Small molecule interlayer for solution processed phosphorescent organic light emitting device

Using a 4,4′,4′′-tris(N-carbazolyl)-triphenylamine (TCTA) small molecule interlayer, we have fabricated efficient green phosphorescent organic light emitting devices by solution process. Significantly a low driving voltage of 3.0 V to reach a luminance of 1000 cd/m² is reported in this device. The maximum current and power efficiency values of 27.2 cd/A and 17.8 lm/W with TCTA interlayer (thickness 30 nm) and 33.7 cd/A and 19.6 lm/W with 40 nm thick interlayer are demonstrated, respectively. Results reveal a way to fabricate the phosphorescent organic light emitting device using TCTA small molecule interlayer by solution process, promising for efficient and simple manufacturing.     

A posteriori joint detection and discrimination of pulses in a quasiperiodic pulse train

The problem of a posteriori joint detecting and discriminating pulses in a quasiperiodic pulse train is studied. By the quasiperiodic pulse train, we mean any pulse train in which the time lapse between the beginning instants of two consecutive pulses varies over time within a certain fixed interval. We consider the kind of quasiperiodic pulse train in which the beginning instants of pulses are deterministic (nonrandom). We analyze the case when all pulses in a pulse train belong to an alphabet of reference pulses having identical duration. It is assumed that the observed interval of the pulse train contains the complete pulses (no parts of pulses are missing at the observation) and that the unobservable pulse train is distorted by an additive white Gaussian noise. Up until this time, there has been no exact algorithm to solve this a posteriori problem under these very simple assumptions because of enormous combinatorial complexity. We derive and prove an efficient (polynomial) computing algorithm for the exact solution to this problem. The recursive equations for step-by step discrete optimization are obtained under the maximum-likelihood criterion. The same formulas hold under the least-squares criterion. The computational load of the algorithm is evaluated, and its dependency on the parameters of the problem is proven.     

Analysis of the reservoir effect on electromigration reliability

The reservoir effect on electromigration reliability is analyzed using the normalized vacancy concentration distribution in the reservoir region of multi-level Al–0.5%Cu interconnect structure. With the assumption of steady state for the vacancy concentration and the fact that no current flow conducts in the reservoir region during electromigration test, a simple equation for calculation of the vacancy concentration is induced. Then direct calculation of the equation is carried out utilizing the hydrostatic stress distribution computed from finite element method to estimate the probability of initial void formation in the reservoir region. Finally, three multi-level Al–0.5%Cu interconnect structures with different reservoir lengths are constructed and electromigration lifetime for the structures is measured to clarify these computational results. From the results of this study, we conclude that the normalized vacancy concentration under the assumption of steady state can be regarded as a quantitative parameter to analyze the reservoir effect on electromigration reliability.     

An enhanced channel-quality indication (CQI) reporting scheme for HSDPA systems

A major evolution of UMTS standard is the high speed downlink packet access (HSDPA). One of key techniques supporting HSDPA is the adaptive modulation and coding (AMC) in which the modulation scheme and the coding rate are adaptively changed according to the downlink channel quality reported by the user equipment (UE). Therefore, the channel quality indication (CQI) reporting scheme is directly related to the accuracy of AMC and the performance of HSDPA. This letter proposes an enhanced CQI reporting scheme that can be used when a proportional fair scheduling algorithm (PFA) is used as a packet scheduling algorithm. The proposed scheme uses a dynamic threshold to filter off redundant CQI reports. With the proposed scheme, the battery capacity of UK can be conserved, maintaining the performance of traditional CQI reporting scheme.     

Continuous Control of Charge Transport in Bi‐Deficient BiFeO3 Films Through Local Ferroelectric Switching

It is demonstrated that electric transport in Bi‐deficient Bi_1‐δFeO₃ ferroelectric thin films, which act as a p‐type semiconductor, can be continuously and reversibly controlled by manipulating ferroelectric domains. Ferroelectric domain configuration is modified by applying a weak voltage stress to Pt/Bi_1‐δFeO₃/SrRuO₃ thin‐film capacitors. This results in diode behavior in macroscopic charge‐transport properties as well as shrinkage of polarization‐voltage hysteresis loops. The forward current density depends on the voltage stress time controlling the domain configuration in the Bi_1‐δFeO₃ film. Piezoresponse force microscopy shows that the density of head‐to‐head/tail‐to‐tail unpenetrating local domains created by the voltage stress is directly related to the continuous modification of the charge transport and the diode effect. The control of charge transport is discussed in conjunction with polarization‐dependent interfacial barriers and charge trapping at the non‐neutral domain walls of unpenetrating tail‐to‐tail domains. Because domain walls in Bi_1‐δFeO₃ act as local conducting paths for charge transport, the domain‐wall‐mediated charge transport can be extended to ferroelectric resistive nonvolatile memories and nanochannel field‐effect transistors with high performances conceptually.     

Controlling resonance frequencies in antennas to achieve wideband operation

A novel antenna design method for controlling resonance frequencies is presented. This method can be realised by simply inserting a spiral inductance and a gap capacitance into a conventional loop-type antenna, and this technique remarkably enhances an impedance bandwidth without increasing the antenna size. The proposed antenna has been designed to have 530 MHz (975?1505 MHz) and 150 MHz (2410?2560 MHz) dual bands (VSWR = 2.5), and can be effectively used as an internal antenna for global system for mobile communications (GSM) and Bluetooth bands. These wideband characteristics provide a critical advantage because the shift of an antenna operation frequency increases when it is near various other components.     

Work‐Function Engineering of Graphene Anode by Bis(trifluoromethanesulfonyl)amide Doping for Efficient Polymer Light‐Emitting Diodes

Graphene has been considered to be a potential alternative transparent and flexible electrode for replacing commercially available indium tin oxide (ITO) anode. However, the relatively high sheet resistance and low work function of graphene compared with ITO limit the application of graphene as an anode for organic or polymer light‐emitting diodes (OLEDs or PLEDs). Here, flexible PLEDs made by using bis(trifluoromethanesulfonyl)amide (TFSA, [CF₃SO₂]₂NH) doped graphene anodes are demonstrated to have low sheet resistance and high work function. The graphene is easily doped with TFSA by means of a simple spin‐coating process. After TFSA doping, the sheet resistance of the TFSA‐doped five‐layer graphene, with optical transmittance of ≈88%, is as low as ≈90 Ω sq^?1. The maximum current efficiency and power efficiency of the PLED fabricated on the TFSA‐doped graphene anode are 9.6 cd A^?1 and 10.5 lm W^?1, respectively; these values are markedly higher than those of the PLED fabricated on pristine graphene anode and comparable to those of an ITO anode.     

Mechanical bending of flexible complementary inverters based on organic and oxide thin film transistors

Flexible complementary inverters composed of p-channel pentacene thin-film transistors (TFTs) and n-channel amorphous indium gallium zinc oxide TFTs were fabricated on polymer substrates. The characteristics of the TFTs and inverters were evaluated at different bending radii. Throughout the bending experiments, the relationship between the performances of the inverters and the characteristics of the TFTs under mechanical deformation was analyzed. The mechanically applied strain led to a change in the voltage transfer characteristics of the complementary inverters, as well as the source–drain saturation current, field-effect mobility and threshold voltage of the TFTs. The switching threshold voltage of the fabricated inverters decreased with decreasing bending radius, which was related to changes in the field-effect mobility and the threshold voltage of the TFTs.     

Fabrication of excimer laser annealed poly-Si thin film transistor by using an elevated temperature ion shower doping

We have investigated the effect of an ion shower doping of laser annealed poly-Si films at elevated substrate temperatures. The substrate temperature was varied from room temperature to 300°C when the poly-Si film was doped with phosphorus by a non-mass-separated ion shower. Optical, structural, and electrical characterizations have been performed in order to study the effect of the ion shower doping. The sheet resistance of the doped poly-Si films was decreased from 7 × 10⁶ Ω/sq to 700 Ω/sq when the substrate temperature was increased from room temperature to 300°C. This large change in sheet resistance is due to the fact that the doped films do not become amorphous but remain in the polycrystallinephase. The mildly elevated substrate heating appears to contribute mainly to reduction of ion damages incurred in the poly-Si films in addition to the activation of dopants during the ion shower doping. From the fabricated n-channel poly-Si TFTs, the current crowding effect do not occur because of the low contact source-drain resistance and the field effect mobility of 120 cm²/(V s) has been obtained.     

Synthesis and electrochemical characterization of Li2MnO3–LiNixCOyMnzO2 cathode for lithium battery using co-precipitation method

The Li_xNi_0.23Co_0.12Mn_0.65O₂ electrode system with various compositions (x = 1.19, 1.33, 1.46, 1.58) was synthesized from a metal oxide precursor synthesized by co-precipitation method. The XRD patterns of the prepared powders revealed a hexagonal α-NaFeO₂ structure (space group: R-3m, 166) and the existence of a Li₂MnO₃ phase in the composite structure. In particular, the low Li content sample shows a three integrated structure (spinel, Li₂MnO₃, LiMO₂) for a Li/Metal(Ni/Co/Mn) mol ratio of 1.2. Scanning electron microscopy showed that all the synthesized samples contained spherical agglomerates with a size of 8–10 μm. Among the samples tested, Li_1.46Ni_0.23Co_0.12Mn_0.65O₂ shows relatively high charge and discharge capacity for the first cycle is 287, 192.9 mA h g^?1, respectively. Also, charge transfer resistance was also significantly improved compare with other samples.