Analysis of the Datagram Congestion Control Protocol’s connection management procedures using the sweep-line method

State space explosion is a key problem in the analysis of finite state systems. The sweep-line method is a state exploration method which uses a notion of progress to allow states to be deleted from memory when they are no longer required. This reduces the peak number of states that need to be stored, while still exploring the full state space. The technique shows promise but has never achieved reductions greater than about a factor of 10 in the number of states stored in memory for industrially relevant examples. This paper discusses sweep-line analysis of the connection management procedures of a new Internet standard, the Datagram Congestion Control Protocol (DCCP). As the intuitive approaches to sweep-line analysis are not effective, we introduce new variables to track progress. This creates further state explosion. However, when used with the sweep-line, the peak number of states is reduced by over two orders of magnitude compared with the original. Importantly, this allows DCCP to be analysed for larger parameter values. Somsak Vanit-Anunchai was partially supported by an Australian Research Council Discovery Grant (DP0559927) and Suranaree University of Technology. Guy Edward Gallasch was supported by an Australian Research Council Discovery Grant (DP0559927).     

Real-time measurement of pointing action by using DSP

This paper presents an approach of measuring in real-time the vector of finger that is pointing to an object. DSP is used in the operation processing unit in order to do the real-time processing. The steps include the extraction of flesh-colored regions from an image, the labeling of the flesh-colored regions, and the detection of two characteristic positions on the finger so that the direction that the finger is pointing at will be calculated. The entire process takes about 29 msec, which makes it possible to have the frame rate of 34 fps. With this frame rate, this measurement approach is considered real-time and promising to be merged into other application systems. This work was presented in part at the 13th International Symposium on Artificial Life and Robotics, Oita, Japan, January 31–February 2, 2008     

Exchange and oxidation of CO on O-predosed Rh---Al2O3 and Rh---CeO2 catalysts

Exchange and oxidation of C¹⁶O were investigated at 450°C on ¹⁸O-predosed Rh and Pt catalysts supported on A1₂O₃, CeO₂ and CeO₂-Al₂O₃. In all cases, a rapid exchange of C¹⁶O with the surface can be observed. CO oxidation leads to C¹⁶O₂, C¹⁶O¹⁸O and C¹⁸O₂. Significant formation of C¹⁶O₂ is due to the relatively high ¹⁶O coverage in reaction resulting from the C¹⁶O exchange and from an exchange between O surface species and ¹⁶O internal atoms. Hydrogen is also formed via a water-gas shift reaction (CO + surface OH) in higher proportion on CeO₂-containing catalysts than on A1₂O₃. Chlorine inhibits all the reactions (exchange, oxidation and WGS) and particularly the internal exchange.     

Simplified 0.35-μm flash EEPROM process using high-temperatureoxide (HTO) deposited by LPCVD as interpoly dielectrics and peripheraltransistors gate oxide

A simplified flash EEPROM process was developed using high-temperature LPCVD oxide both as flash cells interpoly dielectrics and as peripheral transistors gate oxide (decoding logic). An O₂ anneal at 850°C lowers charge trapping and interface trap density induced by Fowler-Nordheim injection. However, electron trapping remains slightly higher than with dry thermal oxide. Similar memory charge loss and write-erase endurance are obtained as for ONO-insulated cells. HTO thus proves to have the required quality and reliability to be used in flash EEPROMs     

Electrical properties and positron annihilation study of (Ba<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ho<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>)TiO<Subscript>3</Subscript> ceramics

DC resistivity, dielectric constant, dielectric loss and positron annihilation spectra of (Ba_1−x Ho _x )TiO₃ ceramics have been measured as a function of holmium concentration x. It has been found that the DC resistivity of (Ba_1−x Ho _x )TiO₃ is strongly dependent on the Ho content: it decreases three orders of magnitude and reaches a minimum at x = 0.4%. Doping with 0.6% holmium increases the permittivity of BaTiO₃ by approximately three times (from ∼1,300 to ∼4,000), with only a slight increase in the corresponding dielectric loss. The local electron density and defect concentration estimated using positron annihilation technique conforms well to the features found in the dielectric and resistivity measurements. The results have been discussed in terms of a mixed compensation model.