用磁场传感器KMZ52设计的电子指南针

介绍了目前用于定位系统中的电子指南针的工作原理，详细论述了磁场传感器芯片KMZ52的工作原理，给出了用KMZ52磁场传感器设计电子指南针的总体设计方案和电路，同时给出了设计中的一些特殊处理方法。     

一种通过改变激光功率密度分布控制熔覆层裂纹的方法

为了降低激光熔覆过程中熔覆层热应力从而减少裂纹的生成,提出了一种通过改变激光功率密度分布来控制熔覆层裂纹的方法,并用数值模拟的方法对均布及凸字形光斑熔覆过程进行了热力耦合有限元分析。结果表明,用均布光斑熔覆呈现出激光加工典型的快速加热、快速冷却特征,而采用凸字形光斑可在一定程度上起到预热、缓冷的效果,从而降低了熔覆区与非熔覆区的温度梯度,另外,在熔覆效果相当的前提下,其熔覆层热应力也较小,因而可以有效地减小熔覆层的开裂趋势。     

激光来袭方向探测与告警系统的设计

为了探测敌方激光的来袭方向,开发了一种激光脉冲方向告警系统.该系统由光学模块、信号处理模块和显示模块组成,其探测范围为水平方向0°～360°,垂直方向0°～90°,角度分辨率30°,识别出波长为0.85,1.06和1.54 μm,脉宽不小于10ns的激光脉冲,探测功率密度下限为1 mW/cm2,其探测概率达到98%以上...     

Longitudinal Wave Propagation in Dielectric Waveguide Array

Based on the established rigorous theory for two-dimensionally periodic (2DP) medium, Longitudinal propagation in Dielectric Waveguide Array (DWA) was analyzed in detail. Firstly, given longitudinal wave vector (k _z), Brillouin dispersion relations between transversal wave vectors were analyzed. Interactions between space harmonics were also studied. Secondly, on condition that transversal wave vector k _x equaled k _y, dispersion relations between longitudinal and transversal wave vectors were analyzed in detail. Because of interactions between space harmonics increasingly getting stronger with k _z or modulation coefficients increasing, stop-bands could be distinctly displayed and thus longitudinal propagation in DWA could be comprehensively analyzed. The applications about longitudinal propagation in DWA were also discussed.     

表面注入D-RESURF器件耐压模型

建立表面注入双重降低表面电场(D-RESURF)结构击穿电压模型。D-RESURF器件在衬底纵向电场和Pb区附加电场的影响下,漂移区电荷共享效应增强,优化漂移区掺杂浓度增大,器件导通电阻降低。分析漂移区浓度和厚度对击穿电压的影响,获得改善击穿电压和导通电阻折中关系的途径。在满足最优表面电场和完全耗尽条件下,导出吻合较好的二维RESURF判据。在理论的指导下,成功研制出900 V的D-RESURF高压器件。     

低损伤ICP刻蚀技术提高GaN LED出光效率

首先分析了在制作GaN基LED时,采用干法刻蚀技术会对材料的表面和量子阱有源区造成损伤,影响了GaN基LED的内量子效率。针对这个问题,研究实验采用感应耦合等离子反应刻蚀(ICP-RIE)技术,分别选择了氯气/三氯化硼(Cl2/BCl3)气体体系和氯气/氩气(Cl2/Ar)气体体系,通过优化射频功率、ICP功率、气体流量以及相应的真空度,得到了良好的刻蚀端面,对于材料造成的损伤较低,得到更好的I-V特性。实验结果表明,采用低损伤的偏压功率刻蚀后制作的LED器件,出光功率提升一倍以上,同时采用Cl2/Ar气体体系,改善了器件的I-V特性,有效提高了LED的出光效率。     

Phototunable Underwater Oil Adhesion of Micro/Nanoscale Hierarchical‐Structured ZnO Mesh Films with Switchable Contact Mode

Controllable surface adhesion of solid substrates has aroused great interest both in air and underwater in solving many challenging interfacial science problems such as robust antifouling, oil‐repellent, and highly efficient oil/water separation materials. Recently, responsive surface adhesion, especially switchable adhesion, under external stimulus in air has been paid more and more attention in fundamental research and industrial applications. However, phototunable underwater oil adhesion is still a challenge. Here, an approach to realize phototunable underwater oil adhesion on aligned ZnO nanorod array‐coated films is reported, via a special switchable contact mode between an unstable liquid/gas/solid tri‐phase contact mode and stable liquid/liquid/solid tri‐phase contact mode. The photo‐induced wettability transition to water and air exists (or does not) in the micro/nanoscale hierarchical structure of the mesh films, playing important role in controlling the underwater oil adhesion behavior. This work is promising in the design of novel interfacial materials and functional devices for practical applications such as photo‐induced underwater oil manipulation and release, with loss‐free oil droplet transportation.     

Preface to the Special Issue on Beyond Moore:Resistive Switching Devices for Emerging Memory and Neuromorphic Computing

Traditional charge-based memories,such as dynamic random-access memory(DRAM)and flash,are approaching their scaling limits.A variety of resistance-based memories,such as phase-change memory(PCM),magnetic random-access memory(MRAM)and resistive random-access memory(RRAM),have been long considered for emerging memory applications thanks to their non-volatility,fast speed,low power,and compact size for potentially high-density integration.     

Preface to the Special Issue on Beyond Moore:Three-Dimensional(3D)Heterogeneous Integration

In the past few decades,the Moore’s Law has been the revolutionary force for our integrated circuit(IC)industry.However,the tremendous challenges faced in continuous transistor physical down-scaling and the unprecedented demands for computing and storage capabilities require our urgent search for strategies and solutions to integrate diverse materials,devices,circuits,and architectures in a 3D vertically stacked manner so that they can orchestrate in the most effective way to provide significantly enhanced functionalities as well as superior speed,energy,bandwidth,form fact,and cost.     

Black phosphorus junctions and their electrical and optoelectronic applications

Black phosphorus(BP),an emerging two-dimensional material,is considered a promising candidate for next-genera-tion electronic and optoelectronic devices due to in-plane anisotropy,high mobility,and direct bandgap.However,BP devices face challenges due to their limited stability,photo-response speed,and detection range.To enhance BP with powerful electric-al and optical performance,the BP heterostructures can be created.In this review,the state-of-the-art heterostructures and their electrical and optoelectronic applications based on black phosphorus are discussed.Five parts introduce the perform-ance of BP-based devices,including black phosphorus sandwich structure by hBN with better stability and higher mobility,black phosphorus homojunction by dual-gate structure for optical applications,black phosphorus heterojunction with other 2D materials for faster photo-detection,black phosphorus heterojunction integration with 3D bulk material,and BP via As-doping tunable bandgap enabling photo-detection up to 8.2 μm.Finally,we discuss the challenges and prospects for BP electric-al and optical devices and applications.