Phase Transition VO2 Thin Films for Optical Switches

This paper presents a method to make vanadium dioxide (VO₂) crystallites on silicon substrates by reactive ion beam sputtering. The thickness of the thin film is about 100nm. The phase transition temperature of VO₂ is 65°C. The transmittance of the semiconducting phase VO₂ is about 50% and it is reduced to as low as 3% in metal phase at the infrared wavelenghth spectrum. The extinction ratio of the optical switches is 12dB. and the insertion loss is of 1-2dB. The switching time is about 1ms.     

水轮发电机定子浮动式双鸽尾筋调整工艺浅析

水轮发电机定子采用浮动式双鸽尾筋是当今设计上较为先进的结构,是防止定子铁心变形的重要措施之一,制造厂一般会提供安装调整的工艺措施,但此工艺措施更多的是检查的标准,对如何具体操作不够详细,安装调整完全依靠施工人员的经验进行。如何有针对性的分析调整工艺中的难点和易忽略点,提出更具指导性的调整工艺,成为了一个需研究的课题。     

Parathion degradation and toxicity reduction in solar photocatalysis and photolysis.

The solar photocatalytic degradation of methyl parathion was investigated using a circulating TiO2/solar light reactor. Under solar photocatalysis condition, parathion was more effectively degraded than solar photolysis and TiO2-only conditions. With solar photocatalysis, 20 mg/L of parathion was completely degraded within 60 min with a TOC decrease of 63% after 150 min. The main ionic byproducts during photocatalysis recovered from parathion degradation were mainly as NO3-, NO2- and NH4+, 80% of the sulphur as SO4(2-), and 5% of phosphorus as PO4(3-). The organic intermediates 4-nitrophenol and methyl paraoxon were also identified, and these were further degraded in solar photocatalytic condition. Two different bioassays (Vibrio fischeri and Daphnia magna) were used to test the acute toxicity of solutions treated by solar photocatalysis and photolysis. The Microtox test using V. fischeri showed that the toxicity expressed as EC50 (%) value increased from 5.5% to >82% in solar photocatalysis, indicating that the treated solution is non-toxic, but only increased from 4.9 to 20.5% after 150 min in solar photolysis. The acute toxicity test using D. magna showed that EC50 (%) increased from 0.05 to 1.08% under solar photocatalysis, but only increased to 0.12% after 150 min with solar photolysis, indicating the solution is still toxic. The pattern of toxicity reduction parallels the decrease in TOC and the parathion concentrations.     

Computer modeling of the continuous annealing furnace

A computer program to calculate the strip temperature heated in the continuous annealing furnace was developed, using the zone method for radiative heat transfer analysis with the measured gas temperature in the furnace. Using theF _E Operator, the present study considered the effects of soot and transient species, in addition to the H₂O−CO₂ gas mixture on the gas radiative heat transfer. The predicted strip temperature distribution forF _E=1.05 represented well the measured data. The maximum difference in the heat flux transfered to the strip from the combustion gas forF _E=1.0 (without soot and transient species gas radiation) and 1.05 (with soot and transient species gas radiation) was about 15%. The present study also investigated the effects of line speed and thickness variations on the strip temperature, establishing the bases for the on-line computer model.     

Effect of surface-modifying macromolecules and solvent evaporation time on the performance of polyethersulfone membranes for the separation of chloroform/water mixtures by pervaporation

Polyethersulfone (PES) membranes using different evaporation periods were fabricated by the phase-inversion method. Pervaporation experiments were conducted for chloroform/water mixtures to determine the selectivity of the PES membranes. It was found that chloroform could be concentrated in the permeate from chloroform/water binary feed mixtures by PES membranes prepared using longer evaporation periods, and that the selectivity of PES membranes in pervaporation could be reversed by shorter evaporation periods. This study also showed that by adding surface-modifying macromolecules (SMM) up to 1 wt % into the casting solution, chloroform enrichment in the permeate could be increased by 50%. Chloroform enrichment increased with increasing SMM concentration until an optimal value, after which the enrichment decreased. © 1994 John Wiley & Sons, Inc.     

流场拟合法在缩微环境中的研究

流场拟合法是由何继善院士提出的物理探测技术。以流场拟合法为理论基础研制的管涌渗漏检测仪在堤坝检测及抗洪抢险中发挥了重要作用，本文提出了一种在缩微环境中模拟管涌渗漏，对流场拟合法进行模拟测试并获得了明显的结果。为管涌仪器的性能检测、校验、标定提供了便捷的测试方法，并为该仪器在生产过程中统一性能和企业标准的制订提供了理论依据。     

A quantitative method for evaluating the performances of hyperspectral image fusion

Hyperspectral image fusion is a key technique of hyperspectral data processing. In recent years, many fusion methods have been proposed, but there is little work concerning evaluation of the performances of different image fusion methods. In this paper, a method called quantitative correlation analysis (QCA) is proposed, which provides a quantitative measure of the information transferred by an image fusion technique into the output image. Using the proposed method, the performances of different image fusion methods can be compared and analyzed directly based on the images of before and after performing the fusion. The correlation information entropy, based on the developed QCA, is also proposed and testified by numerical simulations. Typical hyperspectral data are applied to the proposed method. The results show that the method is effective, and its conclusions agree with the classification results in applications.     

多层复合膜的成型技术

阐述了用AutoLisp程序模拟塑料熔体在2层复合膜机头内的流动情况，并介绍了复合膜机头的内部结构。     

发电机同轴励磁机电刷火花过大的原因及处理方法

本文对发电机同轴励磁机电刷火花过大的原因进行了分析．并针对这些原因提出了相应的处理办法。对规范励磁机的运行维护有很大的帮助。     

P-channel Ge/Si Hetero-nanocrystal Based MOSFET Memory

The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide T_ox=2nm and the dimensions of Si- and Ge-nanocrystal D_Si=D_Ge=5nm, the retention time of this device can reach ten years(~1×10~8s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage |V_g|=3V with respect to N-wells, respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature, is desired to obtain application in future VLSI.