A closed form theory for calibrating a dual six-port networkanalyzer

The application of a general self-calibration procedure, the so-called TNA (through, network, attenuator) method, to a dual six-port network analyzer is presented for the first time. This innovation results from strictly separating the establishment of the complex measurement ability and the determination of the analyzers system error parameters. As will be seen, the well-known TRL (through, reflect, line) method is a special case of the general TNA technique     

Evaluation of the tensile and fatigue behaviourof a powder metallurgy beryllium/aluminium alloy

The tensile and fatigue behaviour of a powder metallurgy beryllium/aluminium alloy produced by Brush Wellman (Albemet 562) is determined as a function of temperature. The material is shown to have very high stiffness/density compared with common structural materials and moderate strength up to 232°C. The mechanical properties of the material do not vary significantly as a function of orientation for the extruded plate evaluated in this study. The stiffness of the material can be readily explained using standard composite theory, where the material is treated as a beryllium particle-reinforced aluminium matrix composite. To explain the observed strength levels, a combination of microstructural-based dislocation strengthening mechanisms is proposed to act in combination with continuum mechanics strengthening based on load transfer. Failure analysis reveals that the aluminium regions of the material fail in a ductile dimple fashion, while the beryllium regions exhibit a more brittle cleavage type failure. Fatigue failure was found to initiate at inclusions present in the material, but is still very high relative to conventional aluminium alloys. This revised version was published online in November 2006 with corrections to the Cover Date.     

Application of neural networks and machine learning in networkdesign

Communication network design is becoming increasingly complex, involving making networks more usable, affordable, and reliable. To help with this, we have proposed an expert network designer (END) for configuring, modeling, simulating, and evaluating large structured computer networks, employing artificial intelligence, knowledge representation, and network simulation tools. We present a neural network/knowledge acquisition machine-learning approach to improve the END's efficiency in solving the network design problem and to extend its scope to acquire new networking technologies, learn new network design techniques, and update the specifications of existing technologies     

Densification involved in the UV-based photosensitivity of silicaglasses and optical fibers

A comprehensive survey of photosensitivity in silica glasses and optical fiber is reviewed. Recent work on understanding the mechanisms contributing to germanium or aluminum doped fiber photosensitivity is discussed within the framework of photoelastic densification models     

Digitally tunable optical filters using arrayed-waveguide grating(AWG) multiplexers and optical switches

Two novel configurations for digitally tunable optical filters based on arrayed-waveguide grating (AWG) multiplexers are described in detail with emphasis on the connection of the AWG multiplexer and optical switches. Performance comparisons show that conventional configurations are disadvantaged by the switch size required and loss imbalance among the optical frequency-division-multiplexed (FDM) channels; the proposed configurations require only O(√(N)) switch elements to select one of N FDM channels, and the loss imbalance is lower by up to 75% in decibel     

Automatic fault detection, isolation, and recovery in transparentall-optical networks

Network fault identification is an important network management function, which is closely related to fault management and has an impact on other network management functions such as configuration management, and performance management. This paper investigates fault surveillance and fault identification mechanisms for a transparent optical network in which data travels optically from the source node to the destination node without going through any optical-to-electrical (O/E) or electrical-to-optical (E/O) conversion. Mechanisms and algorithms are proposed to detect and isolate faults such as fiber cuts, laser, receiver, or router failures. These mechanisms allow nonintrusive device monitoring without requiring any prior knowledge of the actual protocols being used in the data transmission     

A new lateral MOS-gated thyristor with controlling base-current

A new lateral MOS-gated thyristor, called the Base-Current-Controlled Thyristor, is described. This device is designed so that most holes at the on-stage reach the P base through the floating P⁺ region adjacent to the P base and the on-state MOSFET. At the turn-off stage, the interruption of the hole current to the P base due to switching off the above MOSFET occurs simultaneously with the conventional turn-off operation. The concept of this device is verified experimentally by using the fabricated lateral device with the external MOSFET. This device exhibits a better trade-off relation between the on-state voltage and the turn-off time compared uith the conventional MOS-gated thyristor     

Series equivalence/operation of current-controlled boost-typesingle-phase voltage source converters for bidirectional power flow

Single-phase voltage source power converters (VSCs) under consideration are AC-DC current-controlled boost-type power converters with bidirectional power-handling capability. Equivalence between two series-connected two-level power converters and a single three-level power converter is considered here. Further considered is the series operation of three-level power converters. Simulation results and experimental verification for both are provided. Economical configurations of three-level power converters leading to multilevel waveforms are presented thereafter     

A wafer level monitoring method for plasma-charging damage usingantenna PMOSFET test structure

A novel monitoring method for plasma-charging damage is proposed. This method performs a quick and accurate evaluation using antenna PMOSFET. It was found that not only hot-carrier (HC) lifetime but transistor parameters such as initial gate current and substrate current were changed according to the degree of plasma-charging damage. However, the present work suggests that monitoring the shift of drain current after a few seconds of HC stress is a more accurate method to indicate plasma-charging damage. The monitoring method using the present test structure is demonstrated to be useful for realizing highly reliable devices