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61.
Yong Xia Rongming Lin 《International journal for numerical methods in engineering》2004,59(1):153-172
Order reduction is a computationally efficient method to estimate some lowest eigenvalues and the corresponding eigenvectors of large structural systems by reducing the order of the original model to a smaller one. But its accuracy is limited to a small range of frequencies that depends on the selection of the retained degrees of freedom. This paper proposes a new iterative order reduction (IOR) technique to obtain accurately the eigensolutions of large structural systems. The technique retains all the inertia terms associated with the removed degrees of freedom. This hence leads to the reduced mass matrix being in an iterated form and the reduced stiffness matrix constant. From these mass and stiffness matrices, the eigensolutions of the reduced system can be obtained iteratively. On convergence the reduced system reproduces the eigensolutions of the original structure. A proof of the convergence property is also presented. Applications of the method to a practical GARTEUR structure as well as a plate have demonstrated that the proposed method is comparable to the commonly used Subspace Iteration method in terms of numerical accuracy. Moreover, it has been found that the proposed method is computationally more efficient than the Subspace Iteration method. Copyright © 2003 John Wiley & Sons, Ltd. 相似文献
62.
研究了某种环氧树脂阻尼灌封胶在热氧老化的作用下分子结构、硬度、断面形貌以及动态力学性能随时间的变化.傅立叶红外光谱图表明,所制备的样品环氧基团反应比较完全,热氧老化后试样表面由仲胺和环氧基团形成的酯键发生了部分断裂和氧化;邵氏硬度的增加、瓦向高温区移动则表明在老化过程中复杂的固化反应仍然继续进行;最大损耗因子(tanδmax)波动较小表明试样老化后分子结构几乎保持不变;SEM图片显示试样的冲击断裂由老化前的韧性转变为老化后的脆性断裂. 相似文献
63.
Sosnowchik B.D. Azevedo R.G. Cao A. Lin L. Pisano A.P. 《Advanced Packaging, IEEE Transactions on》2005,28(4):626-634
This paper presents the rapid, low-temperature bonding between silicon and steel using the rapid thermal annealing process. Three different thin-film adhesion layer systems including silver, gold, and nickel were utilized as the intermediate bonding material to assist the eutectic Pb/Sn bonding between silicon and steel. The bonding temperature was set at 220/spl deg/C for 20 s, with a 20-s ramp-up time. Five experiments were conducted to determine the strength of the bond, including static tensile and compressive four-point bend tests, axial extension tests, tensile bending fatigue tests, and corrosion resistance tests. The test results have shown that the gold adhesion layer is the most robust, demonstrating minimal creep during fatigue tests, no delamination during the tensile or compressive four-point bend tests, and acceptable strength during the axial extension tests. Additionally, all adhesion layers have withstood four months of submersion in various high-temperature solutions and lubricants without failure. Simulations of the axial stresses and strains that developed during the four-point bend and axial extension tests were performed and showed that the presence of the silicon die provides a local reinforcement of the bond as observed in the experimental tests. 相似文献
64.
Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall 总被引:1,自引:0,他引:1
Chia-Feng Lin Zhong-Jie Yang Jing-Hui Zheng Jing-Jie Dai 《Photonics Technology Letters, IEEE》2005,17(10):2038-2040
In this letter, we will report on a nitride-based light emitting diode with a mesa sidewall roughening process that increases light output power. The fabricated GaN-based light-emitting diode (LED) wafers were first treated through a photoelectrochemical (PEC) process. The Ga/sub 2/O/sub 3/ layers then formed around the GaN : Si n-type mesa sidewalls and the bottoms mesa etching regions. Selective wet oxidation occurred at the mesa sidewall between the p- and the n-type GaN interface. The light output power of the PEC treated LED was seen to increase by about 82% which was caused by a reduced index reflectance of GaN-Ga/sub 2/O/sub 3/-air layers, by a rough Ga/sub 2/O/sub 3/ surface, by a microroughening of the GaN sidewall surface, and by a selective oxidation step profile of the mesa sidewall that increases the light-extraction efficiency from the mesa sidewall direction. Consequently, this wet PEC treated process is suitable for high powered nitride-based LEDs lighting applications. 相似文献
65.
Tsang T.K.K. Kuan-Yu Lin El-Gamal M.N. 《Circuits and Systems II: Express Briefs, IEEE Transactions on》2008,55(3):214-218
This paper presents design techniques of CMOS ultra-wide-band (UWB) amplifiers for multistandard communications. The goal of this paper is to propose a compact, simple, and robust topology for UWB low-noise amplifiers, which yet consumes a relatively low power. To achieve this goal, a common-gate amplifier topology with a local feedback is employed. The first amplifier uses a simple inductive peaking technique for bandwidth extension, while the second design utilizes a two-stage approach with an added gain control feature. Both amplifiers achieve a flat bandwidth of more than 6 GHz and a gain of higher than 10 dB with supply voltages of 1.8-2.5 V. Designs with different metal thicknesses are compared. The advantage of using thick-metal inductors in UWB applications depends on the chosen topology. 相似文献
66.
67.
Lei Liu Ying Kong Hong Xu Jin P. Li Jin X. Dong Zhi Lin 《Microporous and mesoporous materials》2008,115(3):624-628
A three-dimensional zinc phosphate compound with DFT topology, designated as ZnPO4-EU1, has been synthesized by an ionothermal approach from the system HF-ZnO–P2O5-choline chloride-imidazolidone. Ethylenediamine, derived from decomposition of the imidazolidone component of the deep-eutectic solvent (DES) itself, is delivered to the synthesis and serves as an appropriate template for ZnPO4-EU1. Experiments in which the synthesis conditions were varied showed that ZnPO4-EU1 may be prepared over a wide molar ratio of P/Zn = 0.55–13.0. Powder X-ray diffraction patterns have been obtained at intervals to track the crystallization process of this material. The experimental data show that Zn3(PO4)2 · 4H2O (a dense phase) was first isolated from the DES after reaction for 1 h. Subsequently, the pure phase of ZnPO4-EU1 was obtained with increasing crystallization time from 12 h to 72 h. The experimental results show that the nucleation and crystallization take place with relatively low levels of solvent degradation, demonstrating that zinc phosphate with a three-dimensional framework can be synthesized by in situ generation of an appropriate template using an unstable DES at high temperatures (150–200 °C). 相似文献
68.
69.
均匀设计法分析制备过程对钴钼硫化物催化剂机械强度的影响 总被引:1,自引:1,他引:0
建立了CoMoP/Al2O3加氢精制催化剂机械强度及其可靠性在制备过程中的数学模型,采用均匀设计考察了浸渍、干燥、煅烧、硫化4个制备过程中,浸渍时间、干燥温度、干燥时间、煅烧温度、煅烧时间、硫化温度和硫化升温速率7个实验因子对催化剂强度均值、Weibull模量的影响,同时考察了这些因素对颗粒密度的影响。方差分析表明所有模型都是充足的。实验结果表明,硫化过程是影响催化剂强度均值的主要过程。在实验范围内提高硫化温度、降低硫化时的升温速率有利于提高催化剂的强度。影响催化剂Weibull模量的因素主要为各个制备过程的交互效应。要提高催化剂强度的可靠性就必须全面考虑催化剂制备的各个过程,特别是各个制备过程的交互效应。 相似文献
70.
说明了在异步串行通信(RS-232)的工作方式下,对所接收的数据进行接收、处理,丢弃乱码,并进行保存的可靠方法,并给出了相关的VC 语言程序. 相似文献