Cognitive impenetrability of memory for orientation.

This research produced evidence that an aspect of visual long-term memory—memory for lateral orientation of pictures—is constrained by a viewer-centered or egocentric reference frame. Subjects in Experiment 1 verbally encoded and then verbally recalled the locations of objects within scenic pictures. Recall of locations in terms of left-right directions (using a viewer-centered frame) exceeded recall of locations in terms of relative proximities to features of the room (using an environmental frame), even if the relative proximities had been verbalized at input. Subjects in Experiment 2 viewed half of a list of pictures directly and the remainder, reflected in a mirror. They then took a test in which they classified old pictures—all viewed directly— as "same-orientation" or "reversed." Performance was much better with a viewer-centered definition of same orientation (Does the picture appear the same way around?) than with an environmental definition (Is the picture the same way around on the screen?), even with forewarning of an environmental orientation test. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Execution cache-based microarchitecture for power-efficient superscalar processors

This paper investigates a possible solution to the problem of power consumption in superscalar, out-of-order processors by proposing a new microarchitecture, specifically designed to reduce increasing power requirements of high-end processors. More precisely, we show that by modifying the well-established superscalar processor architecture, significant savings can be achieved in terms of power consumption. Our approach aims at limiting the growing amount of power used in a typical processor for dynamic optimizations (including out-of-order scheduling and register renaming). Our proposed approach achieves significant power savings by reusing as much as possible from the work done by the front-end of a typical superscalar, out-of-order pipeline, via the use of a special cache nested deeply into the processor structure. By reusing instructions that are already decoded, reordered, and have their registers already renamed, the front end of the pipeline can be turned off for large periods of time with significant savings in the overall power consumption. Experimental results show up to 35% (30% on average) savings in average energy per committed instruction, and 35% (20% on average) savings in energy-delay product, with about 9% average performance loss, over a large spectrum of SPEC95 and SPEC2000 benchmarks.     

Associative properties of perfluorooctyl end‐functionalized polystyrene–poly(ethylene oxide) diblock copolymers

The synthesis of 2,2,3,3‐tetrahydro‐perfluoroundecanoyl end‐functionalized polystyrene–poly(ethylene oxide) block (PS‐block‐PEO‐R_F) copolymers and their matching PS‐block‐PEO diblock copolymers was carried out by sequential anionic polymerization. Viscometry and ¹⁹F NMR studies show that the PS‐block‐PEO copolymers, in contrast to their matching PS‐block‐PEO‐R_F copolymers, exhibit a micellar rather than the associative behavior seen for the latter. However, the presence of an excess of fluorinated acid, used for end‐functionalization, produces a reduction of the associative behavior above the overlap concentration, with the fluorinated acid acting like a surfactant. A competition may also occur between PS—and R_F—mediated micellization. Copyright © 2004 Society of Chemical Industry     

Bioeffects of Low Energy Ion-Beam Implantation and Vacuum Treatment on M1 Arabidopsis Thaliana

Vacuum treatment and ion-beam bombardment are two major processes in the low energy ion-beam implantation. To accurately study the contributions of these two major factors to the bioeffects separately, the M1 generation variation of Arabidopsis thaliana with ion-beam implantation and vacuum treatment were compared through a series of key plant development parameters including morphological observation, biochemical assay and RAPD （random amplified polymorphic DNA） analysis. The results showed that ion-beam implantation had obvious effect on almost all of these parameters, and the vacuum treatment had some impacts on several morphological parameters such as the bolting time and the length of the primary stem. Taking the results together, the indication is that vacuum treatment has some slight contributions to the bioeffects of ion-beam implantation while ion-beam bombardment itself is the major creator of the bioeffects.     

The nature and role of incoherent interphase interfaces in diffusional solid-solid phase transformations

In this article, some views on the nature of incoherent interphase interfaces, and their role in the nucleation and growth processes governing the evolution of microstructure in solid-state diffusional transformations (reconstructive transformations), are explored. It is argued that essentially incoherent interfaces can be involved in the initiation and propagation of polymorphic transformations and massive transformations as well as in various precipitation phenomena in metallic and ceramic systems. Similar views have already been advanced earlier in connection with studies of massive transformations. Faceting along the interphase interface during nucleation and growth can derive from thermodynamic, kinetic, and crystallographic factors independent of the bicrystallography of the conjugate phases. This idiomorphic behavior can be relevant to both intergranular and intragranular phase formation. The concept of one-dimensional (1-D) commensuration of phases through plane edge-to-edge/row matching is an interesting extension of the classic ideas of coherency and bicrystallography and potentially important in characterizing the behavior of certain types of boundaries. However, the general importance of these geometrical relations in real and reciprocal space will depend on the depth of the energy wells in orientation space associated with these special boundaries. This article is based on a presentation made in the “Hume-Rothery Symposium on Structure and Diffusional Growth Mechanisms of Irrational Interphase Boundaries,” which occurred during the TMS Winter meeting, March 15–17, 2004, in Charlotte, NC, under the auspices of the TMS Alloy Phases Committee and the co-sponsorship of the TMS-ASM Phase Transformations Committee.     

Calculation of the standard heat capacities of crystalline oxides in the Fe-O-Ti system

Our earlier experimental studies of the solid-phase reduction of disseminated lump ores demonstrate that an oxide lattice transforms into a metal lattice via the saturation of the oxide crystal lattice by charged oxygen vacancies. Low-charge metal cations appear in the oxide crystal lattice, and they are related to oxygen vacancies by the condition of local electrical neutrality. As oxygen vacancies are accumulated (i.e., during reduction), the number of oxygen vacancy-low charge cation complexes in the initial oxide increases. The total composition of the oxide phase in the range of a crystal lattice of a certain type changes continuously from the initial oxide to the end product of reduction, i.e., to the lower oxide or a metal. Therefore, it is necessary to determine the thermal characteristics of not only all possible stoichiometric compounds in the M-O system but also MO_x oxides of variable compositions. Equations for calculating the standard heat capacities of complex stoichiometric oxides and oxides of variable compositions in the Fe-O-Ti system are derived using a mathematical model developed earlier, and these characteristics are calculated.     

Low temperature and strain rate dependence of fracture stress and fracture toughness on thin Fe40Ni40B20 amorphous ribbon

The fracture stress and the critical stress intensity factor of the Fe₄₀Ni₄₀B₂₀ amorphous metallic ribbons 20 μm thick were measured in the temperature range 4.2–300 K and at deformation rates from 3.3×10⁻⁶ to 1.25×10⁻³ m⁻¹ with the aim to obtain more information on the condition for the onset and development of the inhomogeneous plastic deformation and fracture.     

Investigations of high-performance GaAs solar cells grown on Ge-Si/sub 1-x/Ge/sub x/-Si substrates

High-performance p/sup +//n GaAs solar cells were grown and processed on compositionally graded Ge-Si/sub 1-x/Ge/sub x/-Si (SiGe) substrates. Total area efficiencies of 18.1% under the AM1.5-G spectrum were measured for 0.0444 cm/sup 2/ solar cells. This high efficiency is attributed to the very high open-circuit voltages (980 mV (AM0) and 973 mV (AM1.5-G)) that were achieved by the reduction in threading dislocation density enabled by the SiGe buffers, and thus reduced carrier recombination losses. This is the highest independently confirmed efficiency and open-circuit voltage for a GaAs solar cell grown on a Si-based substrate to date. Larger area solar cells were also studied in order to examine the impact of device area on GaAs-on-SiGe solar cell performance; we found that an increase in device area from 0.36 to 4.0 cm/sup 2/ did not degrade the measured performance characteristics for cells processed on identical substrates. Moreover, the device performance uniformity for large area heteroepitaxial cells is consistent with that of homoepitaxial cells; thus, device growth and processing on SiGe substrates did not introduce added performance variations. These results demonstrate that using SiGe interlayers to produce "virtual" Ge substrates may provide a robust method for scaleable integration of high performance III-V photovoltaics devices with large area Si wafers.     

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

This paper uses X-ray absorption spectroscopy to study the electronic structure of the high-k gate dielectrics including TM and RE oxides. The results are applicable to TM and rare earth (RE) silicate and aluminate alloys, as well as complex oxides comprised of mixed TM/TM and TM/RE oxides. These studies identify the nature of the lowest conduction band d^* states, which define the optical band gap, E_g, and the conduction band offset energy with respect to crystalline Si, E_B. E_g and E_B scale with the atomic properties of the TM and RE atoms providing important insights for identification high-k dielectrics that meet performance targets for advanced CMOS devices.     

Replication and bonding techniques for integrated microfluidic systems

From the technical and economic points of view, systems integration, and packaging represent a crucial step in the production of microsystems. Compared to purely silicon- or glass-based systems, the variety of materials and geometries available for purely polymer microfluidic systems is much larger, due to the outstanding material properties. Moreover, polymers may be shaped and joined by comparably simple methods. Examples are polymer microreplication as well as various bonding methods. With them, complete polymer microsystems can be integrated. In addition, a number of established, compatible processes are available for the integration of functional elements that may also be made of other materials.