A 100-Msps sampling analog-to-digital converter chip set

The authors describe a 100-Msps sampling analog-to-digital converter (ADC) chip set that can be used for a wideband high-resolution digital storage oscilloscope (DSO). A high conversion rate and a 500-MHz sampling bandwidth with an 8-b effective resolution are obtained by a combination of three Si-bipolar chips and two GaAs-diode chips. the ADC uses a pipelined two-step subranging architecture that uses two cascade wideband track-and-hold (T/H) circuits. The design features of the T/H circuits and the residual amplifier are also presented     

Observation of sooting behavior in single droplets combustion in direct current electric fields under microgravity

Because of ions and electrons in flame, flow is induced around flame in electric filed. It affects combustion phenomena, and the effect has seemed to be significant for droplet combustion in previous study. This study is focused on movement of soot particle in single droplets combustion in direct current electric fields under microgravity in order to obtain some information about flow field around droplet. The large soot particles were observed by high-speed CCD camera, and the soot velocities are measured by PTV method. The single droplets were burned in the center of electrodes, which are two parallel rectangular wire nettings. Distance between electrodes is 50mm and applied voltages between electrodes are from 0kV to 6kV. Fuels tested are n-octane and toluene and the initial droplet diameters are around 0.8mm. All experiments were performed in microgravity in order to eliminate the natural convection. The results shows the velocities of soot particle are mainly in the direction of electric field, and most soot particles move to the cathode but some move to the anode. This indicates some soot particles have some negative charges. The velocities of soot particle increase with increasing in the distance from the droplet in both directions, and the velocity to cathode is larger than that to anode. From these results, the change of electric field and flow field around droplet are discussed.     

Characterization of AlF3 thin films at 193 nm by thermal evaporation

Aluminum fluoride (AlF3) was deposited by a resistive heating boat. To obtain a low optical loss and high laser-induced damage threshold (LIDT) at 193 nm, the films were investigated under different substrate temperatures, deposition rates, and annealing after coating. The optical property (the transmittance, refractive index, extinction coefficient, and optical loss) at 193 nm, microstructure (the cross-sectional morphology, surface roughness, and crystalline structure), mechanical property (stress), and LIDT of AlF3 thin films have been studied. AlF3 thin films deposited at a high substrate temperature and low deposition rate showed a lower optical loss. The highest LIDT occurred at the substrate temperature of 150 degrees C. The LIDT of the films prepared at a deposition rate of 2 A/s was higher than that at other deposition rates. The annealing process did not influence the optical properties too much, but it did increase the LIDT and stress.     

A lithium superionic conductor

Batteries are a key technology in modern society. They are used to power electric and hybrid electric vehicles and to store wind and solar energy in smart grids. Electrochemical devices with high energy and power densities can currently be powered only by batteries with organic liquid electrolytes. However, such batteries require relatively stringent safety precautions, making large-scale systems very complicated and expensive. The application of solid electrolytes is currently limited because they attain practically useful conductivities (10(-2) S cm(-1)) only at 50-80 °C, which is one order of magnitude lower than those of organic liquid electrolytes. Here, we report a lithium superionic conductor, Li(10)GeP(2)S(12) that has a new three-dimensional framework structure. It exhibits an extremely high lithium ionic conductivity of 12 mS cm(-1) at room temperature. This represents the highest conductivity achieved in a solid electrolyte, exceeding even those of liquid organic electrolytes. This new solid-state battery electrolyte has many advantages in terms of device fabrication (facile shaping, patterning and integration), stability (non-volatile), safety (non-explosive) and excellent electrochemical properties (high conductivity and wide potential window).     

Optimized Eddy Current Detection of Small Cracks in Steam Generator Tubing

A complete, computer based design methodology is described, aiming to develop an eddy current sensor with increased sensitivity to flaws, and reduced sensitivity to probe lift-off. The first part of the paper contains an analysis performed in order to establish detailed criteria for an effective design. Numerical investigations have been carried out and their results are discussed, regarding various problems of detectability and lift-off noise level. Based on these results, in the second part two probe arrangements are proposed, and it is shown how their performance parameters could be further improved.     

Expression of two angiogenic factors, vascular endothelial growth factor and platelet-derived endothelial cell growth factor in human pancreatic cancer, and its relationship to angiogenesis

Twenty-three cases of ductal carcinoma in situ (DCIS), ten of which had an associated invasive component, were studied for loss of heterozygosity (LOH) of microsatellite markers on chromosome 9p and the results compared with a panel of 20 invasive breast carcinomas. In addition to the gene encoding p16, chromosome 9p is also thought to contain other putative tumour-suppressor genes. If the three panels of breast tumours showed LOH of markers in this region this would suggest that such putative genes were important in breast carcinogenesis. By studying both preinvasive and invasive breast tumours, it should also be possible to gain further information about the relationship between lesions of a different stage and to determine whether DCIS is indeed a precursor of invasive ductal carcinoma. Levels of LOH were low in the invasive-only set of tumours. Surprisingly, considerably higher levels of loss were observed in the tumours with an in situ component. Also, much heterogeneity was observed between different DCIS ducts or invasive tumour and DCIS from the same case.     

CSF spaces in idiopathic normal pressure hydrocephalus: morphology and volumetry

PURPOSE: Idiopathic normal pressure hydrocephalus (NPH) is an important cause of dementia in the elderly; however, idiopathic NPH is often difficult to differentiate from normal aging and vascular dementias in which brain atrophy with ventricular dilatation (hydrocephalus ex vacuo or central atrophy) is present. To elucidate the distinctive features of the distribution of CSF in idiopathic NPH, we used MR imaging to investigate the morphologic features and volume of the CSF space in patients with idiopathic NPH compared with those with other dementias. METHODS: We assessed the size of four CSF compartments (the ventricle, basal cistern, sylvian space, and suprasylvian subarachnoid space) in 11 shunt-responsive patients with idiopathic NPH by semiquantitative and volumetric analyses of coronal T1-weighted MR images. The results were compared with those in 11 age- and sex-matched patients with Alzheimer disease and in 11 patients with vascular dementia. RESULTS: In patients with idiopathic NPH, the CSF volume was significantly increased in the ventricles and decreased in the superior convexity and medial subarachnoid spaces as compared with patients with other dementias. The sylvian CSF volume in patients with idiopathic NPH was significantly greater than in patients with Alzheimer disease. The volume of the basal cistern was comparable among the three groups. In several patients with idiopathic NPH, focally dilated sulci were observed over the convexity or medial surface of the hemisphere. CONCLUSION: Our results indicate that findings of enlarged basal cisterns and sylvian fissures and of focally dilated sulci support, rather than exclude, the diagnosis of shunt-responsive idiopathic NPH and suggest that this condition is caused by a suprasylvian subarachnoid block.     

Amorphous Si1−xCx:H films prepared by hot-wire CVD using SiH3CH3 and SiH4 mixture gas and its application to window layer for silicon thin film solar cells

B-doped hydrogenated amorphous silicon carbon (a-Si_1−xC_x:H) films have been prepared by hot-wire CVD (HWCVD) using SiH₃CH₃ as the carbon source gas. The optical bandgap energy and dark conductivity of the film are about 1.94 eV and 2 × 10^− 9 S/cm, respectively. Using this film as a window layer, we have demonstrated the fabrication of solar cells having a structure of the textured SnO₂(Asahi-U)/a-Si_1−xC_x:H(p)/a-Si_1−xC_x:H(buffer)/a-Si:H(i)/μc-Si:H(n)/Al. The conversion efficiency of the cell is found to be 7.0%.     

Distribution of active impurities in single silicon nanowires

The distribution of electrically active B concentration in single SiNWs (nanowires) grown by a vapor-liquid-solid (VLS) process was studied by analyzing Fano resonance in Raman spectra. We found a gradient of active B concentration along the growth direction; the B concentration was the largest at the substrate side and the smallest at the catalyst side. The observed concentration gradient suggests the conformal growth of a high B concentration layer during a VLS process. To confirm this effect, we grew SiNWs with controlled impurity profiles, that is, p-type/intrinsic ( p-i) and intrinsic/ p-type ( i-p) SiNWs, by controlling the supply of B source during SiNWs growth. We found that p-i SiNWs can be grown by just stopping the supply of B source in the middle of the growth, while i-p SiNWs were not realized; that is, the whole region of nominal " i-p" SiNWs was B-doped even if we started the supply of B source in the middle of the growth. These results confirm the above doping model. We also found that the distribution of active B concentration was significantly modified by high temperature annealing. By annealing at 1100 degrees C for 1 min, B concentration became almost uniform along 10 mum long SiNWs irrespective of initial B profiles. This suggests very efficient diffusion of B atoms in a defective high B concentration surface layer of SiNWs.