电梯缓冲器复位时间测试仪的传感器电路设计

在检验电梯时,一般情况下检验人员都是用人眼来判断缓冲器复位时间的,这时都需要检测人员蹲在电梯轿厢坑底,这样对检验人员来说环境是很差的,而且又是很危险,检测结果也是很不准确的。本文就介绍一实用方便的电梯缓冲器测试仪传感器的电路,它利用光电开关来检测轿厢和缓冲器脱离信号,进而得到触发电压,并且通过外接555斯密特触发器来转换电平,然后通过接口把信号送进微处理器来判断缓冲器复位时间。     

MCMC粒子滤波算法研究及应用

粒子滤波算法是一种基于贝叶斯估计的蒙特卡罗方法,适用于非线性非高斯系统的分析,被广泛应用于跟踪、定位等问题的研究中。为了解决粒子滤波算法在重采样后,丧失粒子多样性的问题,本文在粒子滤波算法的重采样步骤后,加入了马尔可夫链蒙特卡罗（Markov Chain Monte Carlo,简称MCMC）移动步骤,增加粒子的多样性。利用粒子滤波算法和MCMC粒子滤波算法对目标跟踪问题进行了仿真,并且通过分析仿真实验结果,比较了两种算法的性能,结果说明加入MCMC粒子滤波算法的性能优于粒子滤波算法。     

激光驱动离子加速的研究进展及其重要应用综述

随着激光技术的不断发展,特别是啁啾脉冲放大技术被提出以来,超强激光脉冲驱动的离子加速研究逐渐吸引了国内外科学家们的广泛关注,在离子能量提升、发散角控制和单能性提高等方面相继取得一系列重要进展。由激光与等离子体相互作用产生的离子束具有能量高、脉宽窄和方向性好等特点,具有许多潜在应用。本文通过回顾激光驱动离子加速的研究历程,对离子加速的主要作用机制、基本理论模型、数值模拟和实验研究等进行详细的阐述,同时对激光驱动离子加速的重要应用进行归纳总结。最后根据当前国内外大型激光装置的发展趋势,对极端光场中的离子加速进行展望。     

非故意掺杂吸收层InP/InGaAs异质结探测器研究

为了获得低噪声铟镓砷（InGaAs）焦平面,需要采用高质量的非故意掺杂InGaAs（u-InGaAs）吸收层进行探测器的制备。采用闭管扩散方式,实现了Zn元素在u-InGaAs吸收层晶格匹配InP/In_0.53Ga_0.47As异质结构材料中的P型掺杂,利用扫描电容显微技术(SCM)对Zn在材料中的扩散过程进行了研究,结果表明,随着扩散温度和时间增加,p-n结结深显著增加,u-InGaAs吸收层材料的扩散界面相比较高吸收层浓度材料（5×1016 cm?3）趋于缓变。根据实验结果计算了530 ℃下Zn在InP中的扩散系数为1.27×10?12 cm2/s。采用微波光电导衰退法(μ-PCD)提取了InGaAs吸收层的少子寿命为5.2 μs。采用激光诱导电流技术(LBIC)研究了室温下u-InGaAs吸收层器件的光响应分布,结果表明:有效光敏面积显著增大,对实验数据的拟合求出了少子扩散长度L_D为63 μm,与理论计算基本一致。采用u-InGaAs吸收层研制的器件在室温(296 K)下暗电流密度为7.9 nA/cm2,变温测试得到激活能E_a为0.66 eV,通过拟合器件的暗电流成分,得到器件的吸收层少子寿命τ_p约为5.11 μs,与微波光电导衰退法测得的少子寿命基本一致。     

Rational Designs for Lithium-Sulfur Batteries with Low Electrolyte/Sulfur Ratio

Lithium-sulfur batteries (LSBs) are considered a promising next-generation energy storage device owing to their high theoretical energy density. However, their overall performance is limited by several critical issues such as lithium polysulfide (PS) shuttles, low sulfur utilization, and unstable Li metal anodes. Despite recent huge progress, the electrolyte/sulfur ratio (E/S) used is usually very high (≥20 µL mg⁻¹), which greatly reduces the practical energy density of devices. To push forward LSBs from the lab to the industry, considerable attention is devoted to reducing E/S while ensuring the electrochemical performance. To date, however, few reviews have comprehensively elucidated the possible strategies to achieve that purpose. In this review, recent advances in low E/S cathodes and anodes based on the issues resulting from low E/S and the corresponding solutions are summarized. These will be beneficial for a systematic understanding of the rational design ideas and research trends of low E/S LSBs. In particular, three strategies are proposed for cathodes: preventing PS formation/aggregation to avoid inadequate dissolution, designing multifunctional macroporous networks to address incomplete infiltration, and utilizing an imprison strategy to relieve the adsorption dependence on specific surface area. Finally, the challenges and future prospects for low E/S LSBs are discussed.     

Organic Synaptic Transistors: The Evolutionary Path from Memory Cells to the Application of Artificial Neural Networks

The progress of neural synaptic devices is experiencing an era of explosive growth. Given that the traditional storage system has yet to overcome the von Neumann bottleneck, it is critical to develop hardware with bioinspired information processing functions and lower power consumption. Transistors based on 2D materials, metal oxides, and organic materials have been adopted to mimic the synapse of a human brain, due to their high plasticity, parallel computing, integrated storage, and system information processing. Among these materials used to build transistors, organic semiconductors are considered to be the most promising candidate for neural synaptic devices and bio-electronics, owing to their easy processing, mechanical flexibility, low cost, good bio-compatibility, and ductility. This review focuses on the recent advances in organic synaptic devices with various structures, materials, and working mechanisms. The applications of artificial neural networks that integrate multiple organic synaptic transistors are also concretely discussed. Finally, the challenges that organic synaptic devices currently face are discussed and future developments are forecast.     

室内分布发射天线STBC系统的发射天线位置优化

该文针对室内环境下分布发射天线STBC系统,在考虑了路径损耗、阴影衰落和莱斯衰落的基础上推导了室内的平均误符号率(AASER),通过使室内的平均误符号率最小得到了优化的发射天线位置。理论分析表明最优的发射天线位置与房间的长、宽、高以及移动台的高度有关。仿真结果验证了理论分析的正确性。     

An InGaP/GaAs Merged HBT-FET (BiFET) Technology and Applications to the Design of Handset Power Amplifiers

The last decade has seen GaAs HBTs emerge as the dominant technology in wireless handset power amplifiers. Modern application requirements and size limitations have driven industry leaders towards the co-integration of depletion mode n-FET and GaAs HBT. The merger of Bipolar and FET, or BiFET, gives an additional degree of freedom in the design of advanced power amplifiers independent of a silicon controller. This paper provides an overview of the various techniques that can be used to join the two device technologies and then shows how a merged epitaxial structure, where an FET is formed in the emitter layers of an HBT, combines functional versatility with the high volume manufacturability needed to supply millions of power amplifiers at low cost. A large-signal model of the FET structure is developed which takes into account the unique physics and geometries of the device, including voltage-dependant parameters and charges on all four electrical terminals. Specific handset applications that can benefit or be enabled by BiFET are presented, such as on-off switching, low voltage bias controllers , Auto-Bias power amplifiers, and bias circuits with low or no voltage reference. When npn-only bias circuitry is limited to low voltage reference levels, HBT power amplifiers with BiFET bias stages are shown to have superior RF performance to their npn-only counterparts.     

Novel transmitter of dark RZ signal based on external modulator

A novel transmitter to generate a dark RZ signal with tunable duty cycle and extinction ratio is proposed, by modifying the process of precoding, modulating and coding. A dark RZ signal is generated simply by using one dual-arm Mach-Zehnder LiNbO3 modulator. We demonstrate experimentally that this optical dark RZ signal can be directly measured by a conven- tional binary intensity modulation direct detection (IM-DD) receiver. When different values of duty cycles at 2.5 Gbit/s are adjusted, the experimental results show different BER curves and eye diagrams of the optical dark RZ signal.     

单脉冲导引头对多干扰源的角分辨

当多个噪声调频干扰同时进入单脉信号引头主波束内时，导引头对干扰源的角度分辨是非常困难的。本文主要研究了导引头单脉冲接收机对宽带噪声调频干扰源的响应，分析了当单脉冲主波束内存在多个噪声调频干扰源时，导引头指向角的跟踪规律，并重点讨论了一种用聚类来提取角信息的方法，最后仿真证实了该方法的正确性和有效性。