In search of therapeutic nursing: subacute care

A form of 'intermediate' care exists in the USA which parallels the work of nurse-led units in the UK. This article describes subacute care, the term used for in-patient facilities for post-operative care and rehabilitation, and looks at its application in the USA. The work of such units is detailed and compared with similar units in the UK.     

Oxidation of TiAl based intermetallics

The high temperature oxidation behaviour of the binary and ternary alloys of the Ti–48Al system was studied at different temperatures. The primary objectives of this work were the establishment of the activation energies, the migration tendencies of the alloy species, mechanism of oxidation and chemistry of the oxide scales. The ternary additions were Cr (1.5 at 19%), V (2.2 at%), W (0.2 at%) and Mn (1.4 at%). The addition of ternary additions did not play a significant role in the oxidation behaviour at 704°C. At 815°C the alloys with Cr and V exhibited linear oxidation behaviour with large weight gains while the base Ti–48Al alloys exhibited the best behaviour. At 982°C the Mn-containing alloy was the worst, exhibiting a linear oxidation behaviour while the alloy with V and W and the base alloy with 400 p.p.m. oxygen exhibited the best oxidation behaviour. At 982°C the outermost oxide layer in contact with air is always near stoichiometric TiO₂. In all the alloys a layer of porosity is created just below the outer TiO₂ layer by the Kirkendall mechanism due to the rapid outward diffusion of Ti atoms. The addition of trivalent atoms like Cr in small amounts appear to be detrimental to the oxidation process as they can generate additional oxygen vacancies while the addition of atoms with valence of 5, such as V, and 6, such as W, appear to have beneficial effect on the oxidation behaviour at 982°C by tying up oxygen vacancies. This revised version was published online in November 2006 with corrections to the Cover Date.     

Low-threshold single-quantum-well InGaAs/GaAs lasers grown bymetal-organic chemical vapor deposition on structure substrates

Low-threshold current (as low as 3.0 mA) and high-external efficiency (≈88%) InGaAs/GaAs lasers emitting at 1 μm under a stable fundamental transverse mode were obtained by using the temperature engineered growth technique for the growth on prepatterned substrates     

Ultrathin oxide-nitride dielectrics for rugged stacked DRAMcapacitors

Ultrathin dielectric materials that provide high capacitance values are needed for 64- and 256-Mb stacked DRAMs. It is shown that capacitance values as high as 12.3 fF/μm² can be obtained with ultrathin nitride-based layers deposited on rugged polysilicon storage electrodes. These films present the reliability and low leakage current levels required for 3.3-V applications. The nitride thickness, however, cannot be scaled much below 6 nm to avoid the oxidation-punchthrough mechanisms that appear when too-thin films are unable to withstand the reoxidation step     

Use of a doubly polarized laser for remote powering of anintegrated optical modulator

Stable operation of an integrated optic modulator is demonstrated using a 1.3 μm doubly polarized laser as a depolarized source in conjunction with a long run of ordinary fiber. The laser is found to be unusually susceptible to feedback due to gain competition between the polarization modes. The resulting low-frequency polarization noise is significantly reduced by the addition of fiber isolators to the system     

Accurate conductor Q-factor of dielectric resonator placed in anMIC environment

The unloaded Q-factor of a dielectric resonator is degraded due to conductor loss when it is placed in an MIC environment. The authors report approximate but quite accurate closed form expressions for the Q-factor due to conductor loss. The results obtained are in good agreement with those of rigorous numerical methods. The effect of geometrical parameters on the useful tuning range of the structure is studied. Finally, an explicit relationship between the resonant frequency sensitivity factors and the conductor Q-factor is derived