Highly Stretchable and Sensitive Strain Sensors Using Fragmentized Graphene Foam

Stretchable electronics have recently been extensively investigated for the development of highly advanced human‐interactive devices. Here, a highly stretchable and sensitive strain sensor is fabricated based on the composite of fragmentized graphene foam (FGF) and polydimethylsiloxane (PDMS). A graphene foam (GF) is disintegrated into 200–300 μm sized fragments while maintaining its 3D structure by using a vortex mixer, forming a percolation network of the FGFs. The strain sensor shows high sensitivity with a gauge factor of 15 to 29, which is much higher compared to the GF/PDMS strain sensor with a gauge factor of 2.2. It is attributed to the great change in the contact resistance between FGFs over the large contact area, when stretched. In addition to the high sensitivity, the FGF/PDMS strain sensor exhibits high stretchability over 70% and high durability over 10 000 stretching‐releasing cycles. When the sensor is attached to the human body, it functions as a health‐monitoring device by detecting various human motions such as the bending of elbows and fingers in addition to the pulse of radial artery. Finally, by using the FGF, PDMS, and μ‐LEDs, a stretchable touch sensor array is fabricated, thus demonstrating its potential application as an artificial skin.     

Holography and plasma oxidation for uniform nanoscale two dimensional channel formation of vertical organic field-effect transistors with suppressed gate leakage current

Vertical organic field-effect transistors (VOFETs) with nanoscale channel openings have been fabricated using pentacene as an active layer material. To achieve uniform nanoscale two-dimensional channel openings, a laser holography lithography has been introduced. Uniformly distributed and well-aligned holes with 250 nm diameter were successfully obtained with the laser holography lithography. VOFET devices with these channel openings have shown high on/off ratio of about 10³ without any further treatment. Gate leakage current was also decreased with an additional insulating layer generated on the gate electrode sidewall via plasma oxidation.     

Fast Super‐Resolution Algorithm Based on Dictionary Size Reduction Using k‐Means Clustering

This paper proposes a computationally efficient learning‐based super‐resolution algorithm using k‐means clustering. Conventional learning‐based super‐resolution requires a huge dictionary for reliable performance, which brings about a tremendous memory cost as well as a burdensome matching computation. In order to overcome this problem, the proposed algorithm significantly reduces the size of the trained dictionary by properly clustering similar patches at the learning phase. Experimental results show that the proposed algorithm provides superior visual quality to the conventional algorithms, while needing much less computational complexity.     

Stretchable,Transparent Zinc Oxide Thin Film Transistors

Stretchable and transparent thin film transistors (TFTs) with intrisically brittle oxide semiconductors are built using a wavy structural configuration that can provide high flexibility and stretchability. After device fabrication procedures including high temperature annealing, the oxide semiconductor‐based TFT arrays can be transferred directly to plastic or rubber substrates, without an additional device process, using transfer printing methods. This procedure can avoid some of the thermal degradation problems associated with plastic or rubber substrates by separating them from the annealing procedure needed to improve the device performance. These design and fabrication methods offer the possibility of developing a new format of stretchable electronics.     

A novel simplified process for fabricating a very high densityp-channel trench gate power MOSFET

A novel simplified fabrication method of a very high density p-channel trench gate power MOSFET using four mask layers and nitride/TEOS sidewall spacers is realized. The proposed process showed improved on-resistance characteristics of the device with increasing cell density and the cost-effective production capability due to the lesser number of processing steps. By using this process technique, a remarkably increased high density (100 Mcell/inch²) trench gate power MOSFET with a cell pitch of 2.5 μm could be effectively realized. The fabricated device had a low specific on-resistance of 1.1 mΩ-cm² with a breakdown voltage of -36 V     

Effect of tap spacing on the performance of direct-sequencespread-spectrum RAKE receiver

The effect of tap spacing on the performance of a RAKE receiver is analyzed analytically in a frequency-selective fading channel. A continuous time multipath fading channel model is used for the analysis, and the expression of the correlation between the desired signals, interference signals, and noise signals at the output of each branch of the RAKE receiver is derived for various chip waveforms. Since the noise components of each branch signal are correlated to each other, an optimum combining rule based on the maximum-likelihood criterion is derived to gain utmost performance. It is shown that the performance of the system can be improved by setting the tap spacing of the RARE receiver below the chip duration when the bandwidth of the transmitted signal is larger than the inverse of the chip duration. Also, it is shown that the normalized capacity of the system can be increased by using a chip waveform occupying wider bandwidth, which takes advantage of the increased diversity gain merits of a wide-band code-division multiple-access system at the same chip rate. It is noted that the derived combining rule gives diversity gain against the fading process as well as noise whitening processing gain against multiple-access interference at the same time     

Improvement of kink and beam steering characteristics of 0.98-μmGaInAs-GaInP high-power lasers utilizing channel ion implantation

We demonstrate a kink and beam steering free operation of 0.98-μm GaInAs-GaInP high-power ridge waveguide (RW) lasers utilizing channel ion implantation. The ion-implanted regions along the both sides of the ridge effectively suppressed the excitation of higher order lateral modes, which causes beam steering and kink. The maximum power without beam steering and kink has been achieved over 250 mW for channel ion-implanted RW lasers with 1.8-3.7-μm ridge width, compared to 120-mW maximum power without the channel ion implantation     

Performance of improved probabilistic location update scheme forcellular mobile networks

This paper suggests an improved probabilistic location update (IPLU) scheme for advanced cellular mobile networks. The location management cost with IPLU is analyzed, and various performance characteristics of IPLU are investigated. It is shown that IPLU has the parameter q that can be used as a control parameter to achieve the best performance when the unit location update cost (U) and the unit paging cost (P) are given. In addition, this paper provides some recommendable values of q in two cases, P>U and P⩽U. As a result, we demonstrate a merit of IPLU, that is, simple implementation with an acceptable performance level, especially, under the future cellular mobile network environments where a vast number of microcells/picocells exist and the relative user mobility is very high     

Hybrid pulse position modulation/ultrashort light pulse code-division multiple-access systems .I. Fundamental analysis

We propose a hybrid pulse position modulation/ultrashort light pulse code-division multiple-access (PPM/ULP-CDMA) system for ultrafast optical communications. The proposed system employs spectral CDMA encoding/decoding and PPM with very short pulse separation. The statistical properties of the encoded ULP are investigated with a general pulse model, and the performance of the proposed PPM/ULP-CDMA system is investigated. It is shown that we can improve upon the performance of other ULP-CDMA systems, such as those using on-off keying, by employing PPM. It is also shown that we can improve the performance of the proposed system by increasing the effective number of chips, by increasing the number of PPM symbols, and by reducing the ULP duration. The performance analysis shows that the aggregate throughput of the proposed PPM/ULP-CDMA system could be over 1 Tb/s.     

Optical BGP Routing Convergence in Lightpath Failure of Optical Internet

Optical Border Gateway Protocol (OBGP) is an extension to BGP for Optical Cross Connects (OXCs) to automatically setup multiple direct optical lightpaths between many different autonomous domains. With OBGP, the routing component of a network may be distributed to the edge of the network while the packet classification and forwarding is done in the core. However, it is necessary to analyze the stable convergence functions of OBGP in case of lightpath failures. In this paper, we first describe the architecture of the OBGP model and analyze the potential problems of OBGP, e.g., virtual BGP router convergence behavior in the presence of lightpath failure. We then propose an OBGP convergence model derived from an inter‐AS (Autonomous System) relationship. The evaluation results show that the proposed model can be used for a stable OBGP routing policy and OBGP routing convergence under lightpath failures of the optical Internet.