部分种子成分的特征X射线在等效生物材料中衰减的测定

用Ｓｉ（Ｌｉ）探测器实现了Ｎａ、Ｍｇ、Ｓ、Ｃｌ的特征Ｘ射线在有机膜中的相对衰减以及与Ｏ、Ｋ元素的特征Ｘ射线能量相当的Ｘ射线或轫致辐射在有机膜中的相对衰减，分别得出了它们减的数学描述，并把实验得到不同能量的Ｘ射线在有机膜中的质量吸收系数与Ｂｅｒｋｅｌｅｙ的ＯＣＧ软件计算出的结果相比，相关都小于３０％。     

淀积条件对GDa—SiNx薄膜电学特性的影响

本文讨论了用辉光放电法制备氮化硅薄膜时衬底温度、射频功率和气体流量比对薄膜的电导率、介电常数和击穿强度的影响。通过优化生长条件，制备了优质非晶氮化硅薄膜，其介电常数为７．５、击穿强度为５．５ＭＶ／ｃｍ、电导率为１０－１３（Ωｃｍ）－１。     

钨铜合金药型罩及其性能

钨铜合金药型罩的应用可以提高射流对均质钢靶的侵彻能力.这一提高得益于射流密度的提高以及断裂时间的延长. 本文对钨铜合金射流及其断裂形态通过X光照像进行了研究.它的旋转效应及其炸高特性也进行了实验研究. 钨铜合金药型罩的威力实验在φ30 mm的破甲弹上进行.在相同装药条件下与紫铜罩相比,威力提高20～30%.     

2,3,4- or 2,3,5-trisubstituted furans: catalyst-controlled highly regioselective ring-opening cycloisomerization reaction of cyclopropenyl ketones

2,3,4- or 2,3,5-trisubstituted furans were highly regioselectively formed from the cycloisomerization reaction of the same starting cyclopropenes 1 via the subtle choice of the transition metal halides. Under the catalysis of 5 mol % PdCl2(CH3CN)2, 2,3,5-trisubstituted furans 2 were given in 50-88% yields with 95-99% regioselectivities, while 2,3,4-trisubstituted furans 3 were formed in 78-96% yields with 99% regioselectivities under the catalysis of 5 mol % CuI.     

Extended analysis of ground impedance measurement using the fall-of-potential method

An extended analysis of ground impedance measurement using the fall-of-potential method will be presented. An interesting curve that represents the exact locations of the potential probe when the potential and current probes are in different directions is obtained for the first time. Curves representing measurement error are also presented for the case when the potential probe is placed in locations where the correct ground impedance cannot be measured. A similar analysis for ground impedance measurements in multilayer soils is also discussed. The study presented in this paper has extended the theory of the conventional fall-of-potential method and the results obtained can serve as a practical guide for ground impedance measurements made using this method.     

标准椅全身计数器对不同年龄组均匀体模源全能峰效率的刻度

本文介绍了用标准液体源均匀充入聚氯乙烯制的体模,刻度标准椅全身计数器〔φ8″×4″(NaI)〕的方法和结果。分别就代表6个年龄组的体模,测定了标准椅全身计数器对5种能量(364,637,898,1460和1836keV)γ射线的全能峰效率;给出了全能峰效率与γ射线能量和被测对象体重的关系曲线。     

高质量的一级光栅1．55μmDFB激光器

本文详细叙述了ＤＦＢ激光器的设计要点和新的工艺。采用一级全息光栅和二步液相外延法批量研制出高稳定单纵模工作的１．５５μｍ分布反馈激光器（ＤＦＢ—ＬＤ）。外延片成品率＞４０％。器件特性：２５℃时阈值电流２０ｍＡ，单面光功率＞１０ｍｗ，主边模抑制比ＳＭＳＲ达４３ｄＢ（λ／４相移光栅），谱线宽度△ν－２０ｄＢ＝０．３ｎｍ，调制速率＞１．８ＧＨｚ。可靠性测试显示：高温监测光谱稳定，２５°Ｃ时阈值退化率△Ｉｔｈ／ｔ＜０．３ｍＡ／ｋｈ，对应器件预估寿命将超过１０万ｈ。     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate