A 65 nm Single-Chip Application and Dual-Mode Baseband Processor With Partial Clock Activation and IP-MMU

Supporting both WCDMA with HSDPA and GSM/GPRS/EDGE, the 9.3 times 9.3 mm² SoC fabricated in triple-Vth 65 nm CMOS, has three CPU cores and 20 separate power domains. Unused power domains can be powered down to reduce the leakage power. Partial clock activation scheme especially focused on music playback scene dynamically stops a PLL and clock trees when not necessary and reduces power consumption from 33.6 mW to 19.6 mW. IP-MMU translates virtual address to physical address for 18 hardware-IPs and virtual address space can be allocated when necessary and can be freed after its operation, reducing external memory by 43 MB. Video performance of D1 (720 times 520) size with 30 frames per second for MPEG/AVC decoding and encoding can be achieved under mixed virtual and physical address usage.     

High-Performance Induction Motor Drive System Using a PWM Inverter

A high-performance speed control system for cage induction motors is described which utilizes a PWM inverter. The effects of primary current coincidence and machine constant variation on system characteristics such as response time, torque precision, and operating noise were investigated. Based on the results obtained, new control methods have been devised; one varies the gain of the current controller in proportion to the primary frequency, and a second compensates for the slip frequency by using the deviation between the flux reference value and the actual value. Effectiveness of the compensation methods was confirmed in tests.     

Hairpin-based state machine and conformational addressing: Design and experiment

In this paper, we propose a new architecture for a multi-state DNA machine whose conformation of repeated hairpin structures changes sequentially in response to input oligomers. As an application of the machine, we also propose molecular memory in which the machine is used as a memory unit. Addressing in the memory is realized through state transitions of the machine. We then describe a method for designing DNA sequences of the machine, which exhaustively checks conformational changes of the machine by dividing its secondary structure into hairpin units. The method is based on the minimum free energy of the structure, the structure transition paths, and the total frequency of optimal and suboptimal structures. DNA sequences designed by the method were tested in a chemical experiment in which a machine consisting of two hairpins was actually constructed. As a result, we verified that the multi-state DNA machine realized the expected changes in its secondary structure.     

Highly reliable copper dual-damascene interconnects with self-formed MnSi/sub x/O/sub y/ barrier Layer

Copper (Cu) dual-damascene interconnects with a self-formed MnSi/sub x/O/sub y/ barrier layer were successfully fabricated. Transmission electron microscopy shows that approximately 2-nm thick and continuous MnSi/sub x/O/sub y/ layer was formed at the interface of Cu and dielectric SiO/sub 2/, and that no barrier was formed at the via bottom because no oxygen was at the via bottom during annealing. No leakage-current increase was observed, and electron energy loss analysis shows that no Cu was in SiO/sub 2/, suggesting that MnSi/sub x/O/sub y/ layer has sufficient barrier properties for Cu, and that the concept of self-forming barrier process works in Cu dual-damascene interconnects. Via chain yield of more than 90% and 50% reduction in via resistance were obtained as compared with physical vapor deposited tantalum barrier, because there is no barrier at the via bottom. In addition, no failure in the stress-induced voiding measurement was found even after a 1600-h testing. No failure in electromigration (EM) testing was found, as the electron flow is from the lower level interconnects through via up to upper level interconnects even after 1000-h testing. At least, four times EM lifetime improvement was obtained in the case of electron flow from upper level interconnect through via down to lower level interconnects. Significant EM lifetime improvement is due to no flux divergence site at the via bottom, resulting from there being no bottom barrier at the via.     

Formalization and Analysis of Class Loading in Java

Since Java security relies on the type-safety of the JVM, many formal approaches have been taken in order to prove the soundness of the JVM. This paper presents a new formalization of the JVM and proves its soundness. It is the first model to employ dynamic linking and bytecode verification to analyze the loading constraint scheme of Java2. The key concept required for proving the soundness of the new model is augmented value typing, which is defined from ordinary value typing combined with the loading constraint scheme. In proving the soundness of the model, it is shown that there are some problems inside the current reference implementation of the JVM with respect to our model. We also analyze the findClass scheme, newly introduced in Java2. The same analysis also shows why applets cannot exploit the type-spoofing vulnerability reported by Saraswat, which led to the introduction of the loading constraint scheme.     

19-nor vitamin-D analogs: a new class of potent inhibitors of proliferation and inducers of differentiation of human myeloid leukemia cell lines

We have studied the in vitro biological activities and mechanisms of action of 1,25-dihydroxyvitamin D3 (1,25D3) and nine potent 1,25D3 analogs on proliferation and differentiation of myeloid leukemia cell lines (HL-60, retinoic acid-resistant HL-60 [RA-res HL-60], NB4 and Kasumi-1). The common novel structural motiff for almost all the analogs included removal of C-19 (19-nor); each also had unsaturation of the side chain. All the compounds were potent; for example, the concentration of analogs producing a 50% clonal inhibition (ED50) ranged between 1 x 10(-9) to 4 x 10(-11) mol/L when using the HL-60 cell line. The most active compound [1, 25(OH)2-16,23E-diene-26-trifluoro-19-nor-cholecalciferol (Ro 25-9716)] had an ED50 of 4 x 10(-11) mol/L; in contrast, the 1,25D3 produced an ED50 of 10(-9) mol/L with the HL-60 target cells. Ro 25-9716 (10(-9) mol/L, 3 days) was a strong inducer of myeloid differentiation because it caused 92% of the HL-60 cells to express CD11b and 75% of these cells to reduce nitroblue tetrazolium (NBT). This compound (10(-8) mol/L, 4 days) also caused HL-60 cells to arrest in the G1 phase of the cell cycle (88% cells in G1 v 48% of the untreated control cells). The p27(kip-1), a cyclin-dependent kinase inhibitor which is important in blocking the cell cycle, was induced more quickly and potently by Ro 25-9716 (10(-7) mol/L, 0 to 5 days) than by 1,25D3, suggesting a possible mechanism by which these analogs inhibit proliferation of leukemic growth. The NB4 promyelocytic leukemia cells cultured with the Ro 25-9716 were also inhibited in their clonal proliferation (ED50, 5 x 10(-11) mol/L) and their expression of CD11b was enhanced (80% positive [10(-9) mol/L, 4 days] v 27% untreated NB4 cells). Moreover, the combination of Ro 25-9716 (10(-9) mol/L) and all-trans retinoic acid (ATRA, 10(-7) mol/L) induced 92% of the NB4 cells to reduce NBT, whereas only 26% of the cells became NBT positive after a similar exposure to the combination of 1,25D3 and ATRA. Surprisingly, Ro 25-9716 also inhibited the clonal growth of poorly differentiated leukemia cell lines (RA-res HL-60 [ED50, 4 x 10(-9) mol/L] and Kasumi-1 [ED50, 5 x 10(-10) mol/L]). For HL-60 cells, Ro 25-9716 markedly decreased the percent of the cells in S phase of the cell cycle and increased the expression of the cyclin-dependent kinase inhibitor, p27(kip-1). In summary, 19-nor vitamin D3 compounds strongly induced differentiation and inhibited clonal proliferation of various myeloid leukemia cell lines, suggesting a therapeutic niche for their use in myeloid leukemia.     

Lattice parameter determination of a strained area of an InAs layer on a GaAs substrate using CBED

All the six lattice parameters (a, b, c, alpha, beta and gamma) of a strained area of an InAs layer grown on a GaAs substrate were determined without any assumption of the crystal lattice symmetry from the higher-order Laue zone (HOLZ) lines appearing in one convergent-beam electron diffraction (CBED) pattern. The analysis was performed with three steps. Firstly, the parameters alpha and beta were determined from the deviations of the HOLZ lines from the mirror symmetry perpendicular to the [001] direction. Secondly, the parameter c was determined from the distance between the intersections of the HOLZ lines, which have the same h and k indices but different l indices. Finally, the parameters a, b and gamma were determined simultaneously from several distances between the intersections of the HOLZ lines. The lattice parameters determined for the strained area were a = 0.611(2) nm, b = 0.615(1) nm, c = 0.6119(7) nm, alpha = 89.5(1) degrees, beta = 89.0(2) degrees and gamma = 89.1(2) degrees. This result implies that the cubic lattice of InAs is elongated approximately in the [111] direction and the exact lattice symmetry is triclinic. The same analysis procedure was applied to another two specimen areas. It was found that the areas have orthorhombic distortions with lattice parameters a = 0.607(2) nm, b = 0.604(1) nm and c = 0.6085(7) nm for one area, and with a = 0.607(2) nm, b = 0.605(1) nm and c = 0.6065(7) nm for the other area. It is should be emphasized that the present analysis of lattice distortions is immediately applicable to the other semiconductors, such as Si, SiGe or GaAs layers, without assuming any crystal system.     

In-Plane Anisotropy of the Upper Critical Field of La2−x Sr x CuO4 in the Underdoped and Overdoped Regimes

For La_2–x Sr _x CuO₄ single-crystals in the underdoped and overdoped regimes, we have measured the electrical resistivity along the c-axis, _c , under constant magnetic fields, changing the field direction in the ab-plane. At x=0.08, 0.12 and 0.16 in the underdoped and almost optimally-doped regimes, clear anisotropy of _c with the fourfold symmetry in the ab-plane has been observed. This symmetry is regarded as the fourfold symmetry of the upper critical field, H _c2, and explained as being mainly due to the anisotropy of the superconducting energy gap owing to the d_x ^{2-y 2} pairing. The magnitude of the fourfold component of H _c2, H _c2/H _c2, is largest in x=0.08 among the three crystals. At x=0.20 in the overdoped regime, no clear fourfold symmetry has been observed. It appears that the fourfold symmetry is easy to observe in the underdoped regime rather than in the overdoped regime.     

Detection of characteristic signals from as-doped (<1 at.%) regions of silicon by transmission electron microscopy and convergent-beam electron diffraction

Characteristic signals were detected from As-doped (< 1 at.%) regions of silicon by dark-field transmission electron microscopy and convergent-beam electron diffraction. A slight intensity increase was observed in 220 dark-field images, which may be explained by an increase of scattering amplitude due to the As doping. The doped region showed a much higher intensity in 004 dark-field images. The characteristic high intensity was observed for specimens with As concentrations of about 0.09-0.8 at.%. Convergent-beam electron diffraction patterns obtained from the As-doped region showed a characteristic rocking curve for 004 reflection. These characteristics should originate from incoherent elastically scattered electrons due to a static lattice distortion around the doped As atoms. The observed characteristics in dark-field images and rocking curves of the 004 reflection should be a good probe not only for investigating the concentration of doped atoms in Si lattice, but also for the amount of impurity and/or point defects in other crystalline materials.