Self-healing algorithm for logical mesh connection on ring networks

A self-healing algorithm is proposed for a ring network connected as a logical mesh. It offers good performance in terms of protection line capacity, restoration time, and survivability against multiple failures     

A load dispatch method using fractional programming and semidefinite programming

This paper describes a load dispatch method which minimizes power cost—[fuel cost]/[electric output]—for a power system with thermal plants and energy storage facilities. The proposed method employs fractional programming to convert a minimization problem with fractional objective function to a series of quadratic minimization problems, and semidefinite programming to solve converted problems. The method provides the optimum time‐dependent power output/input and storage level of energy storage facilities as well as time‐dependent power output of thermal plants. The method has been applied to a power system with five thermal plants, two energy storage facilities of various performances, and five load demands. The optimum load scheme of four time mesh points is obtained for the thermal plants and energy storage facilities. The fractional programming successfully converges the optimal scheme through a few iterations. The semidefinite programming deals with a variable matrix of 164 dimensions, and 185 inequality constraints. © 2001 Scripta Technica, Electr Eng Jpn, 138(2): 49–58, 2002     

HPLC Elution Behavior of La-Fullerenes Investigated by Radiochemical Method

HPLC elution behaviors of La-fullerenes were investigated by use of the radiochemical methods. Elution curves of La-fullerenes could be observed in detail for the first time, and the persistent presence of La in the whole elution curve was demonstrated. Production of La-fullerenes containing a radioactive ¹⁴⁰La could be achieved for the first time.     

A semi-static complementary gain cell technology for sub-1 V supplyDRAM's

A new semi-static complementary gain cell for future low power DRAM's has been proposed and experimentally demonstrated. This gain cell consists of a write-transistor and its opposite conduction type read-transistor with a heating gate as a storage node which causes a shift in the threshold voltage. This gain cell provides a two orders of magnitude larger cell signal output and higher immunity to noise on the bitlines when compared with a conventional one-transistor DRAM cell without increasing the storage capacitance even at a supply voltage of 0.8 V. The 0.87 μm² cell size is achieved by using a 0.25 μm design rule with a polysilicon thin-film transistor built in the trench and phase shifted i-line lithography     

Metallized ultra-shallow-junction device technology for sub-0.1μm gate MOSFET's

This paper describes a new ultra-thin SOI-CMOS structure offering reduced parasitic diffusion-layer resistance. It addresses ways to deal with the ultra-shallow junctions required by sub-0.1 μm MOSFET's. Based on a CVD tungsten process we experimentally investigate the characteristics of selectively grown tungsten used in the source and drain region made in SOI layers of various thicknesses ranging from 10 to 100 nm. We also investigate certain CMOS device characteristics. The SOI-CMOS structure, with low parasitic diffusion-layer resistance and good contact characteristics for ultra-shallow junction devices exhibits superior device performance and high scalability     

Implicit integration and consistent tangent modulus of a time‐dependent non‐unified constitutive model

This paper describes the implicit integration and consistent tangent modulus of an inelastic constitutive model with transient and steady strain rates, both of which are time‐ and temperature‐dependent; the transient rate is influenced by the evolution of back stress decomposed into parts, while the steady rate depends only on applied stress and temperature. Such a non‐unified model is useful for high‐temperature structural analysis and is practical owing to the ease in determining material constants. The implicit integration is shown to result in two scalar‐valued coupled equations, and the consistent tangent modulus is derived in a quite versatile form by introducing a set of fourth‐rank constitutive parameters into the discretized evolution rule of back stress. The constitutive model is, then, implemented in a finite element program and applied to a lead‐free solder joint analysis. It is demonstrated that the implicit integration is very accurate if the multilinear kinematic hardening model of Ohno and Wang is employed, and that the consistent tangent modulus certainly affords quadratic convergence to the Newton–Raphson iteration in solving nodal force equilibrium equations. Copyright © 2003 John Wiley & Sons, Ltd.     

TRVs and fault clearing stresses in extra-high-voltage radial networks

To cope with the high rate of increase of power demand in the main industrialized districts in Japan, 550-kV transmission systems covering the districts have been reinforced, with most of the main power plants connected directly to these systems. Through 550-/300-kV substations, the majority of power to the districts is supplied by 300-kV systems. To limit the excess short-circuit capacity in the 300-kV systems, they tend to be reconstructed as so-called radial networks. In radial networks with high short-circuit capacity and relatively small number of transmission lines connected to the substation busbars, the rate of rise of TRV can be far higher than standard value. This paper analyzes the transient recovery voltages (TRV) in such extra-high-voltage radial networks in Japan, together with the relevant stresses to circuit-breakers during fault clearings. Future system conditions have also been introduced. As the typical rate of rise of the TRV values, more than twice that of today's standard ones are probable.