Drivability improvement on deep-submicron MOSFETs by elevation ofsource/drain regions

Deep submicron MOSFETs with elevated source/drain (S/D) structures, where S/D extension regions were partially elevated besides deep S/D regions, were fabricated by use of Si selective epitaxial growth technique. As fairly compared with a well-developed conventional MOSFET, we clarify an advantage of the elevated S/D structures, i.e., improvement upon driving performance with keeping excellent short-channel characteristics, which is enhanced for decrease in gate sidewall spacer width. The experimental results are explained in terms of the reduction in S/D parasitic resistance by addition of the Si epitaxial layer where the impurity profile is suitable     

Pixel design of pulsed CMOS image sensor for retinal prosthesis with digital photosensitivity control

A newly designed pulse frequency modulation photosensor for use in retinal prosthesis is proposed and demonstrated. The pixel converts the intensity of incident light into biphasic current pulses at frequencies suitable for the electrical stimulation of retinal neurons. Experimental results showed that the device was sensitive over a dynamic range of input light of about 120 dB, and that photosensitivity could be varied from 0 dB to around -40 dB.     

Junction capacitance reduction due to self-aligned pocketimplantation in elevated source/drain NMOSFETs

A new advantage of an elevated source/drain (S/D) configuration to improve MOSFET characteristics is presented. By adopting pocket implantation into an elevated S/D structure which was formed by Si selective epitaxial growth and gate sidewall removal, we demonstrate that the parasitic junction capacitance as well as the junction leakage was significantly reduced for an NMOSFET while maintaining its good short channel characteristics. These successful results are attributed to the modification of the boron impurity profile in the deep S/D regions. The capacitance reduction rate, furthermore, was more remarkable as the pocket dose was further increased. This means that the present self-aligned pocket implantation is very promising for future MOSFETs with a very short gate length, where high pocket dosage will be required to suppress the short channel effect     

The measurement of hydrogen activities in molten copper using an oxide protonic conductor

We have developed a hydrogen sensor for in situ measurements of hydrogen activities in molten copper. The sensor consists of a concentration cell utilizing a proton conductor, CaZr_0.9In_0.1O_3-δ, as the solid electrolyte. The electromotive force (emf) of the cell was generated by both hydrogen and oxygen activity gradients across the cell in a high-temperature region simulating the fire refining processes of copper. However, accurate hydrogen activity in molten copper could be evaluated from the emf if oxygen activity in molten copper was determined simultaneously by another concentration cell and if the hydrogen and the oxygen activities at the reference electrode were known. The performance of the sensor was studied under various conditions. The observed good response and reliability of the sensor show that it should be a powerful tool for improvement of the fire refining process of the molten copper. Theoretical treatment of the calculation of the emf of the concentration cells using a mixed ionic conductor, i.e., protonic and oxide ionic conductor, as solid electrolytes is also discussed briefly.     

Experimental study on the thermoelastic martensitic transformation in shape memory alloy polycrystal induced by combined external forces

Combined tension and torsion experiments with thin wall specimens of Cu-Al-Zn-Mn polycrystalline shape memory alloy (SMA) were performed at temperatureT =A _f + 25 K. The general stress-strain behaviors due to the thermoelastic martensitic transformation, induced by a combination of external forces of axial load and torque, were studied. It is shown that the progress of martensitic transformation (MT) at general stress conditions can be well considered as triggered and controlled by the supplied mechanical work (a kind of equivalent stress) in the first approximation. Pseudoelastic strains in proportional as well as nonproportional combined tension-torsion loadings were found fully reversible, provided that uniaxial strains were reversible. The axial strain can be controlled by the change of torque andvice versa due to the coupling among tension and torsion under stress, not only in forward transformation, but also in reverse transformation on unloading. The pseudoelastic strains of SMA polycrystal are path dependent but well reproducible along the same stress path. The evolution of macroscopic strain response of SMA polycrystal, subjected to the nonproportional pseudoelastic loading cycles with imposed stress path, was systematically investigated. The results bring qualitatively new information about the progress of the MT in SMA polycrystal, subjected to the general variations of external stress. PETR SITTNER, Research Associate, formerly with the Faculty of Engineering, Mie University     

DLTS Studies of Neutron Camage in P-Type Silicon

Damage produced in p-type silicon by neutron irradiation at room temperature was studied by deep-level transient spectroscopy (DLTS). The production of three defects (Ev + 0.15, Ev + 0.34 and Ev + 0.45 eV) by neutron irradiation and the formation of two defects (Ev + 0.25 and Ev + 0.21 eV) during annealing were reported. It was found that many properties of the neutron damage were similar to those of the electron damage obtained by other works as far as the DLTS measurements are concerned. The DLTS measuements indicated no evidence for the production of defect clusters in the neutron damage. By comparing with the results previously obtained by the Hall effect measurements, it was found that the DLTS measurements mainly evaluated the properties of the point defects outside the clusters. The fact that the DLTS measurements did nto reflect the properties fo the defect clusters was ascribed to the reduction of majority carrier capture by defects inside the clusters due to the potential barrier formed by the cluster-space-charge regions.     

Real-Time Amplitude and Phase Imaging of Optically Opaque Objects by Combining Full-Field Off-Axis Terahertz Digital Holography with Angular Spectrum Reconstruction

Terahertz digital holography (THz-DH) has the potential to be used for non-destructive inspection of visibly opaque soft materials due to its good immunity to optical scattering and absorption. Although previous research on full-field off-axis THz-DH has usually been performed using Fresnel diffraction reconstruction, its minimum reconstruction distance occasionally prevents a sample from being placed near a THz imager to increase the signal-to-noise ratio in the hologram. In this article, we apply the angular spectrum method (ASM) for wavefront reconstruction in full-filed off-axis THz-DH because ASM is more accurate at short reconstruction distances. We demonstrate real-time phase imaging of a visibly opaque plastic sample with a phase resolution power of λ/49 at a frame rate of 3.5 Hz in addition to real-time amplitude imaging. We also perform digital focusing of the amplitude image for the same object with a depth selectivity of 447 μm. Furthermore, 3D imaging of visibly opaque silicon objects was achieved with a depth precision of 1.7 μm. The demonstrated results indicate the high potential of the proposed method for in-line or in-process non-destructive inspection of soft materials.     

Impact of Security/AAA on Intelligent Transport Systems

On-demand type DSRC (Dedicated Short Range Communication) system is one of the future target RVC (Road-to-Vehicle Communication) system in ITS (Intelligent Transport Systems). This paper investigates the permissible range of contents download volume focusing on the duration time of vehicle passage thought a spot and the download time of contents in addition to authentication process time. It is clarified that the most priority technical issue is the realization of the real-time characteristics in the On-demand type DSRC system.     

Plasma-tolerant structure for organic light-emitting diodes with aluminum cathodes fabricated by DC magnetron sputtering: Using a Li-doped electron transport layer

We fabricate aluminum cathodes that are almost free from plasma damage by DC magnetron sputtering for organic light-emitting diodes (OLEDs). While sputtering is widely known to have numerous advantages over conventional evaporation for mass production of devices, it can cause serious damage to organic layers. In this report, we fabricate devices that are free from plasma damage by introducing a 1%-Li-doped electron transport layer (ETL). The difference of external electroluminescence quantum efficiency between OLEDs with the structure ITO/α-NPD/ETL/Al (where ITO is indium tin oxide and α-NPD is N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine) with Al cathodes deposited by conventional evaporation or sputtering is 0.1%, and their driving voltage is identical. We find that the Li-doped ETL should be thicker than 40 nm. Analysis of the depth profile of the ETL by time-of-flight secondary ion mass spectrometry indicates that considerable damage from sputtering extended to a depth of approximately 30 nm, suggesting that high-energy particles penetrated about 30 nm into the ETL.     

Freeze-dried solid foams prepared from carbon nanotube aqueous suspension: Application to gas diffusion layers of a proton exchange membrane fuel cell

Freeze-dried macroporous solid foams were prepared from the multi-walled carbon nanotube (MWCNT) aqueous suspensions dispersed by chitosan. Thin film shaped CNT solid foams were prepared, and applied to the gas diffusion layers (GDLs) of a laboratory scale proton exchange membrane fuel cell (PEMFC). It was demonstrated that the prepared carbon foams in this study were useful to a fuel cell GDL material. The prepared cell performances were fairly comparable to the cell prepared with conventional carbon paper for GDL material. The microstructures of the prepared carbon foams were found to affect on the PEMFC performances. It was suggested that the interconnected carbon networks formed during the freezing step closely link to the cell performances. Hence, the defection of the interconnected microstructure lead degradation of the GDL quality. The impedance measurement made clear that the prepared foam materials were also advantageous for reducing the ohmic resistance in PEMFC assembly. The kinetic resistance values and the thermal conductive characteristics suggested that the freezing process would also control the degree of overlaps among single CNTs in a freeze-dried bulk that influenced on the electrochemical properties.