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21.
O. A. Lambri J. I. Prez-Landazbal J. A. Cano V. Recarte 《Materials Science and Engineering: A》2004,370(1-2):459-463
Mechanical spectroscopy, neutron diffraction and differential scanning calorimetry (DSC) were performed on commercial Fe–6 wt.% Si alloy after quenching from high temperature. The damping spectrum shows a peak at around 800 K and an associated modulus defect. The modulus shows an increase during the second and subsequent heating runs. In addition, an anomaly in the modulus behavior has been found at around 400 K. Different thermal treatments allows to obtain two different recovery degrees of the quenched-in defects. The influence of the recovery degree on the 800 K internal friction peak and on the anelastic modulus has been evaluated and confirm the validity of the grain boundary mechanism associated to this peak. Experimental results are discussed on the basis of recovery and ordering processes. 相似文献
22.
Valentian A. Thomas O. Vladimirescu A. Amara A. 《Very Large Scale Integration (VLSI) Systems, IEEE Transactions on》2004,12(6):662-669
A simple, yet realistic physics-based model is introduced to describe the subthreshold drain current of a MOSFET taking into account the body- and drain-voltage dependencies, including the short channel effects. This model, verified by SPICE simulations, describes adequately the pseudotriode and pseudosaturation regions of MOS transistors operated below V/sub T/. It can be applied for predicting bulk- or partially depleted (PD) SOI CMOS circuit operation. Analytical expressions derived for the logic switching threshold and delay are applied to predict the performance of CMOS-SOI inverters. 相似文献
23.
陈冬梅 《电子产品可靠性与环境试验》2003,(2):61-65
概要介绍了科学的管理技术——项目管理方法,讨论了管理跨度在项目管理中的重要性,并推荐了如何了解管理跨度的方法。 相似文献
24.
Algebraic theory of optimal filterbanks 总被引:1,自引:0,他引:1
We introduce an optimality theory for finite impulse response (FIR) filterbanks using a general algebraic point of view. We consider an admissible set /spl Lscr/ of FIR filterbanks and use scalability as the main notion based on which performance of the elements in /spl Lscr/are compared. We show that quantification of scalability leads naturally to a partial ordering on the set /spl Lscr/. An optimal solution is, therefore, represented by the greatest element in /spl Lscr/. It turns out that a greatest element does not necessarily exist in /spl Lscr/. Hence, one has to settle with one of the maximal elements that exist in /spl Lscr/. We provide a systematic way of finding a maximal element by embedding the partial ordering at hand in a total ordering. This is done by using a special class of order-preserving functions known as Schur-convex. There is, however, a price to pay for achieving a total ordering: there are infinitely many possible choices for Schur-convex functions, and the optimal solution specified in /spl Lscr/ depends on this (subjective) choice. An interesting aspect of the presented algebraic theory is that the connection between several concepts, namely, principal component filterbanks (PCFBs), filterbanks with maximum coding gain, and filterbanks with good scalability, is clearly revealed. We show that these are simply associated with different extremal elements of the partial ordering induced on /spl Lscr/ by scalability. 相似文献
25.
It is demonstrated that the density of binary glasses upon variation of the molar content of the modifier in their compositions obeys a parabolic dependence, whose parameters can be used to estimate the extent and type of reactions between the components. The reaction parameters in glasses that are prone to liquation are lower by an order of magnitude and have the negative sign. 相似文献
26.
A new process for solid phase crystallization (SPC) of amorphous silicon (a-Si) using thin film heater is reported. With this localized Ti silicide thin film heater, we successfully crystallized 500 Å-thick a-Si in a few minutes without any thermal deformation of glass substrate. The size of crystallized silicon grain was abnormally big (30-40 μm). Polycrystalline thin film transistors (TFT) fabricated using this unique thin film heater showed better mobility than those of conventional ones by furnace annealing. 相似文献
27.
Previously unknown compounds AI
I(BUO5)2·nH2O (AI
I = Mg, Ca, Sr, Ba; n = 0-7) were synthesized. Their structure and thermal decomposition were studied by X-ray diffraction, IR spectroscopy, and thermal analysis. 相似文献
28.
On the synergy between electrical and photonic switching 总被引:1,自引:0,他引:1
This article focuses on the values of electrical switching vs. photonic switching in the context of telecom transport networks. In particular, we show that the requirement of providing agility at the optical layer in the face of traffic forecast uncertainties is served better through photonic switching. On the other hand, some of the network-level functions, such as fast protection, subwavelength aggregation, and flexible client connectivity, require electrical switching. We further argue that additional values are achieved with hybrid photonic and electrical switching, which do not exist when either of these options is used in isolation. 相似文献
29.
A.S. Fomichev I. David S.M. Lukyanov Yu.E. Penionzhkevich N.K. Skobelev O.B. Tarasov 《Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment》1994,350(3):605-607
The mass and charge identification of secondary particles with Z < 4 by a large CsI(T1) scintillation detector is performed using pulse shape analysis and time-of-flight methods. The dependence of the light output on E, A and Z is studied in the energy range of 1–20 MeV/A and special attention is paid to the integration time of the photomultiplier anode signal. It is found that the behaviour of the calibration curves strongly depends on the choice of the integration time interval. 相似文献
30.
Serum vanadium, aluminum, silicon and beta 2-microglobulin levels as well as the red cell count, hemoglobin and systolic blood pressure were simultaneously measured in 80 chronic hemodialysis patients. The serum vanadium level was positively correlated with the serum levels of aluminum, silicon and beta 2-microglobulin as well as the systolic blood pressure, and was inversely correlated with the red cell count and hemoglobin. The mean serum vanadium level was 18.4 +/- 7.6 ng/ml before hemodialysis and decreased to 13.0 +/- 5.30 ng/ml at the completion of dialysis. The dialysate vanadium level increased from 0.4 +/- 0.2 (inflow) to 1.0 +/- 0.4 ng/ml (outflow). It was concluded that vanadium was transferred from blood to dialysate when purified water was used in the preparation of the dialysate. 相似文献