, NH₃ or N₂ plasma treatment for a short time on the surface of silicon nitride (SiN _x) before a-Si:H deposition. With increasing plasma exposure time, the field-effect mobility increase at first and then decrease, but the threshold voltage changes little. The a-Si:H TFT with a 6-min N₂ plasma treatment on SiN_x exhibited a field effect mobility of 1.37 cm²/Vs, a threshold voltage of 4.2 V and a subthreshold slope of 0.34 V/dec. It is found that surface roughness of SiN_x is decreased and N concentration in the SiN _x at the surface region decreases using the plasma treatment     

Dependence of electrical properties on the crystallographic orientation of CBr4-doped GaAs epilayers grown on GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition

Carbon incorporation into GaAs epilayers has been performed by atmospheric pressure metalorganic chemical vapor deposition using CBr4. The electrical properties of CBr₄-doped GaAs epilayers grown on the GaAs substrates with various surface crystallographic orientations between (100) and (111)A were investigated. The electrical properties of the epilayers showed a strong crystallographic orientation dependence. On increasing the surface offset angle, the hole concentration of CBr4-doped GaAs epilayers rapidly decreased with a hump at (311)A. The lower hole concentration at the high offset angle can be explained by its higher desorption rate than that of the (100) surface. This hole concentration dependence on the offset angle was not changed in spite of the growth temperature and the V/III ratio variation given in this work. The above behaviors indicate that the surface kinetics plays an important role in the C incorporation into the non-planar GaAs epilayers.     

Microbial production of inulo-oligosaccharides by an endoinulinase from Pseudomonas sp. expressed in Escherichia coli

In an attempt to utilize the whole cell as a biocatalyst for inulo-oligosaccharide (IOS) production from inulin, the endoinulinase gene (inu1) of Pseudomonas sp. was cloned into the plasmid pBR322 using EcoRI restriction endonuclease and Escherichia coli HB101 as the host strain. The endoinulinase from E. coli HB101/pKMG50 was constitutively expressed, producing a high yield of IOS (78%). In a batchwise reaction, the initial enzyme concentration determined the total oligosaccharide yield, and excess enzyme decreased the total oligosaccharide yield due to the formation of high amounts of free sugars such as glucose and fructose. The recombinant E. coli expressing endoinulinase activity were immobilized on a polystyrene carrier material, resulting in a dramatically enhanced thermal stability of the enzyme. Continuous production of IOS from inulin was also carried out at 50 degrees C using a bioreactor packed with the immobilized cells. Under the optimal operation conditions, continuous production of IOS was achieved with a productivity of 150 g/l.h for 17 d at 50 degrees C without significant loss of initial activity.     

Meshing wireless personal area networks: Introducing IEEE 802.15.5

This article presents an overview of the IEEE project 802.15.5 that targets providing mesh capabilities to both high-rate and low-rate wireless personal area networks. Low-rate mesh is built on IEEE 802.15.4 MAC, while high-rate mesh utilizes IEEE 802.15.3 MAC. We seek to share our insights and motivations of the approach adopted in the major components of the standard instead of presenting a la carte items drawn in the specification. We hope this article helps readers of the 802.15.5 standard to better understand the rationale and intent of the protocol design.     

Designing a Stable Cathode with Multiple Layers to Improve the Operational Lifetime of Polymer Light‐Emitting Diodes

The short device lifetime of blue polymer light‐emitting diodes (PLEDs) is still a bottleneck for commercialization of self‐emissive full‐color displays. Since the cathode in the device has a dominant influence on the device lifetime, a systematic design of the cathode structure is necessary. The operational lifetime of blue PLEDs can be greatly improved by introducing a three‐layer (BaF₂/Ca/Al) cathode compared with conventional two‐layer cathodes (BaF₂/Al and Ba/Al). Therefore, the roles of the BaF₂ and Ca layers in terms of electron injection, luminous efficiency, and device lifetime are here investigated. For efficient electron injection, the BaF₂ layer should be deposited to the thickness of at least one monolayer (～3 nm). However, it is found that the device lifetime does not show a strong relation with the electron injection or luminous efficiency. In order to prolong the device lifetime, sufficient reaction between BaF₂ and the overlying Ca layer should take place during the deposition where the thickness of each layer is around that of a monolayer.     

Parallel optical transmitter module using angled fibers and a V-grooved silicon optical bench for VCSEL array

We propose an advanced structure of optical subassembly (OSA) for packaging of the vertical-cavity surface-emitting laser (VCSEL) array, using (111) facet mirror of the V-groove ends formed in a silicon optical bench (SiOB) and angled fiber apertures. The feature of our OSA can provide a low optical crosstalk between neighboring channels, a low feedback reflection, and a large misalignment tolerance along the V-groove. We describe the optimized design of fiber angle, VCSEL position, and fiber position. The fabricated OSA structure consists of 12 channels of angled fiber array, 54.7/spl deg/ V-grooves, Au-coated mirrors on (111) end facet of the V-grooves, and flip-chip-bonded VCSEL array on a SiOB. In this structure, the beam emitted from the VCSEL is deflected at the 54.7/spl deg/ mirror of (111) end facet and propagated into the angled fiber. The angled fiber array was polished by 57/spl deg/. Fabricated OSAs showed a coupling efficiency of 30%-50% that is 25 times larger than that obtained from an OSA with a vertically flat fiber array. Our OSA showed large misalignment tolerance of about 90 /spl mu/m along the longitudinal direction in the V-groove. We fabricated a parallel optical transmitter module using the OSA and demonstrated 12 channels /spl times/2.5 Gb/s data transmission with a clear eye diagram.