移动运营商渠道管理模式及存在问题分析

渠道作为营销体系中的重要一环，对移动运营商的发展起着举足轻重的作用。随着国内移动市场竞争的加剧，营销渠道的竞争将成为移动运营商间竞争的焦点。目前，国内两大移动运营商在渠道管理上存在诸多问题，从而影响了其市场拓展。分析了移动选营商渠道管理存在的三个较为突出的问题，并提出了可行的解决方法，从而为移动运营商的渠道管理工作提供思路。     

Research on the Distant Hybrids of Wheat Obtained via Low-Energy Ion-Beam Implantation

Abstract The whole DNA of soybean was implanted into four varieties of wheat of Zhongyu5, Huaiyin 9628, Wenyou 1, Jimai 5 respectively via ion-beam mediation. There were 5 plantsobtained whose protein content was higher than 18.5%, the highest one was 21.44%. There were 3plants obtained whose protein content was lower than 11.5%, the lowest one was 10.96%. We cansee that the whole DNA of soybean transformed into wheat via ion beam implantation can inducethe increase in wheat protein content dramatically. The result also shows that the transformationefficiency of different gene types of wheat receptor varies greatly that the implanting time has acertain effect on the efficiency of transformation.     

大面积硅锂漂移探测器制备及其性能

制备了大面积硅锂漂移探测器,其性能为:探测器的灵敏面积123.6 cm~2;灵敏层深度2 mm;在室温和300 V反向偏压的工作条件下漏电流小于20 μA;对~(241)Am 5.486 MeV α粒子的能量分辨(FWHM)为77.67 keV。     

THE ANALYSIS OF THE SEPARATED LAYERS ALGORITHM BY DOMAIN DECOMPOSITION METHOD

From the principle of of the Domain Decomposition Method (DDM), we analyse the 2nd-order linear elliptic partial differential problems and link the Separated-Layers Algorithm (SLA) with DDM. The mathematical properties of SLA and numerical example are presented to obtain satisfactory computation results. For general linear differential ones, also are the structure of SLA and its characteristics discussed.     

提高E^2PROM中NMOS管源漏穿通电压的实验研究

为了提高Ｅ＾２ＰＲＯＭ中Ｎ管源漏穿通电压，用实验的方法对制造工艺进行了研究。结果表明，高能量注入是提高ＶＰＴ的有效手段，但受到ｐｎ结击穿的限制，只适用于低区短沟Ｎ管；ＤＤＤ工艺大幅度高ＶＰＴ，但ｐｎ结击穿电压低于２０Ｖ，不能应用于高压ＭＯＳ管；采用适量的防穿通注入和适当增大沟道长度为最理想的工艺途径。     

卤化银探测器及其某些特性

文中简述了卤化银(主要是溴化银)单晶片的某些特性,氯化银单晶片与此大致相似。作为低温晶体探测器,对~(241)Am-α放射源,分辨率为17%。卤化银晶片是固体电解质,只有Ag离子对输出电信号有贡献,有显著的极化现象。在液氮槽内溴化银晶片的电导率在几个数量级内成为可控的,由在室温下外加偏置电压大小所引起的分解状态下的初始电流决定。     

控制棒钴吸收体的活度分布

应用单组中子微扰理论,对辐照后控制棒钴吸收体内活度分布进行理论分析,得到活度分布计算的解析表达式。对高通量工程试验堆(HFETR)首次出堆的2根控制棒钴吸收体进行数值计算。利用钴靶活度水下测量装置进行这2根钴吸收体活度分布的实验测量。计算与实验测量结果相符。通过理论计算所得到的活度分布可作为辐照后~(60)Co同位素分装依据。本文得到的控制棒相对价值曲线理论计算值与实验测量结果符合良好。