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51.
The formation of mullite was investigated using microcomposite powders which consist of α-alumina cores and amorphous silica coatings. Differential thermal analysis and X-ray diffraction showed that the mullitization reaction was endothermic. In contrast, mullite forms exothermically in samples prepared by sol-gel processing. The results are shown to be consistent with available thermodynamic data for mullite formation from different alumina and silica phases. 相似文献
52.
Maher M. Osman Mounir M. Abd El-Malek Aida B. Tadros Atef M. Michael 《Journal of chemical technology and biotechnology (Oxford, Oxfordshire : 1986)》1995,62(1):46-52
4-Amino-3-thio-1,24-triazolidine (L1) and 4-amino-5-thio-1,3,4-thiadiazole (LII) as well as their metal complexes of the general formulae MLI·2H2O and MLIICl (M; Pb(II), Cd(II) and Zn(II)) were prepared. With Sn(II), we obtained Sn(LI)2·2H2O and SnLIICl, respectively. The structures of the compounds were identified through elemental analysis, and IR and UV spectra measurements, in addition to thermal analysis in case of the metal complexes. The antifouling properties of the compounds were tested by their incorporation into paint formulations which were applied to PVC substrates and tested in water from Alexandria western harbour. When the compounds were added at 17·5% by volume, the coated panels were fouled after 3 months of immersion. The addition of 6·7% by volume of tributyltin oxide to 15·8% of the prepared compounds in one formulation elevated the paint efficiency and prevented fouling for 11 months. Paint containing solely tributyltin oxide at the same concentration was inactive against algae. 相似文献
53.
Ting Gang Zhu Uttiya Chowdhury Michael M. Wong Jonathan C. Denyszyn Russell D. Dupuis 《Journal of Electronic Materials》2002,31(5):406-410
In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky
rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers
grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5
V at 100 A/cm2 are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage
in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm2, and a forward-voltage drop of 3.5 V at a current density of 100 A/cm2. It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC
substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge
terminations in mesageometry GaN Schottky rectifiers has also been studied. 相似文献
54.
Michael D. Vose 《Annals of Mathematics and Artificial Intelligence》1994,10(4):423-434
This paper examines the influence of mutation on the behavior of genetic algorithms through a series of examples and experiments. The results provide an existence proof that mutation is a far more profound operator than has ever been recognized. Implications are discussed which point to the importance of open questions concerning genetic algorithms. The paper also reviews the implementation of the infinite population model of Vose which forms the computational basis of this investigation. 相似文献
55.
Michael Winder 《Information Systems Management》1994,11(4):65-68
Midrange outsourcers offer small to midsize companies the advanced technologies employed by major corporations, with the added benefits of creative pricing strategies. 相似文献
56.
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58.
Michael L. Mushet 《Information Systems Management》1991,8(3):21-26
For the past three decades, IS managers have been faced with the tasks of honing their craft, improving productivity, and serving as the keepers of information technology for the corporation. For the most part, they have done a commendable job. However, the rules of the game are changing. Old solutions are no longer extensible to current problems, and today's problems are unlike any faced in the past. This article takes a fresh look at what the top priorities for IS managers should be in the coming years. 相似文献
59.
60.
Michael Bratychak Mihailo Bratychak Witold Brostow Olena Shyshchak 《Materials Research Innovations》2002,6(1):24-30
Oligomers containing peroxy groups have been synthesized on the basis of epoxides reacting with tert–butylhydroperoxide in the presence of boron trifluoride etherate. Dependence of reaction rates upon the quantity of catalyst,
temperature and also nature of hydroperoxide has been investigated: A kinetic equation for the process has been formulated
and also a kinetic scheme for the reaction taking into account the presence of boron trifluoride etherate is proposed. Structures
of the synthesized peroxy oligomers have been confirmed by IR- and NMR-spectroscopy. The reaction initiating properties of
the oligomers so synthesized were studied using as the example the styrene polymerization reaction.
Electronic Publication 相似文献