Hill Plot Focusing on Ce Compounds with High Magnetic Ordering Temperatures and Consequent Study of Ce<Subscript>2</Subscript>AuP<Subscript>3</Subscript>

The Hill plot is a well-known criterion of the f-electron element interatomic threshold distance separating the nonmagnetic state from the magnetic state in actinides and lanthanides. We have reinvestigated the Hill plot of Ce compounds using the commercial crystallographic database CRYSTMET, focusing on a relationship between the Ce-Ce distance and the magnetic ordering temperature because a Ce compound with no other magnetic elements rarely has a magnetic ordering temperature that is higher than 20 K. The Hill plot of approximately 730 compounds has revealed that a Ce compound, particularly a ferromagnet, showing a high magnetic ordering temperature would require a short Ce-Ce distance with a suppression of the valence instability of the Ce ion. From the study, we developed interest in Ce₂AuP₃ with a Curie temperature of 31 K. The ferromagnetic nature of this material has been examined in terms of a doping effect, which suggests a possible increase in magnetic anisotropy energy.     

Giant Rashba-type spin splitting in bulk BiTeI

There has been increasing interest in phenomena emerging from relativistic electrons in a solid, which have a potential impact on spintronics and magnetoelectrics. One example is the Rashba effect, which lifts the electron-spin degeneracy as a consequence of spin-orbit interaction under broken inversion symmetry. A high-energy-scale Rashba spin splitting is highly desirable for enhancing the coupling between electron spins and electricity relevant for spintronic functions. Here we describe the finding of a huge spin-orbit interaction effect in a polar semiconductor composed of heavy elements, BiTeI, where the bulk carriers are ruled by large Rashba-like spin splitting. The band splitting and its spin polarization obtained by spin- and angle-resolved photoemission spectroscopy are well in accord with relativistic first-principles calculations, confirming that the spin splitting is indeed derived from bulk atomic configurations. Together with the feasibility of carrier-doping control, the giant-Rashba semiconductor BiTeI possesses excellent potential for application to various spin-dependent electronic functions.     

An integrated chemical sensor with multiple ion and gas sensors

An integrated chemical sensor with multiple ion and gas sensors, composed of four ISFETs (pH, Na⁺, K⁺ and Cl⁻) and two gas sensors (P_O2 and P_CO2) on a 4 mm × 4 mm chip, is realized using semiconductor processing. The ISFETs are based on an Si₃N₄-gate ISFET, and use polymeric membrane except for the pH ISFET. The P_O2 sensor is a miniaturized Clark-type sensor, consisting of a Pt cathode and Ag/AgCl anode patterned by the lift-off process. The P_CO2 sensor is a miniaturized Severinghaus-type sensor using a pH ISFET. All of the ISFETs show sensitivities over 50 mV/decade, and a linear range between 1 × 10⁻⁴ and 5 × 10⁻¹ mol/l. The sensitivities of the P_O2 and P_CO2 sensors are 0.35 nA/mmHg and 42 mV/decade, respectively, and their response times are 30 s and 1 min, respectively. The integrated chemical sensor with multiple ion and gas sensors could be used for clinical analysis.