Broad-band wavelength conversion based on cross-gain modulation and four-wave mixing in InAs-InP quantum-dash semiconductor optical amplifiers operating at 1550 nm

Wavelength conversion based on four-wave mixing (FWM) and cross-gain modulation (XGM) is experimentally demonstrated for the first time in a 1550-nm InAs-InP quantum-dash semiconductor optical amplifier. Continuous-wave FWM with a symmetric conversion efficiency dependence on detuning direction and FWM mediated short-pulse wavelength conversion are demonstrated. Using XGM, we have successfully implemented short-pulse wavelength conversion over 10 THz and error-free data conversion of a 2.5-Gb/s data sequence over 7.5 THz. The pulsed XGM experiments suggest that adjacent regions within an inhomogeneously broadened gain spectrum are partially coupled which increases the operational bandwidth, but at the expense of speed.     

Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature

ABSTRACT: The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400 [DEGREE SIGN]C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy exhibits sharp excitonic emissions with lifetimes ranging from 0.7 to 1.1 ns. The coherence properties of the emitted photons are investigated by measuring the first-order field correlation function.     

Modal Analysis of Large Spot Size, Low Output Beam Divergence Quantum-Dot Lasers

Large spot size ridge waveguide lasers utilizing a low modal gain single quantum dot layer emitting at 925 nm were designed and fabricated. Ridge waveguides with width <3 mum emit in a single transverse mode with a low transverse full-width at half-maximum divergence of 20deg. Wider ridges initially lase in the first-order transverse mode before collapsing to the fundamental mode. This characteristic is explained by a thermally induced increase in the refractive index of the waveguide core. All lasers operate in a single lateral mode     

Ultra-compact high transmittance photonic wire bends for monolithic integration on III/V-semiconductors

Using deeply etched photonic wires on gallium arsenide, ultra-small bent waveguides with radii of curvature below 1 mum were fabricated. The maximum transmittance of a 90deg bend with radius of 2 mum can be enhanced to almost 99% at a wavelength of 1.55 mum, which corresponds to an attenuation factor of 0.05 dB per bend     

High-performance 980 nm quantum dot lasers for high-powerapplications

High-performance quantum dot lasers emitting at 980 nm with output powers of up to 4 W CW from a single facet (AR/HR coating, 100 μm stripe width) have been fabricated. Wall-plug efficiencies >50%, were achieved at room temperature. Owing to an improved carrier confinement output powers as high as 1 W CW can be obtained from the fundamental dot transition even at temperatures as high as 110°C     

Enhanced direct-modulated bandwidth of 37 GHz by a multi-section laser with a coupled-cavity-injection-grating design

Using a new multi-section laser concept based on a coupled-cavity-injection-grating design, the material related intrinsic 3 dB modulation bandwidth can be enhanced up to 37 GHz for a 1.5 mm long device.     

Gain, index variation, and linewidth-enhancement factor in 980-nm quantum-well and quantum-dot lasers

An experimental comparative study of the gain, index variation, and linewidth enhancement factor in 980-nm quantum-well (QW) and quantum-dot (QD) lasers structures, designed for high power applications, is presented. The gain spectra of the QW lasers at high injection level revealed three different transition energies, with a low linewidth enhancement factor (/spl sim/1.2) for E2HH2 transitions. Similar values for the linewidth enhancement factor, ranging between 2.5 and 4.5, were found for QW and QD devices, when comparing at similar values of the peak gain. This result is attributed to the contribution of excited state transitions in the measured QD lasers.     

High throughput projection UV lithography of high-aspect-ratio thick SU-8 microstructures

This paper presents a method and an ultra-violet (UV) lithography system to fabricate high-aspect-ratio microstructures (HARMS) with good sidewall quality and nice dimension control to meet the requirement for industrial high throughput and high yield production of micro devices. The advantages, equipment, working principle of UV projection scanning exposure, and scanning exposure strategies are introduced first. Following the numerical simulation for the UV projection scanning exposure of thick SU-8 photoresist, experiment results are demonstrated for different exposure strategies. With Continually Changing Focus Projection Scanning (CCFPS), SU-8 microstructures with 860 μm high and 15 μm feature size are demonstrated. For microstructure with 866 μm height, 20 μm width, from the top layer to the bottom layer, the dimension can be controlled in the range of +0.7 to ?1.7 μm; also, the vertical sidewall angle can be controlled inside 90 ± 0.16°. It approves that the CCFPS exposure for HARMS can achieve much straighter and more vertical sidewall compared with UV contact print or UV projection exposure with focusing image on the resist surface or an optimized depth.